STD7NS20T4

STD7NS20 STD7NS20-1 N-CHANNEL 200V - 0.35Ω - 7A DPAK / IPAK MESH OVERLAY™ MOSFET PRELIMINARY DATA TYPE STD7NS20 STD7NS20-1 ■ ■ ■ ■ ■ VDSS RDS(on) ID 200 V 200 V < 0.40 Ω < 0.40 Ω 7A 7A TYPICAL RDS(on) = 0.35 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for lighting applications. 3 3 2 1 1 DPAK TO-252 IPAK TO-251 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITH MODE POWER SUPPLIES (SMPS) ■ DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT ■ ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Parameter Drain-source Voltage (VGS = 0) Value Unit 200 V Drain-gate Voltage (RGS = 20 kΩ) 200 V Gate- source Voltage ± 20 V ID Drain Current (continuos) at TC = 25°C 7 A ID Drain Current (continuos) at TC = 100°C 4.4 A IDM (
) PTOT Drain Current (pulsed) 28 A Total Dissipation at TC = 25°C 45 W 0.37 W/°C Derating Factor dv/dt (1) Tstg Tj Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature (•)Pulse width limited by safe operating area June 2003 5 V/ns –65 to 150 °C 150 °C (1) ISD≤ 7A, di/dt≤300 A/µs, VDD≤ V(BR)DSS, Tj≤TjMAX 1/8 STD7NS20 / STD7NS20-1 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 2.7 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W Maximum Lead Temperature For Soldering Purpose 275 °C Tl AVALANCHE CHARACTERISTICS Symbol Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Parameter 7 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 60 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating Gate-body Leakage Current (VDS = 0) VGS = ±20V Min. Typ. Max. 200 Unit V VDS = Max Rating, TC = 125 °C 1 µA 10 µA ±100 nA ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 3.5 A Min. Typ. Max. Unit 2 3 4 V 0.35 0.40 Ω Typ. Max. Unit DYNAMIC Symbol gfs (1) 2/8 Parameter Forward Transconductance Test Conditions VDS > ID(on) x RDS(on)max, ID = 3.5 A VDS = 25V, f = 1 MHz, VGS = 0 Min. 4 S Ciss Input Capacitance 540 pF Coss Output Capacitance 90 pF Crss Reverse Transfer Capacitance 35 pF STD7NS20 / STD7NS20-1 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Conditions Min. VDD = 100 V, ID = 3.5 A RG = 4.7Ω VGS = 10 V (see test circuit, Figure 3) VDD = 160V, ID = 18 A, VGS = 10V Typ. Max. Unit 10 ns 15 ns 31 45 nC 7.5 nC 9 nC SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Min. Vclamp = 160 V, ID = 7 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Typ. Max. 12 12 25 Unit ns ns ns SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Min. Typ. Max. Unit Source-drain Current 7 A ISDM (2) Source-drain Current (pulsed) 28 A VSD (1) Forward On Voltage ISD = 7 A, VGS = 0 1.5 V trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 7 A, di/dt = 100A/µs VDD = 50V, Tj = 150°C (see test circuit, Figure 5) IRRM Reverse Recovery Current 170 ns 0.95 µC 11 A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3/8 STD7NS20 / STD7NS20-1 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/8 STD7NS20 / STD7NS20-1 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 0.8 0.031 L4 0.60 1.00 0.024 0.039 V2 0o 8o 0o 0o P032P_B 5/8 STD7NS20 / STD7NS20-1 TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. 2.4 0.086 MAX. 0.094 0.043 A 2.2 A1 0.9 1.1 0.035 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 B5 0.033 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 L2 0.8 0.047 1 0.031 0.039 A1 C2 A3 A C H B B3 = 1 = 2 G = = = E B2 = 3 B5 L D B6 L2 L1 0068771-E 6/8 STD7NS20 / STD7NS20-1 DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A DIM. mm inch MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 12.1 0.476 B1 1.6 MIN. D 1.5 1.5 E 1.65 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 B 1.5 C 12.8 D 20.2 G 16.4 N 50 2.55 2.75 0.100 0.108 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 16.3 1.574 0.618 40 0.059 13.2 0.504 0.520 0.795 18.4 0.645 0.724 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 0.059 0.063 K0 15.7 MAX. 12.992 0.059 P0 R MIN. MAX. D1 W MAX. 330 T TAPE MECHANICAL DATA inch 0.641 * on sales type 7/8 STD7NS20 / STD7NS20-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 8/8