STF4N52K3

STD4N52K3, STP4N52K3, STU4N52K3 Datasheet N-channel 525 V, 2.1 Ω typ., 2.5 A MDmesh™ K3 Power MOSFETs in DPAK, TO-220 and IPAK packages TAB Features TAB Order code 3 DPAK 1 TAB IPAK TO-220 12 1 2 VDS RDS(on)max. STD4N52K3 3 STP4N52K3 525 V 2.6 Ω STU4N52K3 3 • • • • • D(2, TAB) G(1) ID Package 2.5 A DPAK 2.5 A TO-220 2.5 A IPAK 100% avalanche tested Extremely high dv/dt capability Very low intrinsic capacitance Improved diode reverse recovery characteristics Zener-protected Applications • S(3) Switching applications AM01475V1 Description Product status link These MDmesh™ K3 Power MOSFETs are the result of improvements applied to STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. STD4N52K3 STP4N52K3 STU4N52K3 DS7026 - Rev 3 - August 2018 For further information contact your local STMicroelectronics sales office. www.st.com STD4N52K3, STP4N52K3, STU4N52K3 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 525 V VGS Gate-source voltage ±30 V Drain current (continuous) at TC = 25 °C 2.5 A Drain current (continuous) at TC = 100 °C 2 A Drain current (pulsed) 10 A Total dissipation at TC = 25 °C 45 W Peak diode recovery voltage slope 12 V/ns -55 to 150 °C ID ID IDM (1) PTOT dv/dt (2) Tj Operating junction temperature range Tstg Storage temperature range 1. Pulse width limited by safe operating area. 2. ISD ≤ 2.5 A, di/dt ≤ 400 A/μs, VDSpeak ≤ V(BR)DSS, VDD = 80% V(BR)DSS. Table 2. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient Rthj-pcb (1) Thermal resistance junction-pcb Value DPAK TO-220 2.78 62.5 50 IPAK Unit 2.78 °C/W 100 °C/W °C/W 1. When mounted on 1inch² FR-4 board, 2 oz Cu. Table 3. Avalanche characteristics Symbol IAR(1) (2) EAS Parameter Value Unit Avalanche current, repetitive or not-repetitive 1.3 A Single pulse avalanche energy 110 mJ 1. Pulse width limited by Tj max. 2. Starting Tj = 25 °C, ID = IAR, VDD = 50 V. DS7026 - Rev 3 page 2/27 STD4N52K3, STP4N52K3, STU4N52K3 Electrical characteristics 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. On/off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions Min. ID = 1 mA, VGS = 0 V Typ. 525 Zero gate voltage drain current IGSS Gate body leakage current VDS = 0 V, VGS = ±20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 50 µA RDS(on) Static drain-source on resistance VGS = 10 V, ID = 1.25 A VGS = 0 V, VDS = 525 V, TC = 125 °C 1 µA 50 µA ±10 µA 3.75 4.5 V 2.1 2.6 Ω Typ. Max. Unit - pF (1) 3 Unit V VGS = 0 V, VDS = 525 V IDSS Max. 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Parameter Test conditions Min. Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq. (1) Equivalent output capacitance VDS = 0 to 420 V, VGS = 0 V - 20 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 4 - Ω Qg Total gate charge Qgs Gate-source charge - nC Qgd Gate-drain charge 334 VDS = 100 V, f = 1 MHz, VGS = 0 V - 28 5 VDD = 420 V, ID = 2.5 A, VGS = 0 to 10 V (see Figure 16. Test circuit for gate charge behavior) 11 - 2 7 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 420 V. Table 6. Switching times Symbol td(on) tr td(off) tf DS7026 - Rev 3 Parameter Test conditions Turn-on delay time VDD = 260 V, ID = 1.25 A, Rise time RG = 4.7 Ω, VGS = 10 V Turn-off delay time (see Figure 15. Test circuit for resistive load switching times and Figure 20. Switching time waveform) Fall time Min. Typ. Max. Unit - ns 8 - 7 21 14 page 3/27 STD4N52K3, STP4N52K3, STU4N52K3 Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions ISD Source-drain current ISDM (1) Source-drain current (pulsed) VSD (2) Forward on voltage ISD = 2.5 A, VGS = 0 V trr Reverse recovery time ISD = 2.5 A, di/dt = 100 A/µs Qrr Reverse recovery charge IRRM Reverse recovery current VDD = 60 V (see Figure 17. Test circuit for inductive load switching and diode recovery times) trr Reverse recovery time ISD = 2.5 A, di/dt = 100 A/µs Qrr Reverse recovery charge IRRM Reverse recovery current VDD = 60 V, Tj = 150 °C (see Figure 17. Test circuit for inductive load switching and diode recovery times) Min. Typ. Max. Unit 2.5 - 10 - - - 1.6 A V 173 ns 778 nC 9 A 196 ns 941 nC 10 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%. Table 8. Gate-source Zener diode Symbol V(BR)GSO Parameter Gate-source breakdown voltage Test conditions IGS = ±1 mA, ID = 0 A Min. Typ. Max. Unit 30 - - V The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry. DS7026 - Rev 3 page 4/27 STD4N52K3, STP4N52K3, STU4N52K3 Electrical characteristics curves 2.1 Electrical characteristics curves Figure 1. Safe operating area for DPAK/IPAK Figure 2. Thermal impedance for DPAK/IPAK AM08639v1 ID (A) Tj=150°C Tc=25°C S ingle puls e 10 ) 100µs D S( 1 on O Li p e r m at ite io d ni by n m th is ax a R re a is 10µs 0.1 0.01 0.1 1ms 10ms 10 1 VDS (V) 100 Figure 3. Safe operating area for TO-220 Figure 4. Thermal impedance for TO-220 AM08637v1 ID (A) Tj=150°C Tc=25°C S ingle puls e 10 ) D S( 1 on O Li p e r m at ite io d ni by n m th is ax a R re a is 10µs 100µs 0.1 0.01 0.1 1ms 10ms 10 1 VDS (V) 100 Figure 5. Output characterisics AM08640v1 ID (A) 6 AM08641v1 ID (A) VGS =15V 4.5 VGS =10V 7V 5 4.0 3.5 3.0 4 2.5 6V 3 2.0 1.5 2 1.0 1 0.5 5V 0 Figure 6. Transfer characteristics 0 DS7026 - Rev 3 5 10 15 20 25 VDS (V) 0 0 1 2 3 4 5 6 7 8 9 VGS (V) page 5/27 STD4N52K3, STP4N52K3, STU4N52K3 Electrical characteristics curves Figure 7. Normalized V(BR)DSS vs temperature V(BR)DSS AM08648v1 Figure 8. Static drain-source on-resistance (norm) R DS (on) (Ω) 1.10 2.35 1.05 2.25 1.00 2.15 0.95 2.05 0.90 1.95 0.85 1.85 0.80 -75 -25 25 75 TJ (°C) 125 1.75 VGS =10V AM08642v1 VDD=420V ID =2.5A 12 VDS VDS (V) 1.0 0.5 0 Figure 9. Gate charge vs gate-source voltage VGS (V) AM08643v1 1.5 2.0 2.5 Figure 10. Capacitance variations AM00893v1 C (pF) 400 Cis s 350 10 300 8 250 6 200 150 4 100 Cos s 10 100 2 0 ID(A) Crs s 50 0 2 4 6 8 10 12 0 Q g (nC) Figure 11. Normalized gate threshold voltage vs temperature AM08646v1 VGS (th) (norm) 1 0.1 1 100 10 VDS (V) Figure 12. Normalized on-resistance vs temperature AM08647v1 R DS (on) (norm) 2.5 1.1 ID = 50 μΑ VGS = 10 V 1.0 2.0 0.9 1.5 0.8 1.0 0.7 0.5 0.6 0.5 -75 DS7026 - Rev 3 -25 25 75 125 TJ (°C) 0 -75 -25 25 75 125 TJ (°C) page 6/27 STD4N52K3, STP4N52K3, STU4N52K3 Electrical characteristics curves Figure 13. Source-drain diode forward characteristics AM08649v1 VS D (V) 1.0 Figure 14. Maximum avalanche energy vs temperature AM08650v1 E AS (mJ ) 120 ID=1.3 A V DD=50 V TJ =-50°C 100 0.9 80 0.8 TJ =25°C 60 0.7 40 0.6 TJ =150°C 20 0.5 0.4 0 DS7026 - Rev 3 0.5 1 1.5 2 2.5 IS D(A) 0 0 20 40 60 80 100 120 140 TJ (°C) page 7/27 STD4N52K3, STP4N52K3, STU4N52K3 Test circuits 3 Test circuits Figure 15. Test circuit for resistive load switching times Figure 16. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 17. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A L A B B 3.3 µF D G + VD 100 µH fast diode B Figure 18. Unclamped inductive load test circuit RG 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi _ pulse width AM01471v1 AM01470v1 Figure 20. Switching time waveform Figure 19. Unclamped inductive waveform ton V(BR)DSS td(on) VD toff td(off) tr tf 90% 90% IDM VDD 10% 0 ID VDD AM01472v1 VGS 0 VDS 10% 90% 10% AM01473v1 DS7026 - Rev 3 page 8/27 STD4N52K3, STP4N52K3, STU4N52K3 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DS7026 - Rev 3 page 9/27 STD4N52K3, STP4N52K3, STU4N52K3 DPAK (TO-252) type A package information 4.1 DPAK (TO-252) type A package information Figure 21. DPAK (TO-252) type A package outline 0068772_A_25 DS7026 - Rev 3 page 10/27 STD4N52K3, STP4N52K3, STU4N52K3 DPAK (TO-252) type A package information Table 9. DPAK (TO-252) type A mechanical data Dim. mm Min. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 E 6.40 E1 4.60 4.70 4.80 e 2.159 2.286 2.413 e1 4.445 4.572 4.699 H 9.35 10.10 L 1.00 1.50 (L1) 2.60 2.80 3.00 L2 0.65 0.80 0.95 L4 0.60 R V2 DS7026 - Rev 3 Typ. 5.10 5.25 6.60 1.00 0.20 0° 8° page 11/27 STD4N52K3, STP4N52K3, STU4N52K3 DPAK (TO-252) type C package information 4.2 DPAK (TO-252) type C package information Figure 22. DPAK (TO-252) type C package outline 0068772_C_25 DS7026 - Rev 3 page 12/27 STD4N52K3, STP4N52K3, STU4N52K3 DPAK (TO-252) type C package information Table 10. DPAK (TO-252) type C mechanical data Dim. mm Min. Typ. Max. A 2.20 2.30 2.38 A1 0.90 1.01 1.10 A2 0.00 0.10 b 0.72 0.85 b4 5.13 c 0.47 0.60 c2 0.47 0.60 D 6.00 D1 5.25 E 6.50 E1 4.70 e 5.46 6.10 6.20 6.60 6.70 2.186 2.286 2.386 H 9.80 10.10 10.40 L 1.40 1.50 1.70 L1 L2 2.90 REF 0.90 L3 L4 1.25 0.51 BSC 0.60 L6 DS7026 - Rev 3 5.33 0.80 1.00 1.80 BSC θ1 5° 7° 9° θ2 5° 7° 9° V2 0° 8° page 13/27 STD4N52K3, STP4N52K3, STU4N52K3 DPAK (TO-252) type E package information 4.3 DPAK (TO-252) type E package information Figure 23. DPAK (TO-252) type E package outline 0068772_type-E_rev.25 DS7026 - Rev 3 page 14/27 STD4N52K3, STP4N52K3, STU4N52K3 DPAK (TO-252) type E package information Table 11. DPAK (TO-252) type E mechanical data Dim. A mm Min. Typ. Max. 2.18 2.39 A2 0.13 b 0.65 0.884 b4 4.95 5.46 c 0.46 0.61 c2 0.46 0.60 D 5.97 6.22 D1 5.21 E 6.35 E1 4.32 6.73 e 2.286 e1 4.572 H 9.94 10.34 L 1.50 1.78 L1 L2 2.74 0.89 L4 1.27 1.02 Figure 24. DPAK (TO-252) recommended footprint (dimensions are in mm) FP_0068772_25 DS7026 - Rev 3 page 15/27 STD4N52K3, STP4N52K3, STU4N52K3 DPAK (TO-252) packing information 4.4 DPAK (TO-252) packing information Figure 25. DPAK (TO-252) tape outline 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 K0 For machine ref. only including draft and radii concentric around B0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 DS7026 - Rev 3 page 16/27 STD4N52K3, STP4N52K3, STU4N52K3 DPAK (TO-252) packing information Figure 26. DPAK (TO-252) reel outline T 40mm min. access hole at slot location B D C N A G measured at hub Tape slot in core for tape start 2.5mm min.width Full radius AM06038v1 Table 12. DPAK (TO-252) tape and reel mechanical data Tape Dim. mm mm Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 DS7026 - Rev 3 Reel Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 18.4 22.4 page 17/27 STD4N52K3, STP4N52K3, STU4N52K3 TO-220 type A package information 4.5 TO-220 type A package information Figure 27. TO-220 type A package outline 0015988_typeA_Rev_21 DS7026 - Rev 3 page 18/27 STD4N52K3, STP4N52K3, STU4N52K3 TO-220 type A package information Table 13. TO-220 type A package mechanical data Dim. mm Min. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 15.75 D1 DS7026 - Rev 3 Typ. 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 page 19/27 STD4N52K3, STP4N52K3, STU4N52K3 IPAK (TO-251) type A package information 4.6 IPAK (TO-251) type A package information Figure 28. IPAK (TO-251) type A package outline 0068771_IK_typeA_rev14 DS7026 - Rev 3 page 20/27 STD4N52K3, STP4N52K3, STU4N52K3 IPAK (TO-251) type A package information Table 14. IPAK (TO-251) type A package mechanical data Dim. mm Min. Typ. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 b4 0.95 5.20 B5 5.40 0.30 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 H DS7026 - Rev 3 Max. 4.60 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 V1 10° 1.00 page 21/27 STD4N52K3, STP4N52K3, STU4N52K3 IPAK (TO-251) type C package information 4.7 IPAK (TO-251) type C package information Figure 29. IPAK (TO-251) type C package outline 0068771_IK_typeC_rev14 DS7026 - Rev 3 page 22/27 STD4N52K3, STP4N52K3, STU4N52K3 IPAK (TO-251) type C package information Table 15. IPAK (TO-251) type C package mechanical data Dim. mm Min. Typ. Max. A 2.20 2.30 2.35 A1 0.90 1.00 1.10 b 0.66 0.79 b2 DS7026 - Rev 3 0.90 b4 5.23 5.33 5.43 c 0.46 0.59 c2 0.46 0.59 D 6.00 6.10 6.20 D1 5.20 5.37 5.55 E 6.50 6.60 6.70 E1 4.60 4.78 4.95 e 2.20 2.25 2.30 e1 4.40 4.50 4.60 H 16.18 16.48 16.78 L 9.00 9.30 9.60 L1 0.80 1.00 1.20 L2 0.90 1.08 1.25 θ1 3° 5° 7° θ2 1° 3° 5° page 23/27 STD4N52K3, STP4N52K3, STU4N52K3 Ordering information 5 Ordering information Table 16. Order codes Order code Marking STD4N52K3 STP4N52K3 STU4N52K3 DS7026 - Rev 3 4N52K3 Package Packing DPAK Tape and reel TO-220 Tube IPAK Tube page 24/27 STD4N52K3, STP4N52K3, STU4N52K3 Revision history Table 17. Document revision history Date Version 09-Nov-2010 1 Changes First release Updated packages order in Table 1: Device summary. 19-Feb-2013 2 Updated Table 4: Package mechanical data and Table 5: Packaging mechanical data. Minor text changes on the cover page. The part number STF4N52K3 has been moved to a separate datasheet. Removed maturity status indication from cover page. The document status is production data. 20-Aug-2018 3 Updated title and features in cover page. Updated Section 1 Electrical ratings, Section 2 Electrical characteristics and Section 2.1 Electrical characteristics curves. Added Section 5 Ordering information. Minor text changes. DS7026 - Rev 3 page 25/27 STD4N52K3, STP4N52K3, STU4N52K3 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 4.1 DPAK (TO-252) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.2 DPAK (TO-252) type C package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4.3 DPAK (TO-252) type E package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.4 DPAK (TO-252) packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 4.5 TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 4.6 IPAK (TO-251) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 4.7 IPAK (TO-251) type C package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25 DS7026 - Rev 3 page 26/27 STD4N52K3, STP4N52K3, STU4N52K3 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS7026 - Rev 3 page 27/27