STF8N80K5

STF8N80K5, STFI8N80K5 N-channel 800 V, 0.8 Ω typ., 6 A MDmesh™ K5 Power MOSFET in TO-220FP and I2PAKFP packages Datasheet − production data Features Order codes STF8N80K5 STFI8N80K5 VDS RDS(on)max. ID PTOT 800 V 0.95 Ω 6A 25 W • Industry’s lowest RDS(on) x area • Industry’s best figure of merit (FoM) 3 1 TO-220FP 1 2 I 2 2PAKFP • Ultra low gate charge 3 • 100% avalanche tested (TO-281) • Zener-protected Figure 1. Internal schematic diagram Applications • Switching applications D(2) Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. G(1) S(3) AM01476v1 Table 1. Device summary Order codes Marking STF8N80K5 October 2014 This is information on a product in full production. Packaging TO-220FP 8N80K5 STFI8N80K5 Package I2PAKFP (TO-281) DocID024419 Rev 3 Tube 1/15 www.st.com 15 Contents STF8N80K5, STFI8N80K5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 .............................................. 9 DocID024419 Rev 3 STF8N80K5, STFI8N80K5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit ± 30 V 6 (1) A Drain current TC = 100 °C 4 (1) A IDM (2) Drain current (pulsed) 24 (1) A PTOT Total dissipation at TC = 25 °C 25 W IAR (3) Max current during repetitive or single pulse avalanche 2 A EAS (4) Single pulse avalanche energy (starting TJ = 25 °C, ID=IAS, VDD= 50 V) 114 mJ VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) 2500 V Peak diode recovery voltage slope 4.5 V/ns MOSFET dv/dt ruggedness 50 V/ns VGS ID Gate-source voltage Drain current TC = 25 °C ID dv/dt (5) dv/dt Parameter (6) Tj Tstg Operating junction temperature °C -55 to 150 Storage temperature °C 1. Limited by package. 2. Pulse width limited by safe operating area. 3. Pulse width limited by TJmax. 4. Starting TJ = 25 °C, ID=IAS, VDD= 50 V 5. ISD ≤ 6 A, di/dt ≤ 100 A/µs, VDS(peak) ≤ V(BR)DSS 6. VDS ≤ 640 V Table 3. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max. 5 °C/W Rthj-amb Thermal resistance junction-amb max. 62.5 °C/W DocID024419 Rev 3 3/15 Electrical characteristics 2 STF8N80K5, STFI8N80K5 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS= 0 Min. Typ. Max. Unit 800 V VDS = 800 V, 1 µA VDS = 800 V, Tc=125 °C 50 µA Gate body leakage current (VDS = 0) VGS = ± 20 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA 4 5 V RDS(on) Static drain-source onresistance VGS = 10 V, ID= 3 A 0.8 0.95 Ω Min. Typ. Max. Unit - 450 - pF - 50 - pF IDSS Zero gate voltage drain current (VGS = 0) IGSS 3 Table 5. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance - 1 - pF Equivalent capacitance time related - 57 - pF - 24 - pF Co(tr)(1) Co(er) (2) VDS =100 V, f=1 MHz, VGS=0 Equivalent capacitance energy related VGS = 0, VDS = 0 to 640 V RG Intrinsic gate resistance f = 1 MHz open drain - 6 - Ω Qg Total gate charge - 16.5 - nC Qgs Gate-source charge - 3.2 - nC Qgd Gate-drain charge VDD = 640 V, ID = 6 A VGS =10 V (see Figure 16) - 11 - nC 1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 4/15 DocID024419 Rev 3 STF8N80K5, STFI8N80K5 Electrical characteristics Table 6. Switching times Symbol td(on) tr Parameter Test conditions Turn-on delay time tf Typ. Max. Unit - 12 - ns 14 - ns 32 - ns 20 - ns Typ. Max. Unit 6 A 24 A 1.5 V VDD = 400 V, ID = 3 A, RG=4.7 Ω, VGS=10 V (see Figure 18) Rise time td(off) Min. Turn-off delay time Fall time Table 7. Source drain diode Symbol ISD ISDM VSD 1. (1) Parameter Test conditions Source-drain current Min. - Source-drain current (pulsed) Forward on voltage ISD= 6 A, VGS=0 - trr Reverse recovery time - Qrr Reverse recovery charge IRRM Reverse recovery current ISD= 6 A, VDD= 60 V di/dt = 100 A/µs, (see Figure 17) ISD= 6 A, VDD= 60 V di/dt=100 A/µs, Tj=150 °C (see Figure 17) trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current 300 ns 3 µC 20 A - 415 ns - 3.8 µC - 18 A Min Typ. Max. Unit 30 - - V Pulsed: pulse duration = 300µs, duty cycle 1.5% Table 8. Gate-source Zener diode Symbol Parameter Test conditions V(BR)GSO Gate-source breakdown voltage IGS = ± 1mA, ID=0 The built-in back-to-back Zener diodes have been specifically designed to enhance the ESD capability of the device. The Zener voltage is appropriate for efficient and cost-effective intervention to protect the device integrity. These integrated Zener diodes thus eliminate the need for external components. DocID024419 Rev 3 5/15 Electrical characteristics 2.1 STF8N80K5, STFI8N80K5 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance AM15631v1 ID (A) 10 is ea is th x in n ma tio y ra d b e e p O imit L 1 ) ar on 10µs S( D R 100µs 1ms Tj=150°C Tc=25°C Single pulse 0.1 0.01 0.1 1 10 10ms VDS(V) 100 Figure 4. Output characteristics Figure 5. Transfer characteristics AM15633v1 ID (A) AM15634v1 ID (A) VGS=10, 11V 12 10 10 8 8 8V 6 6 4 4 7V 2 2 6V 0 0 4 8 12 16 0 VDS(V) Figure 6. Gate charge vs gate-source voltage VGS (V) VDS AM15635v1 VDS VDD=640V ID=6A 12 (V) 600 10 500 8 400 6 300 4 200 2 100 0 0 6/15 VDS=20V 12 9V 4 8 12 16 0 Qg(nC) 5 6 7 9 8 10 VGS(V) Figure 7. Static drain-source on-resistance AM15636v1 RDS(on) (Ω) VGS=10V 1.2 1.0 0.8 0.6 0.4 DocID024419 Rev 3 0 2 4 6 8 10 12 ID(A) STF8N80K5, STFI8N80K5 Electrical characteristics Figure 8. Capacitance variations Figure 9. Output capacitance stored energy AM15637v1 C (pF) AM15638v1 Eoss (µJ) 1000 6 Ciss 100 4 Coss 2 10 Crss 1 0.1 1 100 10 Figure 10. Normalized gate threshold voltage vs. temperature AM15639v1 VGS(th) (norm) 0 0 VDS(V) ID=100µA VDS=VGS 200 400 600 VDS(V) Figure 11. Normalized on-resistance vs. temperature AM15640v1 RDS(on) (norm) VGS=10V ID=3 A 2.4 1 2 1.6 0.8 1.2 0.6 0.8 0.4 -50 50 0 TJ(°C) 100 Figure 12. Drain-source diode forward characteristics AM15641v1 VSD (V) TJ=-50°C 0.4 -50 0 TJ(°C) AM15642v1 VDS (norm) ID = 1mA 1.06 TJ=25°C 0.8 100 Figure 13. Normalized VDS vs. temperature 1.1 0.9 50 1.02 0.7 0.98 TJ=150°C 0.6 0.5 1 0.94 0.9 2 3 4 5 ISD(A) DocID024419 Rev 3 -50 0 50 100 TJ(°C) 7/15 Electrical characteristics STF8N80K5, STFI8N80K5 Figure 14. Maximum avalanche energy vs. starting TJ AM15643v1 EAS (mJ) VDD=50V ID=2A 100 80 60 40 20 0 0 8/15 40 80 120 TJ(°C) DocID024419 Rev 3 STF8N80K5, STFI8N80K5 3 Test circuits Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 17. Test circuit for inductive load switching and diode recovery times A A D.U.T. FAST DIODE B B AM01469v1 Figure 18. Unclamped inductive load test circuit L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 DocID024419 Rev 3 10% AM01473v1 9/15 Package mechanical data 4 STF8N80K5, STFI8N80K5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/15 DocID024419 Rev 3 STF8N80K5, STFI8N80K5 Package mechanical data Figure 21. TO-220FP drawing 7012510_Rev_K_B DocID024419 Rev 3 11/15 Package mechanical data STF8N80K5, STFI8N80K5 Table 9. TO-220FP mechanical data mm Dim. Min. Typ. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 12/15 Max. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 DocID024419 Rev 3 STF8N80K5, STFI8N80K5 Package mechanical data Figure 22. I2PAKFP (TO-281) drawing UHY$ Table 10. I2PAKFP (TO-281) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 B 2.50 2.70 D 2.50 2.75 D1 0.65 0.85 E 0.45 0.70 F 0.75 1.00 F1 1.20 G 4.95 H 10.00 10.40 L1 21.00 23.00 L2 13.20 14.10 L3 10.55 10.85 L4 2.70 3.20 L5 0.85 1.25 L6 7.30 7.50 - DocID024419 Rev 3 5.20 13/15 Revision history 5 STF8N80K5, STFI8N80K5 Revision history Table 11. Document revision history Date Revision 25-Mar-2012 1 First release. Part numbers previously included in datasheet DM00062075 27-Mar-2013 2 Added: MOSFET dv/dt ruggedness on Table 2 3 Updated title with “MDmesh™ K5” nomenclature Document status promoted from preliminary data to production data Updated cover page Features list Updated cover page Description Updated zener diode descriptions in Section 2: Electrical characteristics Updated Figure 7: Static drain-source on-resistance Reordered drawings and tables in Section 4: Package mechanical data 28-Oct-2014 14/15 Changes DocID024419 Rev 3 STF8N80K5, STFI8N80K5 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. 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