STGW10M65DF2
Trench gate field-stop IGBT, M series 650 V, 10 A
low-loss in TO-247 package
Datasheet - production data
Features
3
2
1
6 µs of short-circuit withstand time
VCE(sat) = 1.55 V (typ.) @ IC = 10 A
Tight parameter distribution
Safer paralleling
Positive VCE(sat) temperature coefficient
Low thermal resistance
Soft and very fast recovery antiparallel diode
Maximum junction temperature: TJ = 175 °C
Applications
TO-247
Figure 1: Internal schematic diagram
Motor control
UPS
PFC
General purpose inverter
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the M series
IGBTs, which represent an optimal balance
between inverter system performance and
efficiency where low-loss and short-circuit
functionality are essential. Furthermore, the
positive VCE(sat) temperature coefficient and tight
parameter distribution result in safer paralleling
operation.
Table 1: Device summary
Order code
Marking
Package
Packing
STGW10M65DF2
G10M65DF2
TO-247
Tube
April 2017
DocID029083 Rev 2
This is information on a product in full production.
1/16
www.st.com
Contents
STGW10M65DF2
Contents
1
Electrical ratings ............................................................................. 3
2
Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3
Test circuits ................................................................................... 12
4
Package information ..................................................................... 13
4.1
5
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TO-247 package information ........................................................... 13
Revision history ............................................................................ 15
DocID029083 Rev 2
STGW10M65DF2
1
Electrical ratings
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Value
Unit
Collector-emitter voltage (VGE = 0 V)
650
V
Continuous collector current at TC = 25 °C
20
Continuous collector current at TC = 100 °C
10
ICP(1)
Pulsed collector current
40
A
VGE
Gate-emitter voltage
±20
V
Continuous forward current at TC = 25 °C
20
Continuous forward current at TC = 100 °C
10
IFP(1)
Pulsed forward current
40
A
PTOT
Total dissipation at TC = 25 °C
115
W
TSTG
Storage temperature range
- 55 to 150
Operating junction temperature range
- 55 to 175
VCES
IC
IF
TJ
Parameter
A
A
°C
Notes:
(1)Pulse
width limited by maximum junction temperature.
Table 3: Thermal data
Symbol
Parameter
Value
RthJC
Thermal resistance junction-case IGBT
1.3
RthJC
Thermal resistance junction-case diode
2.08
RthJA
Thermal resistance junction-ambient
DocID029083 Rev 2
Unit
°C/W
50
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Electrical characteristics
2
STGW10M65DF2
Electrical characteristics
TC = 25 °C unless otherwise specified
Table 4: Static characteristics
Symbol
V(BR)CES
VCE(sat)
Parameter
Collector-emitter breakdown
voltage
Collector-emitter saturation
voltage
Test conditions
Min.
VGE = 0 V, IC = 250 μA
650
Forward on-voltage
1.55
VGE = 15 V, IC = 10 A,
TJ = 125 °C
1.9
VGE = 15 V, IC = 10 A,
TJ = 175 °C
2.1
1.5
IF = 10 A, TJ = 125 °C
1.3
IF = 10 A, TJ = 175 °C
1.2
VGE(th)
Gate threshold voltage
VCE = VGE, IC = 250 µA
ICES
Collector cut-off current
IGES
Gate-emitter leakage current
Symbol
Parameter
5
Max.
Unit
V
VGE = 15 V, IC = 10 A
IF = 10 A
VF
Typ.
6
2.0
V
2.25
V
7
V
VGE = 0 V, VCE = 650 V
25
µA
VCE = 0 V, VGE = ± 20 V
±250
µA
Unit
Table 5: Dynamic characteristics
4/16
Test conditions
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer
capacitance
Qg
Total gate charge
Qge
Gate-emitter charge
Qgc
Gate-collector charge
VCE= 25 V, f = 1 MHz,
VGE = 0 V
Min.
Typ.
Max.
-
840
-
-
63
-
VCC = 520 V, IC = 10 A,
VGE = 0 to 15 V
(see Figure 30: " Gate charge
test circuit")
DocID029083 Rev 2
16
pF
-
-
28
-
-
6
-
-
12
-
nC
STGW10M65DF2
Electrical characteristics
Table 6: IGBT switching characteristics (inductive load)
Symbol
td(on)
tr
(di/dt)on
td(off)
tf
Parameter
Test conditions
Typ.
Max.
Unit
Turn-on delay time
19
-
ns
Current rise time
7.4
-
ns
1086
-
A/µs
91
-
ns
92
-
ns
0.12
-
mJ
Turn-on current slope
Turn-off-delay time
Current fall time
Min.
VCE = 400 V, IC = 10 A,
VGE = 15 V, RG = 22 Ω
(see Figure 29: " Test circuit
for inductive load switching" )
Eon(1)
Turn-on switching energy
(2)
Turn-off switching energy
0.27
-
mJ
Total switching energy
0.39
-
mJ
Turn-on delay time
18
-
ns
Current rise time
9
-
ns
890
-
A/µs
Eoff
Ets
td(on)
tr
(di/dt)on
td(off)
tf
Turn-on current slope
Turn-off-delay time
Current fall time
VCE = 400 V, IC = 10 A,
VGE = 15 V, RG = 22 Ω
TJ = 175 °C
(see Figure 29: " Test circuit
for inductive load switching" )
90
-
ns
170
-
ns
0.26
-
mJ
Eon(1)
Turn-on switching energy
(2)
Turn-off switching energy
0.4
-
mJ
Total switching energy
0.66
-
mJ
Eoff
Ets
tsc
Short-circuit withstand time
VCC ≤ 400 V, VGE = 13 V,
TJstart = 150 °C
10
-
VCC ≤ 400 V, VGE = 15 V,
TJstart = 150 °C
6
-
µs
Notes:
(1)Including
the reverse recovery of the diode.
(2)Including
the tail of the collector current.
Table 7: Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
trr
Reverse recovery time
Qrr
Reverse recovery charge
Irrm
Reverse recovery current
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
Err
Reverse recovery energy
trr
Reverse recovery time
Qrr
Reverse recovery charge
Irrm
Reverse recovery current
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
Err
Reverse recovery energy
IF = 10 A, VR = 400 V,
VGE = 15 V,
di/dt = 1000 A/µs
(see Figure 29: " Test circuit
for inductive load switching")
IF = 10 A, VR = 400 V,
VGE = 15 V,
di/dt = 1000 A/μs,
TJ = 175 °C
(see Figure 29: " Test circuit
for inductive load switching")
DocID029083 Rev 2
Min.
Typ.
Max.
Unit
-
96
-
ns
-
373
-
nC
-
13
-
A
-
661
-
A/µs
-
52
-
µJ
-
201
-
ns
-
1352
-
nC
-
19
-
A
-
405
-
A/µs
-
150
-
µJ
5/16
Electrical characteristics
2.1
STGW10M65DF2
Electrical characteristics (curves)
Figure 2: Power dissipation vs. case temperature
Figure 3: Collector current vs. case temperature
Figure 4: Output characteristics (TJ = 25 °C)
Figure 5: Output characteristics (TJ = 175 °C)
Figure 6: VCE(sat) vs. junction temperature
Figure 7: VCE(sat) vs. collector current
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DocID029083 Rev 2
STGW10M65DF2
Electrical characteristics
Figure 8: Collector current vs. switching frequency
Figure 9: Forward bias safe operating area
Figure 10: Transfer characteristics
Figure 11: Diode VF vs. forward current
Figure 12: Normalized VGE(th) vs. junction
temperature
Figure 13: Normalized V(BR)CES vs. junction
temperature
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Electrical characteristics
STGW10M65DF2
Figure 14: Capacitance variations
Figure 15: Gate charge vs. gate-emitter voltage
Figure 16: Switching energy vs. collector current
Figure 17: Switching energy vs. gate resistance
Figure 18: Switching energy vs. temperature
Figure 19: Switching energy vs. collector emitter
voltage
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DocID029083 Rev 2
STGW10M65DF2
Electrical characteristics
Figure 20: Short-circuit time and current vs. VGE
Figure 21: Switching times vs. collector current
Figure 22: Switching times vs. gate resistance
Figure 23: Reverse recovery current vs. diode
current slope
Figure 24: Reverse recovery time vs. diode current
slope
Figure 25: Reverse recovery charge vs. diode
current slope
DocID029083 Rev 2
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Electrical characteristics
STGW10M65DF2
Figure 26: Reverse recovery energy vs. diode current slope
Figure 27: Thermal impedance for IGBT
ZthTO2T_B
K
δ=0.5
0.2
0.1
10
0.05
-1
0.02
Zth=k Rthj-c
δ=tp/t
0.01
Single pulse
tp
t
-2
10 -5
10
10/16
10
-4
10
-3
10
-2
DocID029083 Rev 2
10
-1
tp (s)
STGW10M65DF2
Electrical characteristics
Figure 28: Thermal impedance for diode
DocID029083 Rev 2
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Test circuits
3
STGW10M65DF2
Test circuits
Figure 29: Test circuit for inductive load
switching
C
A
Figure 30: Gate charge test circuit
A
L=100 µH
G
E
B
B
3.3
µF
C
G
+
RG
VCC
1000
µF
D.U.T
E
-
AM01504v 1
Figure 31: Switching waveform
Figure 32: Diode reverse recovery waveform
di/dt
Qrr
trr
IF
ts
tf
t
IRRM
10%
IRRM
VRRM
dv/dt
AM01507v1
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DocID029083 Rev 2
STGW10M65DF2
4
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
4.1
TO-247 package information
Figure 33: TO-247 package outline
0075325_8
DocID029083 Rev 2
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Package information
STGW10M65DF2
Table 8: TO-247 package mechanical data
mm
Dim.
Min.
Max.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
L
14.20
14.80
L1
3.70
4.30
L2
14/16
Typ.
5.45
5.60
18.50
ØP
3.55
ØR
4.50
S
5.30
DocID029083 Rev 2
3.65
5.50
5.50
5.70
STGW10M65DF2
5
Revision history
Revision history
Table 9: Document revision history
Date
Revision
08-Mar-2016
1
First release.
2
Modified title, features and applications on cover page
Modified Table 2: "Absolute maximum ratings", Table 4: "Static
characteristics" and Table 7: "Diode switching characteristics
(inductive load)"
Minor text changes.
07-Apr-2017
Changes
DocID029083 Rev 2
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STGW10M65DF2
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