STGW75M65DF2,
STGWA75M65DF2
Trench gate field-stop IGBT, M series 650 V, 75 A low-loss
in TO-247 and TO-247 long leads packages
Datasheet - production data
Features
6 µs of short-circuit withstand time
VCE(sat) = 1.65 V (typ.) @ IC = 75 A
Tight parameter distribution
Safer paralleling
Positive VCE(sat) temperature coefficient
Low thermal resistance
Soft and very fast recovery antiparallel diode
Maximum junction temperature: TJ = 175 °C
Applications
Figure 1: Internal schematic diagram
C (2)
Motor control
UPS
PFC
General purpose inverter
Description
These devices are IGBTs developed using an
advanced proprietary trench gate field-stop
structure. The devices are part of the M series
IGBTs, which represent an optimal balance
between inverter system performance and
efficiency where low-loss and short-circuit
functionality are essential. Furthermore, the
positive VCE(sat) temperature coefficient and tight
parameter distribution result in safer paralleling
operation.
G (1)
Sc12850_no_tab
E (3)
Table 1: Device summary
Order code
STGW75M65DF2
STGWA75M65DF2
May 2017
Marking
G75M65DF2
DocID028695 Rev 3
This is information on a product in full production.
Package
TO-247
TO-247 long leads
Packing
Tube
1/18
www.st.com
Contents
STGW75M65DF2, STGWA75M65DF2
Contents
1
Electrical ratings ............................................................................. 3
2
Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3
Test circuits ................................................................................... 12
4
Package information ..................................................................... 13
5
2/18
4.1
TO-247 package information ........................................................... 13
4.2
TO-247 long leads package information ......................................... 15
Revision history ............................................................................ 17
DocID028695 Rev 3
STGW75M65DF2, STGWA75M65DF2
1
Electrical ratings
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCES
Collector-emitter voltage (VGE = 0 V)
650
V
IC(1)
Continuous collector current at TC = 25 °C
120
A
IC
Continuous collector current at TC = 100 °C
75
A
ICP(2)
Pulsed collector current
225
A
VGE
Gate-emitter voltage
±20
V
Continuous forward current at TC = 25 °C
120
A
IF
(1)
IF
Continuous forward current at TC = 100 °C
75
A
IFP(2)
Pulsed forward current
225
A
PTOT
Total dissipation at TC = 25 °C
468
W
TSTG
Storage temperature range
- 55 to 150
°C
Operating junction temperature range
- 55 to 175
°C
Value
Unit
TJ
Notes:
(1)Current
(2)Pulse
level is limited by bond wires
width limited by maximum junction temperature.
Table 3: Thermal data
Symbol
Parameter
RthJC
Thermal resistance junction-case IGBT
0.32
°C/W
RthJC
Thermal resistance junction-case diode
0.74
°C/W
RthJA
Thermal resistance junction-ambient
50
°C/W
DocID028695 Rev 3
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Electrical characteristics
2
STGW75M65DF2, STGWA75M65DF2
Electrical characteristics
TC = 25 °C unless otherwise specified
Table 4: Static characteristics
Symbol
V(BR)CES
VCE(sat)
Parameter
Collector-emitter breakdown
voltage
Collector-emitter saturation
voltage
Test conditions
Min.
VGE = 0 V, IC = 250 μA
650
Forward on-voltage
1.65
VGE = 15 V, IC = 75 A,
TJ = 125 °C
1.95
VGE = 15 V, IC = 75 A,
TJ = 175 °C
2.1
2
IF =75 A, TJ = 125 °C
1.75
IF = 75 A, TJ = 175 °C
1.6
VGE(th)
Gate threshold voltage
VCE = VGE, IC = 2 mA
ICES
Collector cut-off current
IGES
Gate-emitter leakage current
5
Max.
Unit
V
VGE = 15 V, IC = 75 A
IF = 75 A
VF
Typ.
6
2.1
V
2.85
V
7
V
VGE = 0 V, VCE = 650 V
25
µA
VCE = 0 V, VGE= ± 20 V
±250
µA
Unit
Table 5: Dynamic characteristics
Symbol
Cies
4/18
Parameter
Test conditions
Input capacitance
VCE = 25 V, f = 1 MHz,
VGE = 0 V
Coes
Output capacitance
Cres
Reverse transfer capacitance
Qg
Total gate charge
Qge
Gate-emitter charge
Qgc
Gate-collector charge
VCC = 520 V, IC = 75 A,
VGE = 0 to 15 V
(see Figure 30: " Gate
charge test circuit")
DocID028695 Rev 3
Min.
Typ.
Max.
-
6290
-
-
390
-
-
136
-
-
225
-
-
53
-
-
87
-
pF
nC
STGW75M65DF2, STGWA75M65DF2
Electrical characteristics
Table 6: IGBT switching characteristics (inductive load)
Symbol
td(on)
tr
Parameter
Test conditions
Min.
Turn-on delay time
Current rise time
(di/dt)on
td(off)
tf
Turn-on current slope
Turn-off-delay time
Current fall time
VCE = 400 V, IC = 75 A,
VGE = 15 V, RG = 3.3 Ω
(see Figure 29: " Test
circuit for inductive load
switching" )
Typ.
Max.
Unit
47
-
ns
22.4
-
ns
2680
-
A/µs
125
-
ns
93
-
ns
0.69
-
mJ
Eon(1)
Turn-on switching energy
(2)
Turn-off switching energy
2.54
-
mJ
Total switching energy
3.23
-
mJ
48
-
ns
25
-
ns
2420
-
A/µs
125
-
ns
167
-
ns
2.17
-
mJ
Eoff
Ets
td(on)
tr
Turn-on delay time
Current rise time
(di/dt)on
td(off)
tf
Turn-on current slope
Turn-off-delay time
Current fall time
VCE = 400 V, IC = 75 A,
VGE = 15 V, RG = 3.3 Ω
TJ = 175 °C
(see Figure 29: " Test
circuit for inductive load
switching" )
Eon(1)
Turn-on switching energy
(2)
Turn-off switching energy
3.45
-
mJ
Total switching energy
5.62
-
mJ
Eoff
Ets
tsc
Short-circuit withstand time
VCC ≤ 400 V, VGE = 13 V,
TJstart ≤ 150 °C
10
VCC ≤ 400 V, VGE = 15 V,
TJstart ≤ 150 °C
6
µs
Notes:
(1)Including
the reverse recovery of the diode.
(2)Including
the tail of the collector current.
Table 7: Diode switching characteristics (inductive load)
Symbol
trr
Parameter
Test conditions
Reverse recovery time
Qrr
Reverse recovery charge
Irrm
Reverse recovery current
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
Err
Reverse recovery energy
trr
Reverse recovery time
Qrr
Reverse recovery charge
Irrm
Reverse recovery current
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
Err
Reverse recovery energy
IF = 75 A, VR = 400 V,
VGE = 15 V,
di/dt = 1000 A/μs
(see Figure 29: " Test
circuit for inductive load
switching")
IF = 75 A, VR = 400 V,
VGE = 15 V,
di/dt = 1000 A/μs,
TJ = 175 °C
(see Figure 29: " Test
circuit for inductive load
switching")
DocID028695 Rev 3
Min.
Typ.
Max.
Unit
-
165
-
ns
-
1.72
-
µC
-
25
-
A
-
750
-
A/µs
-
289
-
µJ
-
256
-
ns
-
6.85
-
µC
-
48
-
A
-
300
-
A/µs
-
1033
-
µJ
5/18
Electrical characteristics
2.1
STGW75M65DF2, STGWA75M65DF2
Electrical characteristics (curves)
Figure 2: Power dissipation vs. case temperature
Figure 3: Collector current vs. case temperature
Figure 4: Output characteristics (TJ = 25 °C)
Figure 5: Output characteristics (TJ = 175 °C)
Figure 6: VCE(sat) vs. junction temperature
Figure 7: VCE(sat) vs. collector current
6/18
DocID028695 Rev 3
STGW75M65DF2, STGWA75M65DF2
Electrical characteristics
Figure 8: Collector current vs. switching frequency
Figure 9: Forward bias safe operating area
Figure 10: Transfer characteristics
Figure 11: Diode VF vs. forward current
Figure 12: Normalized VGE(th) vs. junction
temperature
Figure 13: Normalized V(BR)CES vs. junction
temperature
DocID028695 Rev 3
7/18
Electrical characteristics
STGW75M65DF2, STGWA75M65DF2
Figure 14: Capacitance variations
Figure 15: Gate charge vs. gate-emitter voltage
Figure 16: Switching energy vs. collector current
Figure 17: Switching energy vs. gate resistance
Figure 18: Switching energy vs. temperature
Figure 19: Switching energy vs. collector emitter
voltage
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DocID028695 Rev 3
STGW75M65DF2, STGWA75M65DF2
Electrical characteristics
Figure 20: Short-circuit time and current vs. VGE
Figure 21: Switching times vs. collector current
Figure 22: Switching times vs. gate resistance
Figure 23: Reverse recovery current vs. diode
current slope
Figure 24: Reverse recovery time vs. diode current
slope
Figure 25: Reverse recovery charge vs. diode
current slope
DocID028695 Rev 3
9/18
Electrical characteristics
STGW75M65DF2, STGWA75M65DF2
Figure 26: Reverse recovery energy vs. diode current slope
Figure 27: Thermal impedance for IGBT
10/18
DocID028695 Rev 3
STGW75M65DF2, STGWA75M65DF2
Electrical characteristics
Figure 28: Thermal impedance for diode
DocID028695 Rev 3
11/18
Test circuits
3
STGW75M65DF2, STGWA75M65DF2
Test circuits
Figure 29: Test circuit for inductive load
switching
C
A
Figure 30: Gate charge test circuit
A
L=100 µH
G
E
B
B
3.3
µF
C
G
+
RG
VCC
1000
µF
D.U.T
E
-
AM01504v 1
Figure 31: Switching waveform
Figure 32: Diode reverse recovery waveform
di/dt
Qrr
trr
IF
ts
tf
t
IRRM
10%
IRRM
VRRM
dv/dt
AM01507v1
12/18
DocID028695 Rev 3
STGW75M65DF2, STGWA75M65DF2
4
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
4.1
TO-247 package information
Figure 33: TO-247 package outline
0075325_8
DocID028695 Rev 3
13/18
Package information
STGW75M65DF2, STGWA75M65DF2
Table 8: TO-247 package mechanical data
mm
Dim.
Min.
Max.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
L
14.20
14.80
L1
3.70
4.30
L2
14/18
Typ.
5.45
5.60
18.50
ØP
3.55
ØR
4.50
S
5.30
DocID028695 Rev 3
3.65
5.50
5.50
5.70
STGW75M65DF2, STGWA75M65DF2
4.2
Package information
TO-247 long leads package information
Figure 34: TO-247 long leads package outline
DocID028695 Rev 3
15/18
Package information
STGW75M65DF2, STGWA75M65DF2
Table 9: TO-247 long leads package mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.90
5.00
5.10
A1
2.31
2.41
2.51
A2
1.90
2.00
2.10
b
1.16
1.26
b2
3.25
b3
2.25
c
0.59
0.66
D
20.90
21.00
21.10
E
15.70
15.80
15.90
E2
4.90
5.00
5.10
E3
2.40
2.50
2.60
e
5.34
5.44
5.54
L
19.80
19.92
20.10
P
3.50
3.60
Q
5.60
S
6.05
L1
16/18
4.30
DocID028695 Rev 3
3.70
6.00
6.15
6.25
STGW75M65DF2, STGWA75M65DF2
5
Revision history
Revision history
Table 10: Document revision history
Date
Revision
02-Dec-2015
1
First release.
2
Inserted device in TO-247 and document updated accordingly.
Inserted Section 2.1: "Electrical characteristics (curves)".
Document status promoted from preliminary to production data.
Minor text changes.
3
Modified: title, features and application on cover page.
Modified Table 4: "Static characteristics", Table 7: "Diode
switching characteristics (inductive load)" and Figure 13:
"Normalized V(BR)CES vs. junction temperature ".
Minor text changes.
15-Jun-2016
03-May-2017
Changes
DocID028695 Rev 3
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STGW75M65DF2, STGWA75M65DF2
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DocID028695 Rev 3