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STGW20NC60VD

STGW20NC60VD

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    TO247

  • 描述:

    IGBT 600V 60A 200W Through Hole TO-247-3

  • 数据手册
  • 价格&库存
STGW20NC60VD 数据手册
STGW20NC60VD 30 A, 600 V, very fast IGBT Features ■ High current capability ■ High frequency operation up to 50 KHz ■ Very soft ultra fast recovery antiparallel diode Description This IGBT utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. 1 2 3 TO-247 Applications ■ High frequency inverters, UPS ■ Motor drive ■ SMPS and PFC in both hard switch and resonant topologies Table 1. Figure 1. Internal schematic diagram Device summary Order code Marking Package Packaging STGW20NC60VD GW20NC60VD TO-247 Tube March 2010 Doc ID 9983 Rev 5 1/14 www.st.com 14 Contents STGW20NC60VD Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ........................... 7 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Doc ID 9983 Rev 5 STGW20NC60VD 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VGE = 0) 600 V IC(1) Continuous collector current at Tc= 25°C 60 A IC (1) Continuous collector current at Tc= 100°C 30 A ICP (2) Pulsed collector current 150 A ICL(3) Turn-off latching current 100 A VGE Gate-emitter voltage ± 20 V Diode RMS forward current at Tc=25°C 30 A IFSM Surge not repetitive forward current tp = 10 ms sinusoidal 120 A PTOT Total dissipation at TC = 25°C 200 W – 55 to 150 °C IF Tj Tstg Operating junction temperature Storage temperature 1. Calculated according to the iterative formula: T j ( max ) – T C I C ( T C ) = --------------------------------------------------------------------------------------------------------R thj – c × V CE ( sat ) ( max ) ( T j ( max ), I C ( T C ) ) 2. Pulse width limited by maximum junction temperature and turn-off within RBSOA. 3. Vclamp = 80 % VCES, TJ = 150 °C, RG = 10 Ω, VGE = 15 V. Table 3. Symbol Rthj-case Rthj-amb Thermal data Parameter Value Unit Thermal resistance junction-case IGBT 0.63 °C/W Thermal resistance junction-case diode 1.5 °C/W Thermal resistance junction-ambient 50 °C/W Doc ID 9983 Rev 5 3/14 Electrical characteristics 2 STGW20NC60VD Electrical characteristics (Tj =25°C unless otherwise specified) Table 4. Symbol Parameter Test conditions V(BR)CES Collector-emitter breakdown IC = 1 mA voltage (VGE = 0) VCE(sat) Collector-emitter saturation voltage VGE=15 V, IC=20 A VGE=15 V, IC=20 A,Tj=125 °C VGE(th) Gate threshold voltage VCE= VGE, IC= 250 µA ICES Collector-cut-off current (VGE = 0) IGES gfs Table 5. Symbol Cies Coes Cres Qg Qge Qgc 4/14 Static Min. Typ. Max. Unit 600 V 1.8 1.7 2.5 V V 5.75 V VCE = 600 V VCE=600 V, Tj= 125 °C 250 1 µA mA Gate-emitter leakage current (VCE = 0) VGE = ± 20V ±100 nA Forward transconductance VCE = 15 V, IC= 20 A 3.75 15 S Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test conditions Min. Typ. VCE = 25V, f = 1 MHz, VGE= 0 - 2200 225 50 - 100 16 45 VCE = 390V, IC = 20A, VGE = 15V, (see Figure 18) Doc ID 9983 Rev 5 Max Unit pF pF pF 140 nC nC nC STGW20NC60VD Table 6. Symbol td(on) tr (di/dt)onf td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf Table 7. Symbol Electrical characteristics Switching on/off (inductive load) Parameter Test conditions Turn-on delay time Current rise time Turn-on current slope VCC=390 V, IC= 20 A, RG=3.3 Ω, VGE=15V Min. Typ. Max. Unit - 31 11 1600 - ns ns A/µs - 31 11.5 1500 - ns ns A/µs - 28 100 75 - ns ns ns - 66 150 130 - ns ns ns Min Typ. Max Unit - 220 330 550 300 450 750 µJ µJ µJ - 450 770 1220 (see Figure 17) VCC=390 V, IC= 20 A, Turn-on delay time Current rise time Turn-on current slope RG=3.3 Ω, VGE=15 V Tj=125°C (see Figure 17) VCC=390 V, IC= 20 A, Off voltage rise time Turn-off delay time Current fall time RG=3.3 Ω, VGE=15 V (see Figure 17) VCC=390 V, IC= 20 A, Off voltage rise time Turn-off delay time Current fall time RG=3.3 Ω, VGE=15 V Tj=125°C (see Figure 17) Switching energy (inductive load) Parameter Test conditions Eon (1) Eoff Ets Turn-on switching losses Turn-off switching losses Total switching losses Eon (1) Eoff Ets Turn-on switching losses Turn-off switching losses Total switching losses VCC=390 V, IC= 20 A, RG=3.3 Ω, VGE=15 V, (see Figure 19) VCC=390 V, IC= 20 A, RG=3.3 Ω, VGE=15 V, Tj= 125°C (see Figure 19) µJ µJ µJ 1. Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 19. Eon include diode recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C). Doc ID 9983 Rev 5 5/14 Electrical characteristics Table 8. Symbol Collector-emitter diode Parameter Test conditions IF = 20 A VF Forward on-voltage trr Reverse recovery time Reverse recovery charge Reverse recovery current Qrr Irrm trr Qrr Irrm 6/14 STGW20NC60VD IF = 20 A, Tj = 125°C Reverse recovery time Reverse recovery charge Reverse recovery current Min Typ. Max Unit - 2 1.6 - V V - 44 66 3 - ns nC A - 88 237 5.4 - ns nC A IF = 20 A, VR = 40 V, Tj = 25°C, di/dt =100 A/µs (see Figure 20) IF = 2 0A, VR = 40 V, Tj = 125°C, di/dt =100 A/µs (see Figure 20) Doc ID 9983 Rev 5 STGW20NC60VD Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Output characteristics Figure 3. Transfer characteristics Figure 4. Transconductance Figure 5. Collector-emitter on voltage vs temperature Figure 6. Collector-emitter on voltage vs collector current Figure 7. Normalized gate threshold vs temperature Doc ID 9983 Rev 5 7/14 Electrical characteristics Figure 8. STGW20NC60VD Normalized breakdown voltage vs temperature Figure 10. Capacitance variations Figure 9. Gate charge vs gate-emitter voltage Figure 11. Switching losses vs temperature Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector current 8/14 Doc ID 9983 Rev 5 STGW20NC60VD Electrical characteristics Figure 14. Thermal impedance Figure 15. Turn-off SOA Figure 16. Emitter-collector diode characteristics !-V ) &!  4*  # MAXIMUMVALUES  4* # TYPICALVALUES  4* # MAXIMUMVALUES            6&6 Doc ID 9983 Rev 5 9/14 Test circuits 3 STGW20NC60VD Test circuits Figure 17. Test circuit for inductive load switching Figure 18. Gate charge test circuit Figure 19. Switching waveforms Figure 20. Diode recovery times waveform 10/14 Doc ID 9983 Rev 5 STGW20NC60VD 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 9983 Rev 5 11/14 Package mechanical data STGW20NC60VD TO-247 mechanical data Dim. mm. Min. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 øP 3.55 øR 4.50 S 12/14 Typ. 3.65 5.50 5.50 Doc ID 9983 Rev 5 STGW20NC60VD 5 Revision history Revision history Table 9. Revision history Date 12-Jul-2004 09-Mar-2010 Revision Changes 4 Stylesheet updated. Added switching losses maximum values inTable 7: Switching energy (inductive load). Inserted Figure 20: Diode recovery times waveform. 5 Inserted IFSM parameter on Table 2: Absolute maximum ratings. Updated Figure 16: Emitter-collector diode characteristics and package mechanical data. Minor text changes to improve readability. Doc ID 9983 Rev 5 13/14 STGW20NC60VD Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2010 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 14/14 Doc ID 9983 Rev 5
STGW20NC60VD 价格&库存

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STGW20NC60VD
    •  国内价格
    • 1+23.57680

    库存:5

    STGW20NC60VD

      库存:7