STGW50NC60W

STGW50NC60W N-channel 600V - 55A - TO-247 Ultra fast switching PowerMESH™ IGBT Features Type VCES STGW50NC60W 600V IC VCE(sat) (max)@25°C @100°C < 2.6V ) s ( ct 55A ■ Very high frequency operation ■ Low CRES / CIES ratio (no cross-conduction susceptibility) u d o 3 Applications ■ Very high frequency inverters, UPS ■ HF, SMPS and PFC in both hard switch and resonant topologies ■ Motor drivers ■ Welding e t e l o s b -O Description Figure 1. ) s ( ct Pr 2 1 TO-247 Internal schematic diagram u d o Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “W” identifies a family optimized for very high frequency applications. r P e t e l o s b O Table 1. Device summary Order code Marking Package Packaging STGW50NC60W GW50NC60W TO-247 Tube August 2007 Rev 1 1/14 www.st.com 14 Contents STGW50NC60W Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.2 Frequency applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 ) s ( ct u d o r P e t e l o ) (s t c u d o r P e t e l o s b O 2/14 s b O STGW50NC60W 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VGS = 0) 600 V IC(1) Collector current (continuous) at TC = 25°C 100 A IC(1) Collector current (continuous) at TC = 100°C 55 A Turn-off SOA minimum current 250 VGE Gate-emitter voltage ±20 PTOT Total dissipation at TC = 25°C 285 ICL (2) Tj V du ro Operating junction temperature -55 to 150 P e 1. Calculated according to the iterative formula: ) s ( ct A W °C T –T JMAX C I ( T ) = ----------------------------------------------------------------------------------------------------C C R × V (T , I ) THJ – C CESAT ( MAX ) C C s b O 2. Vclamp = 480V, TJ=150°C, RG=10Ω, VGE=15V Table 2. Thermal resistance ) (s Symbol t e l o Parameter ct Rthj-case Thermal resistance junction-case max IGBT Rthj-amb Thermal resistance junction-ambient max e t e ol du Value Unit 0.45 °C/W 50 °C/W o r P s b O 3/14 Electrical characteristics 2 STGW50NC60W Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Static Symbol Parameter VBR(CES) Collector-emitter breakdown voltage VCE(sat) Collector-emitter saturation VGE= 15V, IC= 40A voltage VGE= 15V, IC=40A,Tc=125°C VGE(th) Gate threshold voltage VCE= VGE, IC= 250µA ICES Collector cut-off current (VGE = 0) VCE= Max rating,TC= 25°C IGES Gate-emitter leakage current (VCE = 0) VGE= ±20V, VCE= 0 Forward transconductance VCE = 15V, IC=40A gfs Table 4. Coes Cres Qg Parameter d o r t e l o s b O 4/14 Qgc t c u Total gate charge Gate-emitter charge Gate-collector charge P e Qge VCE= Max rating,TC= 125°C e t e ol ) (s Input capacitance Output capacitance Reverse transfer capacitance Min. IC= 1mA, VGE= 0 Dynamic Symbol Cies Test conditions s b O Test conditions VCE = 25V, f = 1MHz, VGE = 0 VCE = 390V, IC = 40A, VGE = 15V, Figure 16 Typ. Max. 600 V 2.1 1.9 2.6 du o r P 5.75 V 500 5 µA mA ±100 nA 25 Typ. V V ) s ( ct 3.75 Min. Unit S Max. Unit 4700 410 90 pF pF pF 195 32 82 nC nC nC STGW50NC60W Electrical characteristics Table 5. Switching on/off (inductive load) Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(Voff) tf tr(Voff) td(Voff) tf Table 6. Parameter Turn-on delay time Current rise time Turn-on current slope Eoff(1) Ets Eon Eoff(2) VCC = 390V, IC = 40A RG= 10Ω, VGE= 15V, Tj = 125°C VCC = 390V, IC = 40A RG= 10Ω, VGE= 15V, RG= 10Ω, VGE= 15V, Tj = 125°C e t e ol Switching energy (inductive load) bs Parameter Test conditions O ) Turn-on switching losses Turn-off switching losses Total switching losses s ( t c Turn-on switching losses Turn-off switching losses Total switching losses VCC = 390V, IC = 40A RG= 10Ω, VGE= 15V, Figure 15 VCC = 390V, IC = 40A RG= 10Ω, VGE= 15V, Tj = 125°C Figure 15 Max. o r P Min. Unit 52 17 2400 ns ns A/µs 50 19 2020 ns ns A/µs 31 240 35 ns ns ns ) s ( ct du VCC = 390V, IC = 40A Off voltage rise time Turn-off delay time Current fall time u d o Typ. RG= 10Ω, VGE= 15V Off voltage rise time Turn-off delay time Current fall time r P e Ets Min. VCC = 390V, IC = 40A Turn-on delay time Current rise time Turn-on current slope Symbol Eon Test conditions 59 280 63 ns ns ns Typ. Max. Unit 365 560 925 470 790 1260 µJ µJ µJ 635 910 1545 µJ µJ µJ 1. Turn-off losses include also the tail of the collector current t e l o s b O 5/14 Electrical characteristics STGW50NC60W 2.1 Electrical characteristics (curves) Figure 1. Output characteristics Figure 2. Transfer characteristics ) s ( ct u d o Figure 3. t e l o Transconductance Figure 4. ) (s t c u d o r P e t e l o s b O 6/14 r P e s b O Collector-emitter on voltage vs temperature STGW50NC60W Figure 5. Electrical characteristics Gate charge vs gate-source voltage Figure 6. Capacitance variations ) s ( ct Figure 7. Normalized gate threshold voltage vs temperature Figure 8. u d o r P e Collector-emitter on voltage vs collector current t e l o ) (s s b O t c u d o r t e l o P e Figure 9. s b O Normalized breakdown voltage vs temperature Figure 10. Switching losses vs temperature 7/14 Electrical characteristics STGW50NC60W Figure 11. Switching losses vs gate resistance Figure 12. Switching losses vs collector current ) s ( ct u d o r P e Figure 13. Turn-off SOA Figure 14. IC vs. frequency t e l o ) (s t c u d o r P e t e l o s b O 8/14 s b O STGW50NC60W 2.2 Electrical characteristics Frequency applications For a fast IGBT suitable for high frequency applications, the typical collector current vs. maximum operating frequency curve is reported. That frequency is defined as follows: fMAX = (PD - PC) / (EON + EOFF) ● The maximum power dissipation is limited by maximum junction to case thermal resistance: Equation 1 PD = ∆T / RTHJ-C considering ∆T = TJ - TC = 125 °C- 75 °C = 50°C ● ) s ( ct The conduction losses are: Equation 2 u d o PC = IC * VCE(SAT) * δ r P e with 50% of duty cycle, VCESAT typical value @125°C. ● Power dissipation during ON & OFF commutations is due to the switching frequency: t e l o Equation 3 PSW = (EON + EOFF) * freq. ● s b O Typical values @ 125°C for switching losses are used (test conditions: VCE = 390V, VGE = 15V, RG = 10 Ohm). Furthermore, diode recovery energy is included in the EON (see note 2), while the tail of the collector current is included in the EOFF measurements (see note 3). ) (s t c u d o r P e t e l o s b O 9/14 Test circuit 3 STGW50NC60W Test circuit Figure 15. Test circuit for inductive load switching Figure 16. Gate charge test circuit ) s ( ct u d o r P e t e l o ) (s t c u d o r P e t e l o s b O 10/14 s b O STGW50NC60W 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 11/14 Package mechanical data STGW50NC60W TO-247 Mechanical data mm. Dim. A Min. 4.85 Typ A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 D 19.85 E 15.45 ) s ( ct u d o 0.80 e t e ol e 5.45 L 14.20 L1 3.70 L2 øP 3.55 øR 4.50 (s) t c u S d o r P e t e l o s b O 12/14 Max. 5.15 -O bs Pr 20.15 15.75 14.80 4.30 18.50 3.65 5.50 5.50 STGW50NC60W 5 Revision history Revision history Table 7. Document revision history Date Revision 24-Aug-2007 1 Changes Initial release. ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 13/14 STGW50NC60W ) s ( ct Please Read Carefully: u d o Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. r P e All ST products are sold pursuant to ST’s terms and conditions of sale. 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