STGW60V60F

STGW60V60F Datasheet Trench gate field-stop, 600 V, 60 A, very high speed, V series IGBT in a TO-247 package Features 2 1 3 • Maximum junction temperature: TJ = 175 °C • • Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 60 A • • • Tight parameter distribution Safe paralleling Low thermal resistance TO-247 Applications • • • • • C(2, TAB) G(1) Photovoltaic inverters Uninterruptible power supply Welding Power factor correction Very high frequency converters Description E(3) G1C2TE3 Product status link This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. STGW60V60F Product summary Order code STGW60V60F Marking GW60V60F Package TO-247 Packing Tube DS9699 - Rev 4 - September 2018 For further information contact your local STMicroelectronics sales office. www.st.com STGW60V60F Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Collector-emitter voltage (VGE = 0 V) 600 V Continuous collector current at TC = 25 °C 80(1) Continuous collector current at TC = 100 °C 60 ICP(2) Pulsed collector current 240 A VGE Gate-emitter voltage ±20 V PTOT Total dissipation at TC = 25 °C 375 W TSTG Storage temperature range -55 to 150 °C Operating junction temperature range -55 to 175 °C Value Unit VCES IC TJ Parameter A 1. Current level is limited by bond wires. 2. Pulse width limited by maximum junction temperature and turn-off within RBSOA Table 2. Thermal data Symbol DS9699 - Rev 4 Parameter RthJC Thermal resistance junction-case IGBT 0.4 °C/W RthJA Thermal resistance junction-ambient 50 °C/W page 2/15 STGW60V60F Electrical characteristics 2 Electrical characteristics TJ = 25 °C unless otherwise specified Table 3. Static characteristics Symbol V(BR)CES Parameter Test conditions Collector-emitter breakdown voltage VGE = 0 V, IC = 2 mA Min. VGE = 15 V, IC = 60 A, Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current IGES Gate-emitter leakage current V 2.35 TJ = 175 °C VGE(th) 2.3 2.15 TJ = 125 °C Unit V 1.85 VGE = 15 V, IC = 60 A, VCE(sat) Max. 600 VGE = 15 V, IC = 60 A Collector-emitter saturation voltage Typ. 5.0 6.0 7.0 V VGE = 0 V, VCE = 600 V 25 µA VCE = 0 V, VGE = ±20 V ±250 nA Table 4. Dynamic characteristics Symbol Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 V Min. Typ. Max. Unit - 8000 - pF - 280 - pF - 170 - pF Qg Total gate charge VCC = 480 V, IC = 60 A, - 334 - nC Qge Gate-emitter charge VGE = 0 to 15 V - 130 - nC Qgc Gate-collector charge (see Figure 22. Gate charge test circuit) - 58 - nC Min. Typ. Max. Unit Turn-on delay time - 60 - ns Current rise time - 20 - ns - 2365 - A/μs Table 5. IGBT switching characteristics (inductive load) Symbol td(on) (1) tr (1) (di/dt)on(1) td(off) tf Turn-on current slope Test conditions VCE = 400 V, IC = 60 A, Turn-off delay time RG = 4.7 Ω, VGE = 15 V - 208 - ns Current fall time (see Figure 21. Test circuit for inductive load switching) - 14 - ns - 0.75 - mJ (1) Turn-on switching energy Eoff(2) Turn-off switching energy - 0.55 - mJ Total switching energy - 1.3 - mJ Eon Ets DS9699 - Rev 4 Parameter page 3/15 STGW60V60F Electrical characteristics Symbol td(on)(1) tr(1) Parameter Test conditions Turn-on delay time Typ. Max. Unit - 57 - ns - 23 - ns Turn-on current slope VCE = 400 V, IC = 60 A, - 2191 - A/μs Turn-off delay time RG = 4.7 Ω, VGE = 15 V, - 216 - ns Current fall time TJ = 175 °C - 27 - ns Eon(1) Turn-on switching energy (see Figure 21. Test circuit for inductive load switching) - 1.5 - mJ (2) Turn-off switching energy - 0.8 - mJ Total switching energy - 2.3 - mJ (di/dt)on(1) td(off) tf Eoff Ets Current rise time Min. 1. Switching-on times and energy have been calculated applying the STGW60V60DF's co-pack diode in the high side of the test circuit shown in Figure 21. Test circuit for inductive load switching. Both the IGBT and the diode are at the same temperature. The turn-on switching energies include the reverse recovery of the diode. 2. Including the tail of the collector current. DS9699 - Rev 4 page 4/15 STGW60V60F Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Power dissipation vs case temperature AM17139v1 Ptot (W) Figure 2. Collector current vs case temperature GIPD270820131347FSR IC (A) 80 350 300 250 60 200 40 150 100 20 50 0 0 25 50 75 Figure 3. Output characteristics (TJ = 25°C) AM17141v1 Ic (A) TJ = 25 °C 0 0 100 125 150 175 TC (°C) VGE = 15 V 25 50 75 AM17142v1 TJ = 175 °C VGE = 15 V 200 VGE = 13 V 150 VGE = 11 V 150 VGE = 9 V 100 VGE = 9 V 100 50 DS9699 - Rev 4 TC(°C) IC (A) VGE = 11 V 0 100 125 150 Figure 4. Output characteristics (TJ = 175°C) VGE = 13 V 200 VGE= 15V, T J= 175 °C 50 VGE = 7 V 0 1 2 3 4 VCE (V) 0 VGE = 7 V 0 1 2 3 4 VCE (V) page 5/15 STGW60V60F Electrical characteristics (curves) Figure 5. VCE(sat) vs junction temperature VCE(sat) (V) 3.2 AM17143v1 VGE = 15 V Figure 6. VCE(sat) vs collector current 3.2 IC = 120 A 3.0 3.0 2.8 2.8 2.6 2.6 2.4 TJ = 175 °C TJ = 25 °C 2.2 2.0 2.0 1.8 1.8 1.6 VGE = 15 V 2.4 IC = 60 A 2.2 AM17144v1 VCE (V) IC = 30 A TJ = - 40 °C 1.6 1.4 1.4 1.2 -50 -25 0 25 50 75 100 125 150 175 TJ (ºC) Figure 7. Collector current vs switching frequency AM17145v1 Ic [A] 1.2 10 20 30 40 50 60 70 80 90 100 110 120 IC (A) Figure 8. Forward bias safe operating area AM17146v1 I C (A) tp = 1 μs 110 100 Tc=80°C 100 90 tp = 100 μs Tc=100 °C 80 VCE(sat) limit 10 70 tp = 1 ms 60 50 1 40 30 rectangular current shape, (duty cycle=0.5, VCC = 400V, RG=4.7 Ω, VGE = 0/15 V, TJ =175°C) 20 10 0 1 0.1 f [kHz] 10 Figure 9. Transfer characteristics AM17147v1 IC (A) TJ = 25°C 0.01 (single pulse TC =25 °C, TJ ≤ 175 °C; VGE =15 V) 1 10 VCE (V) 100 Figure 10. Normalized VGE(th) vs junction temperature VGE(th) AM17149v1 (norm.) VCE= VGE IC= 1mA 1.1 200 1.0 150 0.9 100 50 0 DS9699 - Rev 4 0.8 0.7 TJ = -40°C TJ =175°C 6 7 8 9 10 11 VGE (V) 0.6 -50 -25 0 25 50 75 100 125 150 175 TJ (ºC) page 6/15 STGW60V60F Electrical characteristics (curves) Figure 12. Capacitance variation Figure 11. Normalized V(BR)CES vs junction temperature V(BR)CES AM17150v1 (norm.) AM17151v1 C (pF) C ies 10000 IC = 2 mA 1.1 C oes 1000 C res 1.0 100 f = 1MHz, VGE =0 0.9 -50 -25 0 25 50 75 100 125 150 175 TJ (ºC) Figure 13. Gate charge vs gate-emitter voltage AM17152v1 VGE (V) VCC = 480 V, IC = 60 A 14 VCE (V) AM17153v1 VCC 400V, VGE= 15V, Rg=4.7Ω, TJ = 175°C 3500 3000 10 2500 8 EON 2000 6 1500 4 1000 2 E OFF 500 0 100 200 300 Qg (nC) Figure 15. Switching energy vs gate resistance AM17154v1 E (µJ) 4500 4000 0 10 20 30 40 50 60 70 80 90 100 110120 Ic (A) Figure 16. Switching energy vs temperature E (µJ) 1400 1300 AM17155v1 VCC =400V, VGE = 15V, IC = 60 A, Rg = 4.7 Ω 1200 EON 1100 3000 E ON 1000 2500 900 2000 800 EOFF 700 1500 E OFF 600 1000 0 0 1500 VCC=400V, VGE = 15V, IC = 60 A, TJ = 175 °C 3500 DS9699 - Rev 4 10 E (µJ) 4000 12 500 1 Figure 14. Switching energy vs collector current 4500 16 0 10 0.1 500 10 20 30 40 RG (Ω) 400 25 50 75 100 125 150 TJ (ºC) page 7/15 STGW60V60F Electrical characteristics (curves) Figure 17. Switching energy vs collector-emitter voltage AM17156v1 E (µJ) VGE = 15V, TJ = 175°C IC = 60 A, Rg = 4.7 Ω 2000 Figure 18. Switching times vs collector current AM17157v1 t(ns) VCC = 400V, VGE = 15V, Tj =175°C, Rg = 4.7 Ω E ON 1800 tdoff 1600 1400 100 tdon tr 1200 E OFF 1000 800 tf 600 400 150 200 250 300 350 400 450 Vce (V) 10 0 20 AM17159v1 60 80 100 Ic (A) Figure 20. Thermal impedance Figure 19. Switching times vs gate resistance t(ns) 40 K VCC= 400V, VGE = 15V, Tj =175°C Ic = 60 A ZthTO2T_A δ = 0.5 1000 δ = 0.2 t doff δ = 0.02 10 -1 δ = 0.01 t don 100 δ = 0.05 δ = 0.1 tr Single pulse tf 10 DS9699 - Rev 4 0 10 20 30 40 Rg (Ω) 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 tp (s) page 8/15 STGW60V60F Test circuits 3 Test circuits Figure 21. Test circuit for inductive load switching C A Figure 22. Gate charge test circuit A k L=100 µH G E B B RG 3.3 µF C G + k 1000 µF VCC k D.U.T k E k k AM01505v1 AM01504v1 Figure 23. Switching waveform 90% 10% VG 90% VCE 10% Tr(Voff) Tcross 90% IC Td(on) Ton 10% Td(off) Tr(Ion) Tf Toff AM01506v1 DS9699 - Rev 4 page 9/15 STGW60V60F Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DS9699 - Rev 4 page 10/15 STGW60V60F TO-247 package information 4.1 TO-247 package information Figure 24. TO-247 package outline 0075325_9 DS9699 - Rev 4 page 11/15 STGW60V60F TO-247 package information Table 6. TO-247 package mechanical data Dim. mm Min. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 DS9699 - Rev 4 Typ. 5.45 5.60 18.50 ØP 3.55 3.65 ØR 4.50 5.50 S 5.30 5.50 5.70 page 12/15 STGW60V60F Revision history Table 7. Document revision history Date Revision 04-Jun-2013 1 06-Feb-2014 2 Changes First release Updated Figure 1: Internal schematic diagram. Updated title, features and description in cover page. Minor text changes. Modified title, features and internal schematic on cover page. 21-Jun-2017 3 Modified Table 3. Static characteristics and Table 5. IGBT switching characteristics (inductive load). Updated Package information. Minor text changes. 17-Sep-2018 DS9699 - Rev 4 4 Updated Section 2.1 Electrical characteristics (curves). Minor text changes page 13/15 STGW60V60F Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 4.1 TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 DS9699 - Rev 4 page 14/15 STGW60V60F IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS9699 - Rev 4 page 15/15