STGW80V60F

STGFW80V60F, STGW80V60F, STGWT80V60F Trench gate field-stop IGBT, V series 600 V, 80 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C 1 • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 80 A 3 2 • Tight parameters distribution 1 TO-3PF TAB • Safe paralleling • Low thermal resistance 2 3 3 2 1 1 TO-247 TO-3P Figure 1. Internal schematic diagram C (2 or TAB) Applications • Photovoltaic inverters • Uninterruptible power supply • Welding • Power factor correction • Very high frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. G (1) E (3) Table 1. Device summary Order code Marking Package Packaging STGFW80V60F GFW80V60F TO-3PF Tube STGW80V60F GW80V60F TO-247 Tube STGWT80V60F GWT80V60F TO-3P Tube May 2014 This is information on a product in full production. DocID026386 Rev 1 1/19 www.st.com 19 Contents STGFW80V60F, STGW80V60F, STGWT80V60F Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5 2/19 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4.1 TO-3PF, STGFW80V60F . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.2 TO-247, STGW80V60F . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 4.3 TO-3P, STGWT80V60F . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 DocID026386 Rev 1 STGFW80V60F, STGW80V60F, STGWT80V60F 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-247 TO-3PF TO-3P VCES Collector-emitter voltage (VGE = 0) IC Continuous collector current at TC = 25 °C IC 600 V (1) 120 A Continuous collector current at TC = 100 °C 80 A ICP Pulsed collector current 240 A VGE Gate-emitter voltage ±20 V PTOT Total dissipation at TC = 25 °C VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; Tc = 25 °C) TSTG Storage temperature range - 55 to 150 °C Operating junction temperature - 55 to 175 °C (2) TJ 469 79 W 3.5 kV 1. Current level is limited by bond wires. 2. Pulse width limited by maximum junction temperature. Table 3. Thermal data Value Symbol Parameter Unit TO-247 TO-3PF TO-3P RthJC Thermal resistance junction-case RthJA Thermal resistance junction-ambient DocID026386 Rev 1 0.32 1.9 50 °C/W °C/W 3/19 Electrical characteristics 2 STGFW80V60F, STGW80V60F, STGWT80V60F Electrical characteristics TJ = 25 °C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Collector-emitter V(BR)CES breakdown voltage (VGE = 0) IC = 2 mA Min. Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current (VGE = 0) IGES Gate-emitter leakage current (VCE = 0) Unit V 1.85 VGE = 15 V, IC = 80 A Collector-emitter saturation TJ = 125 °C voltage VGE = 15 V, IC = 80 A TJ = 175 °C VGE(th) Max. 600 VGE = 15 V, IC = 80 A VCE(sat) Typ. 2.3 2.15 V 2.4 5 6 7 V VCE = 600 V 100 µA VGE = ± 20 V 250 nA Table 5. Dynamic characteristics Symbol 4/19 Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 VCC = 480 V, IC = 80 A, VGE = 15 V, see Figure 28 Qge Gate-emitter charge Qgc Gate-collector charge DocID026386 Rev 1 Min. Typ. Max. Unit - 10800 - nF - 390 - pF - 220 - pF - 448 - nC - 76 - nC - 184 - nC STGFW80V60F, STGW80V60F, STGWT80V60F Electrical characteristics Table 6. Switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Parameter Test conditions Min. Typ. Max. Unit Turn-on delay time - 60 - ns Current rise time - 30 - ns - 2200 - A/µs - 220 - ns - 17 - ns Turn-on current slope VCE = 400 V, IC = 80 A, RG = 10 Ω, VGE = 15 V, see Figure 27 Turn-off delay time Current fall time Eon(1) Turn-on switching losses - 1.8 - mJ Eoff(2) Turn-off switching losses - 1 - mJ Total switching losses - 2.8 - mJ Turn-on delay time - 60 - ns Current rise time - 30 - ns Turn-on current slope - 2100 - A/µs - 240 - ns - 22 - ns Ets td(on) tr (di/dt)on td(off) tf VCE = 400 V, IC = 80 A, RG = 10 Ω, VGE = 15 V, TJ = 175 °C, see Figure 27 Turn-off delay time Current fall time Eon(1) Turn-on switching losses - 3.8 - mJ Eoff(2) Turn-off switching losses - 1.25 - mJ Total switching losses - 5.05 - mJ Ets 1. Energy loss include reverse recovery of the external diode. The diode is the same of the co-packed STGW80V60DF 2. Turn-off losses include also the tail of the collector current. DocID026386 Rev 1 5/19 Electrical characteristics 2.1 STGFW80V60F, STGW80V60F, STGWT80V60F Electrical characteristics (curves) Figure 2. Power dissipation vs. case temperature for TO-247 and TO-3P GIPD041120131017FSR Ptot (W) Figure 3. Collector current vs. case temperature for TO-247 and TO-3P GIPD011020131024FSR IC (A) VGE ≥ 15V, TJ ≤ 175 °C VGE ≥ 15V, TJ ≤ 175 °C 400 120 300 90 200 60 100 30 0 0 25 50 75 Figure 4. Power dissipation vs. case temperature for TO-3PF *,3*)65 3WRW :  0 0 100 125 150 175 TC(°C) 9*(•97 -”ƒ&                 GIPD041120131118FSR IC (A) 11V VGE=15V    7&ƒ& Figure 6. Output characteristics (TJ = 25°C) 9V 100 125 150 175 TC(°C) *,3*)65 ,& $    75 Figure 5. Collector current vs. case temperature for TO-3PF    50 25 9*(•97 -”ƒ&       7&ƒ& Figure 7. Output characteristics (TJ = 175°C) GIPD281020131423FSR IC (A) VGE=15V 120 120 80 80 40 40 13V 11V 9V 7V 0 0 6/19 1 2 3 4 VCE(V) DocID026386 Rev 1 0 0 1 2 3 4 VCE(V) STGFW80V60F, STGW80V60F, STGWT80V60F Figure 8. VCE(sat) vs. junction temperature GIPD041120131129FSR VCE(sat) (V) IC= 160A Electrical characteristics Figure 9. VCE(sat) vs. collector current VGE= 15V VGE= 15V 3.5 GIPD041120131136FSR VCE(sat) (V) TJ= 175°C 3.5 3 3 IC= 80A 2.5 2.5 2 2 1.5 1 -50 1.5 IC= 40A 0 50 100 150 1 20 TJ(°C) Figure 10. Collector current vs. switching frequency for TO-247 and TO-3P GIPD041120131144FSR Ic [A] TJ= 25°C TJ= -40°C 40 60 80 100 120 140 IC(A) Figure 11. Collector current vs. switching frequency for TO-3PF *,3*)65 ,F>$@  160 7F ƒ& Tc=80°C  120 7F  ƒ& Tc=100 °C  80 40  rectangular current shape, (duty cycle=0.5, VCC = 400V, RG=10 Ω , VGE = 0/15 V, TJ =175°C) 0 1   f [kHz] 10 UHFWDQJXODUFXUUHQWVKDSH GXW\F\FOH 9&& 95*  Ÿ 9*( 97- ƒ& I>N+]@  Figure 12. Forward bias safe operating area for Figure 13. Forward bias safe operating area for TO-247 and TO-3P TO-3PF GIPD041120131152FSR IC (A) *,3*)65 ,& $  100 10 μs 10 Single pulse Tc= 25°C, TJ