STGW30NC60VD

STGW30NC60VD Datasheet 40 A, 600 V, fast IGBT with UltraFAST diode Features • • • High current capability High frequency operation up to 50 kHz Very soft ultra fast recovery antiparallel diode Applications TO-247 long leads • • • High frequency inverters, UPS Motor drive SMPS and PFC in both hard switch and resonant topologies Description This device uses the advanced PowerMESH process resulting in an excellent tradeoff between switching performance and low on-state behavior. SC12850_DIODE_IGBT Product status link STGW30NC60VD Product summary Order code STGW30NC60VD Marking GW30NC60VD Package TO-247 long leads Packing Tube DS5126 - Rev 6 - May 2022 For further information contact your local STMicroelectronics sales office. www.st.com STGW30NC60VD Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Collector-emitter voltage (VGE = 0 V) 600 V Continuous collector current at TC = 25 °C 80 Continuous collector current at TC = 100 °C 40 ICL(2) Turn-off latching current 100 A ICP(3) Pulsed collector current 150 A VGE Gate-emitter voltage ±20 V Diode RMS forward current at TC = 25 °C 30 A IFSM Surge not repetitive forward current, tP = 10 ms sinusoidal 120 A PTOT Total power dissipation at TC = 25 °C 250 W TJ Operating junction temperature range VCES IC(1) IF TSTG 1. Parameter -55 to 150 Storage temperature range Calculated according to the iterative formula: IC TC = A °C °C T J max − TC Rtℎj − C × VCE sat max T J max , IC TC 2. Vclamp = 80% VCES, TJ =150 °C, RG = 10 Ω, VGE = 15 V. 3. Pulse width limited by maximum junction temperature and turn-off within RBSOA. Table 2. Thermal data Symbol RthJC RthJA DS5126 - Rev 6 Parameter Value Unit Thermal resistance, junction-to-case IGBT 0.5 °C/W Thermal resistance, junction-to-case diode 1.5 °C/W Thermal resistance, junction-to-ambient 50 °C/W page 2/14 STGW30NC60VD Electrical characteristics 2 Electrical characteristics TJ = 25 °C unless otherwise specified Table 3. Static Symbol V(BR)CES VCE(sat) Parameter Collector-emitter breakdown voltage Collector-emitter saturation voltage Test conditions VGE = 0 V, IC = 1 mA Typ. VGE = 15 V, IC = 40 A 2.1 VGE = 15 V, IC = 80 A, TJ= 100 °C 2.9 VGE = 15 V, IC = 20 A, TJ= 125 °C 1.7 VCE = VGE, IC = 250 μA ICES Collector cut-off current IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V Forward transconductance VCE = 15 V, IC = 20 A Unit V 1.8 Gate threshold voltage Max. 600 VGE = 15 V, IC = 20 A VGE(th) gfs Min. 3.75 2.5 V 5.75 V VGE = 0 V, VCE = 600 V 10 µA VGE = 0 V, VCE = 600 V, TJ = 125 °C (1) 1 mA ±100 nA 15 S 1. Specified by design, not tested in production. Table 4. Dynamic Symbol DS5126 - Rev 6 Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Qge Gate-emitter charge Qgc Gate-collector charge Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 V VCE = 390 V, IC = 20 A, VGE = 15 V (see Figure 17. Gate charge test circuit) Min. Typ. - 2200 - 225 - 50 - 100 - 16 - 45 Max. Unit pF 140 nC page 3/14 STGW30NC60VD Electrical characteristics Table 5. Switching on/off (inductive load) Symbol td(on) Parameter Test conditions Min. Typ. Max. Unit Turn-on delay time VCC = 390 V, IC = 20 A, - 31 - ns Current rise time RG = 3.3 Ω, VGE = 15 V - 11 - ns Turn-on current slope (see Figure 16. Test circuit for inductive load switching and Figure 18. Switching waveform) - 1600 - A/μs Turn-on delay time VCC = 390 V, IC = 20 A, - 31 - ns Current rise time RG = 3.3 Ω, VGE = 15 V, TJ = 125 °C - 11.5 - ns Turn-on current slope (see Figure 16. Test circuit for inductive load switching and Figure 18. Switching waveform) - 1500 - A/μs tr(Voff) Off voltage rise time VCC = 390 V, IC = 20 A, - 28 - ns td(off) Turn-off delay time RG = 3.3 Ω, VGE = 15 V - 100 - ns Current fall time (see Figure 16. Test circuit for inductive load switching and Figure 18. Switching waveform) - 75 - ns tr(Voff) Off voltage rise time VCC = 390 V, IC = 20 A, - 66 - ns td(off) Turn-off delay time RG = 3.3 Ω, VGE = 15 V, TJ = 125 °C - 150 - ns Current fall time (see Figure 16. Test circuit for inductive load switching and Figure 18. Switching waveform) - 130 - ns Min. Typ. Max. Unit tr (di/dt)on td(on) tr (di/dt)on tf tf Table 6. Switching energy (inductive load) Symbol Parameter Test conditions Eon Turn-on switching energy VCC = 390 V, IC = 20 A, - 220 300 μJ Eoff(1) Turn-off switching energy RG = 3.3 Ω, VGE = 15 V - 330 450 μJ Ets Total switching energy (see Figure 16. Test circuit for inductive load switching) - 550 750 μJ Eon Turn-on switching energy VCC = 390 V, IC = 20 A, - 450 μJ Eoff(1) Turn-off switching energy RG = 3.3 Ω, VGE = 15 V, TJ = 125 °C - 770 μJ Total switching energy (see Figure 16. Test circuit for inductive load switching) - 1220 μJ Ets 1. Including the tail of the collector current. DS5126 - Rev 6 page 4/14 STGW30NC60VD Electrical characteristics Table 7. Collector-emitter diode Symbol DS5126 - Rev 6 Parameter VF Forward on-voltage trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current Test conditions Min. Typ. Max. Unit IF = 20 A - 1.8 2.3 V IF = 20 A, TJ = 125 °C - 1.4 V - 44 ns - 66 nC - 3 A - 88 ns - 237 nC - 5.4 A IF = 20 A, VR = 40 V, TJ = 25 °C, di/dt =100 A/μs (see Figure 19. Diode reverse recovery waveform) IF = 20 A, VR = 40 V, TJ = 125 °C, di/dt =100 A/μs (see Figure 19. Diode reverse recovery waveform) page 5/14 STGW30NC60VD Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Output characteristics Figure 2. Transfer characteristics Figure 3. Transconductance Figure 4. Collector-emitter on voltage vs temperature Figure 5. Gate charge vs gate-source voltage Figure 6. Capacitance variations DS5126 - Rev 6 page 6/14 STGW30NC60VD Electrical characteristics (curves) Figure 7. Normalized gate threshold voltage vs temperature Figure 8. Collector-emitter on voltage vs collector current Figure 9. Normalized breakdown voltage vs temperature Figure 10. Switching energy vs temperature Figure 11. Switching energy vs gate resistance Figure 12. Switching energy vs collector current DS5126 - Rev 6 page 7/14 STGW30NC60VD Electrical characteristics (curves) Figure 13. Turn-off SOA Figure 14. Thermal Impedance GC18460 Figure 15. Emitter-collector diode characteristics AM06103v1 I F (A) 80 TJ = 125 °C (maximum values) 60 TJ = 125 °C (typical values) 40 TJ = 25 °C (maximum values) 20 0 0 DS5126 - Rev 6 0.5 1 1.5 2 2.5 3 3.5 4 VF (V) page 8/14 STGW30NC60VD Test circuits 3 Test circuits Figure 16. Test circuit for inductive load switching C A Figure 17. Gate charge test circuit A k L=100 µH G E B B 3.3 µF C G + k RG 1000 µF VCC k D.U.T k E k k AM01505v1 AM01504v1 Figure 18. Switching waveform Figure 19. Diode reverse recovery waveform 90% 10% VG 90% VCE 10% tr(Voff) tcross 25 90% IC td(on) ton td(off) tr(Ion) 10% tf toff AM01506v1 DS5126 - Rev 6 page 9/14 STGW30NC60VD Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 TO-247 long leads package information Figure 20. TO-247 long leads package outline 8463846_3 DS5126 - Rev 6 page 10/14 STGW30NC60VD TO-247 long leads package information Table 8. TO-247 long leads package mechanical data Dim. mm Min. Typ. Max. A 4.90 5.00 5.10 A1 2.31 2.41 2.51 A2 1.90 2.00 2.10 b 1.16 1.26 b2 3.25 b3 2.25 c 0.59 0.66 D 20.90 21.00 21.10 E 15.70 15.80 15.90 E2 4.90 5.00 5.10 E3 2.40 2.50 2.60 e 5.34 5.44 5.54 L 19.80 19.92 20.10 L1 P 3.50 Q 5.60 S 6.05 aaa DS5126 - Rev 6 4.30 3.60 3.70 6.00 6.15 6.25 0.04 0.10 page 11/14 STGW30NC60VD Revision history Table 9. Document revision history Date Version Changes 12-Feb-2007 1 First release. 19-Feb-2007 2 Figure 6 has been updated 12-Mar-2010 3 03-Jan-2011 4 Updated Table 4: Static, Table 8: Collector-emitter diode and Figure 14: Thermal impedance. 23-Feb-2011 5 Added TL row Table 2 on page 3. 02-May-2022 6 Inserted IFSM parameter on Table 2: Absolute maximum ratings. DS5126 - Rev 6 Updated Figure 16: Emitter-collector diode characteristics and package mechanical data. Updated Section 4.1 TO-247 long leads package information. Minor text changes. page 12/14 STGW30NC60VD Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 4.1 TO-247 long leads package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 DS5126 - Rev 6 page 13/14 STGW30NC60VD IMPORTANT NOTICE – READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2022 STMicroelectronics – All rights reserved DS5126 - Rev 6 page 14/14