STH13009
High voltage fast-switching NPN power transistor
Preliminary data
Features
.
■
High voltage capability
■
Low spread of dynamic parameters
■
Very high switching speed
Applications
■
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Switching mode power supplies
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1
2
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TO-220
Description
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds anh high voltage capability.
It uses a Hollow Emitter structure to enhance
switching speeds.
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Figure 1.
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Internal schematic diagram
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Table 1.
Device summary
Order code
Marking
Package
Packaging
STH13009
H13009
TO-220
Tube
October 2007
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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Absolute maximum ratings
1
STH13009
Absolute maximum ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Collector-emitter voltage (VBE = -1.5V)
700
V
VCEO
Collector-emitter voltage (IB = 0)
400
V
VEBO
Emitter-base voltage (IC = 0)
12
V
Collector current
12
A
Collector peak current (tp < ms)
24
Base current
6
Base peak current (tp < ms)
12
ICM
IB
IBM
PTOT
Total dissipation at Tcase = 25°C
Tstg
Storage temperature
TJ
Thermal data
Symbol
Rthj-case
Thermal resistance junction-case
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Parameters
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Max. operating junction temperature
Table 3.
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Unit
VCEV
IC
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Value
A
A
A
100
W
-65 to 150
°C
150
°C
Value
Unit
1.25
°C/W
STH13009
2
Electrical characteristics
Electrical characteristics
(Tcase = 25°C; unless otherwise specified)
Table 4.
Electrical characteristics
Symbol
ICEV
IEBO
Parameter
Test conditions
Collector cut-off current
VCE = 700 V
(V BE = -1.5V)
VCE = 700 V
Emitter cut-off current
(IC = 0)
VEB = 10 V
Collector-emitter
VCEO(sus)(1) sustaining voltage
(IB = 0)
VCE(sat)(1)
IC = 4 A __
IB = 0.8 A
IC = 5 A __
IB = 1 A
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IC = 8 A __
hFE(1)
ts
tf
Base-emitter saturation
voltage
DC current gain
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IC = 8 A __
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Inductive load
Storage time
Fall time
bs
IC = 5 A __
IB = 1.6 A
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Pr
IB = 2.4 A
IB = 1.6 A
IC = 5 A
_ VCE =5 V
18
_ VCE =5 V
11
VCC = 250 V
IB1= 1 A
L = 200 µH
0.2
0.25
0.35
0.6
IB = 1 A
IC = 8 A
IC = 5A
IB2 = -2 A
Max.
Unit
10
500
µA
10
µA
µA
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400
IC = 12 A _
VBE(sat)(1)
Typ.
TC = 100°C
IC = 10 mA
Collector-emitter
saturation voltage
Min.
V
0.5
0.6
1
2
V
V
V
V
1.2
1.6
V
V
30
23
1.7
100
2.5
140
µs
ns
1. Pulsed duration = 300 ms, duty cycle ≥1.5%.
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Electrical characteristics
2.1
STH13009
Electrical characteristic (curves)
Figure 2.
Safe operating area
Figure 3.
Derating curve
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Figure 4.
DC current gain
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Figure 5.
DC current gain
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Figure 6.
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Collector-emitter saturation
voltage
Figure 7.
Base-emitter saturation
voltage
STH13009
Electrical characteristics
Figure 8.
2.2
Inductive load switching time Figure 9.
Reverse biased safe
operating area
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Test circuit
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Figure 10. Inductive load switching test circuit
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1) Fast electronic switch
2) Non-inductive resistor
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Package mechanical data
3
STH13009
Package mechanical data
In order to meet environmental requirements, ST offers these devices in
ECOPACK® packages. These packages have a Lead-free second level
interconnect . The category of second level interconnect is marked on the
package and on the inner box label, in compliance with JEDEC Standard JESD97.
The maximum ratings related to soldering conditions are also marked on the inner
box label. ECOPACK is an ST trademark. ECOPACK specifications are available
at: www.st.com
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STH13009
Package mechanical data
TO-220 Mechanical data
mm.
DIM.
MIN.
TYP
MAX.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.70
c
0.49
0.70
D
15.25
15.75
D1
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1.27
E
10
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2.40
e1
4.95
F
1.23
H1
6.20
J1
2.40
L
13
L1
3.50
10.40
2.70
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5.15
L20
16.40
L30
28.90
øP
3.75
Q
2.65
bs
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1.32
6.60
2.72
14
3.93
3.85
2.95
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Revision history
STH13009
4
Revision history
Table 5.
Document revision history
Date
Revision
15-Oct-2007
1
Changes
Initial Release
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STH13009
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