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STL40N75LF3

STL40N75LF3

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    PowerVDFN8

  • 描述:

    MOSFET N CH 75V 40A PWRFLT 5X6

  • 数据手册
  • 价格&库存
STL40N75LF3 数据手册
STL40N75LF3 N-channel 75 V, 16 mΩ typ., 10 A STripFET™ III Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Features 1 Order code VDSS RDS(on) max. ID STL40N75LF3 75 V 19 mΩ 10 A 2 3 4 • N-channel enhancement mode • Low gate charge PowerFLAT™ 5x6 • Low threshold voltage device Applications Figure 1. Internal schematic diagram D(5, 6, 7, 8) 8 7 • Switching applications 5 6 Description This device is an N-channel enhancement mode Power MOSFET produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize onresistance and gate charge to provide superior switching performance. G(4) 1 2 3 4 Top View S(1, 2, 3) AM15540v2 Table 1. Device summary Order code Marking Package Packaging STL40N75LF3 40N75LF3 PowerFLAT™ 5x6 Tape and reel February 2014 This is information on a product in full production. DocID023810 Rev 2 1/14 www.st.com Contents STL40N75LF3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 .............................................. 8 DocID023810 Rev 2 STL40N75LF3 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 75 V VGS Gate-source voltage +20\-16 V ID(1) Drain current (continuous) at TC = 25 °C 40 A ID (1) Drain current (continuous) at TC = 100 °C 26 A IDM(1)(2) Drain current (pulsed) 160 A ID(3) Drain current (continuous) at Tpcb = 25 °C 10 A (3) Drain current (continuous) at Tpcb=100 °C 6 A Total dissipation at TC = 25 °C 75 W Total dissipation at Tpcb = 25 °C 4.8 W Operating junction temperature Storage temperature -55 to 175 °C Value Unit 2 °C/W 31.3 °C/W ID PTOT (1) PTOT (3) TJ Tstg 1. The value is rated according to Rthj-case 2. Pulse width limited by safe operating area 3. The value is rated according to Rthj-pcb Table 3. Thermal resistance Symbol Parameter Rthj-case Thermal resistance junction-case Rthj-pcb (1) Thermal resistance junction-ambient 1. When mounted on FR-4 board of 1 inch², 2oz Cu., t < 10 sec. DocID023810 Rev 2 3/14 14 Electrical characteristics 2 STL40N75LF3 Electrical characteristics (TCASE = 25 °C unless otherwise specified). Table 4. On/off states Symbol Parameter Test conditions Drain-source breakdown voltage (VGS= 0) ID = 250 µA IDSS Zero gate voltage drain current (VGS = 0) VDS = 75 V, VDS = 75 V, TC = 125 °C IGSS Gate body leakage current (VDS = 0) VGS = +20 / -16 V VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS= 10 V, ID= 20 A VGS= 5 V, ID= 20 A V(BR)DSS Min. Typ. Max. 75 Unit V 1 10 µA µA ±100 nA 1 V 16 18.7 19 22 mΩ mΩ Table 5. Dynamic Symbol Parameter Test conditions Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance Qg Qgs Qgd RG Min. Typ. Max. Unit VDS = 25 V, f = 1 MHz, VGS = 0 - 1300 228 15 - pF pF pF Total gate charge Gate-source charge Gate-drain charge VDD = 37.5 V, ID = 40 A VGS = 5 V (see Figure 14) - 12 5 5.3 - nC nC nC Gate input resistance f=1 MHz gate DC bias=0 Test signal level = 20 mV open drain - 3.5 - Ω Table 6. Switching times Symbol td(on) tr td(off) tf 4/14 Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD= 37.5 V, ID= 20 A, RG= 4.7 Ω, VGS=10 V (see Figure 13) DocID023810 Rev 2 Min. Typ. - 12 25 25 3 Max. Unit - ns ns ns ns STL40N75LF3 Electrical characteristics Table 7. Source-drain diode Symbol ISD ISDM (1) VSD(2) trr Qrr IRRM Parameter Test conditions Min Typ. Source-drain current Max Unit 40 A 160 A 1.1 V Source-drain current (pulsed) Forward on voltage ISD = 40 A, VGS=0 - Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 40 A, di/dt = 100 A/µs, VDD=60 V - 35 44 27 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% DocID023810 Rev 2 5/14 14 Electrical characteristics 2.1 STL40N75LF3 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance AM15409v1 ID (A) 100 10 GIPD130920131022FSR K δ= 0.5 0.2 s ai are ) his DS(on t n R n i ax m tio era d by p O ite Lim 0.1 10-2 0.05 0.02 10ms 10-3 0.01 1 100ms Tj= 175°C Tc=25°C 0.1 10 Single pulse 1s Single pulse 10-5 -6 10 0.01 10 1 0.1 -4 VDS(V) Figure 4. Output characteristics -5 10 -4 10 -3 10-2 10-1 100 tp(s) Figure 5. Transfer characteristics AM15410v1 ID (A) 10 VGS= 10 V AM15411v1 ID (A) VDS = 4 V 100 100 80 80 VGS= 5 V 60 60 VGS= 4 V 40 40 20 20 VGS= 3 V 0 0 2 1 0 3 VDS(V) Figure 6. Gate charge vs gate-source voltage AM15412v1 VGS (V) VDD=37.5 V 10 0 1 2 3 4 5 6 7 8 VGS(V) Figure 7. Static drain-source on-resistance AM15413v1 RDS(on) (mΩ) VGS=10V 30 ID=40A 25 8 20 6 15 4 10 2 5 0 0 6/14 5 10 15 20 25 Qg(nC) 0 0 DocID023810 Rev 2 10 20 30 40 ID(A) STL40N75LF3 Electrical characteristics Figure 8. Capacitance variations Figure 9. Normalized V(BR)DSS vs temperature AM15414v1 C (pF) 3500 AM15415v1 V(BR)DSS (norm) 1.15 ID = 1mA 3000 1.1 2500 1.05 2000 1 0.95 1500 Ciss 0.9 1000 0.85 500 0 0 10 20 30 Coss Crss VDS(V) 40 Figure 10. Normalized gate threshold voltage vs temperature AM15344v1 VGS(th) (norm) 0.8 -55 -30 -5 20 45 70 95 120 TJ(°C) Figure 11. Normalized on-resistance vs temperature AM15417v1 RDS(on) (norm) 1.2 2 ID=250 µA VGS=5 V ID=20 A 1 1.5 0.8 1 0.6 0.5 0.4 0.2 -55 -30 -5 20 45 70 95 120 TJ(°C) 0 -55 -30 -5 20 45 70 95 120 ID(A) Figure 12. Source-drain diode forward characteristics AM15418v1 VSD (V) TJ=-50°C 1 0.9 TJ=25°C 0.8 0.7 TJ=175°C 0.6 0.5 0.4 0 10 20 30 40 ISD(A) DocID023810 Rev 2 7/14 14 Test circuits 3 STL40N75LF3 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 16. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/14 0 DocID023810 Rev 2 10% AM01473v1 STL40N75LF3 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Figure 19. PowerFLAT™ 5x6 type S-C drawings 8231817_H_C DocID023810 Rev 2 9/14 14 Package mechanical data STL40N75LF3 Table 8. PowerFLAT™ 5x6 type S-C mechanical data mm Dim. Min. Typ. Max. A 0.80 1.00 A1 0.02 0.05 A2 b 0.25 0.30 0.50 D 5.20 E 6.15 D2 4.11 4.31 E2 3.50 3.70 e 1.27 e1 0.65 L 0.715 1.015 K 1.05 1.35 Figure 20. PowerFLAT™ 5x6 type S-C recommended footprint (dimensions in mm) Footprint 10/14 DocID023810 Rev 2 STL40N75LF3 Packaging information Figure 21. PowerFLAT™ 5x6 type S-C tape P0 4.0±0.1 (II) P2 2.0±0.1 (I) T (0.30 ±0.05) E1 1.75±0.1 Y F(5.50±0.1)(III) C L R EF D1 Ø1.5 MIN. REF .R0 W(12.00±0.3) 0. 20 Do Ø1.55±0.05 Bo (5.30±0.1) 5 Packaging information .50 Y P1(8.00±0.1) Ao(6.30±0.1) Ko (1.20±0.1) SECTION Y-Y (I) Measured from centerline of sprocket hole to centerline of pocket. Base and bulk quantity 3000 pcs (II) Cumulative tolerance of 10 sprocket holes is ± 0.20 . (III) Measured from centerline of sprocket hole to centerline of pocket. 8234350_Tape_rev_C Figure 22. PowerFLAT™ 5x6 type S-C package orientation in carrier tape Pin 1 identification DocID023810 Rev 2 11/14 14 Packaging information STL40N75LF3 Figure 23. PowerFLAT™ 5x6 type S-C reel R0.60 W3 11.9/15.4 PART NO. 1.90 2.50 R25.00 ØN 178(±2.0) ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES W2 18.4 (max) A 330 (+0/-4.0) 4.00 2.50 77 ESD LOGO W1 12.4 (+2/-0) 06 PS ØA 1 28 2.20 R1.10 Ø21.2 All dimensions are in millimeters 13.00 8234350_Reel_rev_C CORE DETAIL 12/14 DocID023810 Rev 2 STL40N75LF3 6 Revision history Revision history Table 9. Document revision history Date Revision 19-Oct-2012 1 First release. 2 Deleted note in the table of Features. Updated Figure 1. Updated values of PTOT , TJ and Tstg in Table 2. Updated notes in Table 2. Updated VGS test condition inTable 5. Updated VDD test condition inTable 6. Removed Tj test condition from Table 7. Updated Figure 2, Figure 4, Figure 6, Figure 9 and Figure 11. Updated mechanical data. 24-Feb-2014 Changes DocID023810 Rev 2 13/14 14 STL40N75LF3 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. ST PRODUCTS ARE NOT DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B) AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER’S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR “AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL” INDUSTRY DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2014 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 14/14 DocID023810 Rev 2
STL40N75LF3 价格&库存

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STL40N75LF3
  •  国内价格 香港价格
  • 3000+6.079993000+0.73625
  • 6000+6.051586000+0.73281

库存:3000