STL6NK55Z

N-CHANNEL 550V - 1.2Ω - 5.2A PowerFLAT™ Zener-Protected SuperMESH™Power MOSFET TYPE STL6NK55Z s s s s s s s STL6NK55Z VDSS 550 V RDS(on) < 1.4 Ω ID (1) 5.2 A Pw (1) 75 W TYPICAL RDS(on) = 1.2 Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY 100% AVALANCHE RATED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY PowerFLAT™(5x5) (Chip Scale Package) DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s LIGHTING s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC ORDERING INFORMATION SALES TYPE STL6NK55Z MARKING L6NK55Z PACKAGE PowerFLAT™ (5x5) PACKAGING TAPE & REEL July 2002 1/8 STL6NK55Z ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID (2) IDM (2) PTOT (2) PTOT (1) VESD(G-S) dv/dt (4) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C (Steady State) Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C (Steady State) Total Dissipation at TC = 25°C (Steady State) Derating Factor (2) Gate source ESD(HBM-C=100pF, R=1.5KΩ) Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 550 550 ± 30 0.86 0.54 3.44 2.5 75 0.02 3000 4.5 –55 to 150 Unit V V V A A A W W W/°C V/ns V/ns °C THERMAL DATA Symbol Rthj-F Note: 1. 2. 3. 4. Parameter Thermal Resistance Junction-Foot (Drain) Max. 1.67 50 Unit °C/W °C/W Rthj-amb (2) Thermal Resistance Junction-ambient The value is rated according to Rthj-F. When Mounted on FR-4 Board of 1inch2, 2 oz Cu Pulse width limited by safe operating area ISD