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STP23NM60ND

STP23NM60ND

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    SOT78,TO220AB,SC46

  • 描述:

    MOSFET N-CH 600V 19.5A TO-220

  • 数据手册
  • 价格&库存
STP23NM60ND 数据手册
STx23NM60ND N-channel 600 V, 0.150 Ω 19.5 A, FDmesh™ II Power MOSFET , (with fast diode) D²PAK, I²PAK, TO-220, TO-220FP, TO-247 Features Type STx23NM60ND ■ ■ ■ ■ ■ VDSS (@Tjmax) 650 V RDS(on) max. < 0.180 Ω ID 1 3 3 12 19.5 A D²PAK 2 1 3 I²PAK The worldwide best RDS(on) * area amongst the fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge 1 3 2 TO-247 3 1 2 Low gate input resistance High dv/dt and avalanche capabilities TO-220 TO-220FP Application Switching applications Figure 1. Internal schematic diagram Description The device is an N-channel FDmesh™ II Power MOSFET that belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced onresistance and fast switching with a n intrinsic fast-recovery body diode.It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. Table 1. Device summary Part number STB23NM60ND STI23NM60ND STF23NM60ND STP23NM60ND STW23NM60ND Marking 23NM60ND 23NM60ND 23NM60ND 23NM60ND 23NM60ND Package D²PAK I²PAK TO-220FP TO-220 TO-247 Packaging Tape and reel Tube Tube Tube Tube October 2010 Doc ID 14367 Rev 3 1/18 www.st.com 18 Contents STB/I/F/P/W23NM60ND Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 6 Test circuits .............................................. 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/18 Doc ID 14367 Rev 3 STB/I/F/P/W23NM60ND Electrical ratings 1 Electrical ratings Table 2. Symbol Absolute maximum ratings Value Parameter D²PAK, I²PAK TO-220, TO-247 600 ± 25 19.5 11.7 78 150 40 2500 -55 to 150 150 19.5 (1) Unit TO-220FP V V A A A W V/ns V °C °C VDS VGS ID ID IDM (2) Drain-source voltage (VGS=0) Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) Storage temperature Max. operating junction temperature 11.7 (1) 78 (1) PTOT dv/dt (3) 35 VISO Tstg Tj 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 19.5 A, di/dt ≤ 600 A/µs, VDD =80% V(BR)DSS Table 3. Symbol Rthj-case Rthj-amb Tl Thermal data Parameter Thermal resistance junctioncase max Thermal resistance junctionamb max Maximum lead temperature for soldering purposes D²PAK I²PAK TO-220 TO-247 TO-220FP 0.83 62.5 300 50 3.6 62.5 Unit °C/W °C/W °C Table 4. Symbol IAS EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj= 25 °C, ID = IAS, VDD = 50 V) Max value 9 700 Unit A mJ Doc ID 14367 Rev 3 3/18 Electrical characteristics STB/I/F/P/W23NM60ND 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. Symbol V(BR)DSS dv/dt(1) IDSS IGSS VGS(th) RDS(on) 1. On/off states Parameter Drain-source breakdown voltage Drain-source voltage slope Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1 mA, VGS= 0 VDD = 480 V, ID = 19.5 A, VGS = 10 V VDS = Max rating, VDS = Max rating,@125 °C VGS = ±20 V VDS= VGS, ID = 250 µA VGS= 10 V, ID= 10 A 3 4 Min. 600 30 1 100 100 5 Typ. Max. Unit V V/ns µA µA nA V Ω 0.150 0.180 Characteristic value at turn off on inductive load Table 6. Symbol gfs(1) Ciss Coss Crss Coss eq.(2) Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Gate input resistance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS =15 V, ID= 10 A VDS = 50 V, f =1 MHz, VGS = 0 Min. Typ. 17 2050 80 8 318 Max. Unit S pF pF pF pF - - VGS = 0, VDS = 0 to 480 V f=1 MHz Gate DC Bias=0 Test signal level=20 mV open drain VDD = 480 V, ID = 19.5 A VGS = 10 V (see Figure 19) - - Rg Qg Qgs Qgd 1. - 4 70 10 30 - Ω nC nC nC - - Pulsed: pulse duration = 300 µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/18 Doc ID 14367 Rev 3 STB/I/F/P/W23NM60ND Electrical characteristics Table 7. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 300 V, ID = 10 A, RG = 4.7 Ω, VGS = 10 V (see Figure 18) Min. Typ. 25 45 90 40 Max. Unit ns ns ns ns - - Table 8. Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 19.5 A, VGS=0 ISD = 19.5 A, di/dt =100 A/µs, VDD = 100 V (see Figure 20) VDD = 100 V di/dt =100 A/µs, ISD = 19.5 A Tj = 150 °C (see Figure 20) Test conditions Min. 190 1.2 13 260 2.0 15 Typ. Max. Unit 19.5 78 1.3 A A V ns µC A ns µC A - 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% Doc ID 14367 Rev 3 5/18 Electrical characteristics STB/I/F/P/W23NM60ND 2.1 Figure 2. Electrical characteristics (curves) Safe operating area for TO-220, D2PAK, I2PAK Figure 3. Thermal impedance for TO-220, D2PAK, I2PAK Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 6/18 Doc ID 14367 Rev 3 STB/I/F/P/W23NM60ND Figure 8. Output characteristics Figure 9. Electrical characteristics Transfer characteristics Figure 10. Transconductance Figure 11. Static drain-source on resistance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations VGS (V) 12 10 Ciss 8 6 100 4 2 0 0 20 10 Crss Coss 1000 AM01537v1 VDD=480V VGS=10V ID=19.5A C (pF) 10000 AM01538v1 40 60 80 Qg(nC) 1 0.1 1 10 100 VDS(V) Doc ID 14367 Rev 3 7/18 Electrical characteristics Figure 14. Normalized gate threshold voltage vs temperature STB/I/F/P/W23NM60ND Figure 15. Normalized on resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Normalized BVDSS vs temperature 8/18 Doc ID 14367 Rev 3 STB/I/F/P/W23NM60ND Test circuits 3 Test circuits Figure 19. Gate charge test circuit VDD 12V 2200 Figure 18. Switching times test circuit for resistive load 47kΩ 100nF 1kΩ RL VGS VD RG PW D.U.T. μF 3.3 μF VDD Vi=20V=VGMAX 2200 μF IG=CONST 2.7kΩ 47kΩ PW 1kΩ 100Ω D.U.T. VG AM01468v1 AM01469v1 Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test switching and diode recovery times circuit A D G S B 25 Ω D.U.T. A FAST DIODE B A L=100μH B D G 3.3 μF 1000 μF L VD 2200 μF 3.3 μF VDD VDD ID RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 22. Unclamped inductive waveform V(BR)DSS VD Figure 23. Switching time waveform ton tdon tr toff tdoff tf 90% IDM 90% 10% ID VDD VDD 0 10% VDS 90% VGS AM01472v1 0 10% AM01473v1 Doc ID 14367 Rev 3 9/18 Package mechanical data STB/I/F/P/W23NM60ND 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/18 Doc ID 14367 Rev 3 STB/I/F/P/W23NM60ND Package mechanical data Table 9. Dim. TO-220FP mechanical data mm Min. Typ. Max. 4.6 2.7 2.75 0.7 1 1.70 1.70 5.2 2.7 10.4 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 Figure 24. TO-220FP drawing L7 E A B D Dia L6 L5 F1 F2 F H G1 G L2 L3 L4 7012510_Rev_K Doc ID 14367 Rev 3 11/18 Package mechanical data STB/I/F/P/W23NM60ND TO-220 type A mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q 4.40 0.61 1.14 0.48 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 Typ Max 4.60 0.88 1.70 0.70 15.75 0015988_Rev_S 12/18 Doc ID 14367 Rev 3 STB/I/F/P/W23NM60ND Package mechanical data TO-247 Mechanical data mm. Min. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 14.80 4.30 Typ Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 Dim. A A1 b b1 b2 c D E e L L1 L2 øP øR S Doc ID 14367 Rev 3 13/18 Package mechanical data STB/I/F/P/W23NM60ND D²PAK (TO-263) mechanical data mm. Dim. Min. A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 2.54 4.88 15 2.49 2.29 1.27 1.30 0.4 0° 8° 5.28 15.85 2.69 2.79 1.40 1.75 Typ. Max. 4.60 0.23 0.93 1.70 0.60 1.36 9.35 10.40 0079457_P 14/18 Doc ID 14367 Rev 3 STB/I/F/P/W23NM60ND Package mechanical data I²PAK (TO-262) mechanical data mm Dim Min A A1 b b1 c c2 D e e1 E L L1 L2 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 Typ Max 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 Min 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 inch Typ Max 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 Doc ID 14367 Rev 3 15/18 Packaging mechanical data STB/I/F/P/W23NM60ND 5 Packaging mechanical data D 2 PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 16/18 Doc ID 14367 Rev 3 STB/I/F/P/W23NM60ND Revision history 6 Revision history Table 10. Date 22-Jan-2008 11-Dec-2008 06-Oct-2010 Document revision history Revision 1 2 3 First release Document status promoted from preliminary data to datasheet. Corrected unit in Table 5: On/off states Changes Doc ID 14367 Rev 3 17/18 STB/I/F/P/W23NM60ND Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2010 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 18/18 Doc ID 14367 Rev 3
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