STP26NM60ND

STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND N-channel 600 V, 0.145 Ω typ., 21 A, FDmesh™ II Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 packages Datasheet - production data Features TAB Order codes VDS @ Tjmax RDS(on) max ID 650 V 0.175 21 A 3 1 STB26NM60ND D2 PAK 3 1 2 STF26NM60ND TO-220FP STP26NM60ND TAB STW26NM60ND • 100% avalanche tested 3 1 2 2 • Low input capacitance and gate charge 3 1 TO-220 • Low gate input resistance TO-247 Figure 1. Internal schematic diagram • Extremely high dv/dt and avalanche capabilities Applications '7$% • Switching applications Description * 6 !-V These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters. Table 1. Device summary Order codes Marking Packages Packaging D²PAK Tape and reel STB26NM60ND STF26NM60ND TO-220FP 26NM60ND STP26NM60ND TO-220 STW26NM60ND TO-247 November 2013 This is information on a product in full production. DocID025283 Rev 1 Tube 1/23 www.st.com Contents STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) ............................. 7 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 2/23 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 DocID025283 Rev 1 STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter D2PAK, TO-220, TO-247 VDS Drain-source voltage 600 VGS Gate-source voltage ±25 Unit TO-220FP V V (1) A ID Drain current (continuous) at TC = 25 °C 21 21 ID Drain current (continuous) at TC = 100 °C 13 13(1) A Drain current (pulsed) 84 84(1) A Total dissipation at TC = 25 °C 190 35 W IDM (2) PTOT dv/dt(3) Peak diode recovery voltage slope 40 V/ns dv/dt(4) MOSFET dv/dt ruggedness 40 V/ns VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) Tstg Storage temperature TJ Max. operating junction temperature 2500 V –55 to 150 °C 150 °C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 21 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS 4. VDS ≤ 480 V Table 3. Thermal data Value Symbol Parameter Rthj-case Thermal resistance junctioncase max Rthj-amb Thermal resistance junctionambient max Rthj-pcb(1) Thermal resistance junctionpcb max Unit D²PAK TO-220FP 0.66 3.57 TO-247 0.66 62.5 30 TO-220 °C/W 50 °C/W °C/W 1. When mounted on 1inch² FR-4 board, 2 oz Cu DocID025283 Rev 1 3/23 23 Electrical ratings STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND Table 4. Avalanche characteristics 4/23 Symbol Parameter Value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by TJ max) 4 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAS, VDD = 50 V) 100 mJ DocID025283 Rev 1 STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND 2 Electrical characteristics Electrical characteristics (TCASE=25 °C unless otherwise specified). Table 5. On/off states Value Symbol Parameter Test conditions Unit Min. Typ. Max. Drain-source breakdown voltage ID = 1 mA, VGS = 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = 600 V VDS = 600 V @TC= 125 °C 1 100 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 25 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 4 5 V RDS(on) Static drain-source on- resistance VGS = 10 V, ID = 10.5 A 0.145 0.175 Ω Min. Typ. Max. Unit - 1817 - pF - 90 - pF - 4.4 - pF - 270 - pF - 22 - ns - 14.5 - ns - 69 - ns - 27.5 - ns V(BR)DSS 600 3 V Table 6. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq.(1) Equivalent output capacitance td(on) Turn-on delay time tr td(off) tf Test conditions VDS = 100 V, f = 1 MHz, VGS = 0 VGS = 0, VDS = 0 to 480 V VDD = 300 V, ID = 10.5 A RG = 4.7 Ω VGS = 10 V (see Figure 23), (see Figure 18) Rise time Turn-off delay time Fall time Qg Total gate charge Qgs Gate-source charge Qgd Rg - 54.6 - nC - 9.1 - nC Gate-drain charge VDD = 480 V, ID = 21 A, VGS = 10 V, (see Figure 19) - 32.5 - nC Intrinsic gate resistance f = 1 MHz, ID = 0 - 2.5 - Ω 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS DocID025283 Rev 1 5/23 23 Electrical characteristics STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND Table 7. Source drain diode Symbol Parameter Test conditions Typ. Max. Unit Source-drain current - 21 A ISDM (1) Source-drain current (pulsed) - 84 A VSD (2) Forward on voltage - 1.6 V ISD ISD = 21 A, VGS = 0 trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 21 A, VDD = 60 V di/dt=100 A/µs (see Figure 20) ISD = 21 A,VDD = 60 V di/dt=100 A/µs, TJ = 150 °C (see Figure 20) 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. 6/23 Min. DocID025283 Rev 1 - 170 ns - 1.39 µC - 14 A - 230 ns - 2.24 µC - 18 A STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND 2.1 Electrical characteristics Electrical characteristics (curves) Figure 2. Safe operating area for D²PAK and TO-220 Figure 3. Thermal impedance for D²PAK and TO-220 AM15518v1 Op Lim era ite tion d by in th m is ax ar R e 10 DS a (o n) is ID (A) 10µs 100µs 1ms 10ms 1 Tj=150°C Tc=25°C Single pulse 0.1 0.1 10 1 100 VDS(V) Figure 4. Safe operating area for TO-220FP ID (A) 10 1 Figure 5. Thermal impedance for TO-220FP AM16149v1 is ea ) ar S(on D t R in ax n io y m t b ra pe ed O mit i L s hi 10µs 100µs 1ms 10ms Tj=150°C Tc=25°C 0.1 Single pulse 0.01 0.1 10 1 100 VDS(V) Figure 6. Safe operating area for TO-247 AM15519v1 ID (A) (o n) a is 10µs DS Op Lim era ite tion d by in th m is a ax R re 10 Figure 7. Thermal impedance for TO-247 100µs 1ms 1 Tj=150°C Tc=25°C 10ms Single pulse 0.1 0.1 1 10 100 VDS(V) DocID025283 Rev 1 7/23 23 Electrical characteristics STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND Figure 8. Output characteristics Figure 9. Transfer characteristics AM16017v1 ID (A) 8V VGS=9, 10V 50 AM16018v1 ID (A) 50 VDS=18V 40 40 7V 30 30 20 20 10 10 6V 5V 0 0 10 5 15 20 Figure 10. Static drain-source on-resistance AM16019v1 RDS(on) (Ω) 0.150 0 VDS(V) VGS=10V 4 8 6 VGS(V) 10 Figure 11. Gate charge vs gate-source voltage AM16020v1 VDS VGS (V) 12 0.148 2 0 (V) VDD=480V ID=21A VDS 500 10 400 0.146 8 0.144 300 6 0.142 200 4 0.140 100 2 0.138 0.136 0 2 6 4 8 10 12 14 16 Figure 12. Capacitance variations 0 10 20 30 50 40 60 0 Qg(nC) Figure 13. Normalized gate threshold voltage vs temperature AM16021v1 C (pF) 0 ID(A) AM16034v1 VGS(th) (norm) 1.10 ID = 250 µA 10000 Ciss 1.00 1000 0.90 100 Coss 0.80 10 Crss 1 0.1 8/23 1 10 100 VDS(V) 0.70 -50 DocID025283 Rev 1 -25 0 25 50 75 100 TJ(°C) STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND Figure 14. Normalized on-resistance vs temperature AM16035v1 RDS(on) (norm) 2.1 ID = 10.5 A VGS = 10 V 1.9 Electrical characteristics Figure 15. Source-drain diode forward characteristics AM16037v1 VSD (V) TJ=-50°C 1.0 1.2 1.7 1 1.5 0.8 TJ=150°C 1.3 0.6 1.1 0.4 0.9 0.2 0.7 0.5 -50 -25 0 0 25 50 75 100 AM10636v1 VDS (norm) 1.09 0 TJ(°C) Figure 16. Normalized VDS vs temperature 2 4 6 8 10 12 14 16 18 ISD(A) Figure 17. Output capacitance stored energy AM16033v1 Eoss (µJ) 10 9 ID = 1mA 1.07 1.05 8 1.03 7 1.01 6 0.99 5 4 0.97 3 2 0.95 0.93 0.91 -50 -25 TJ=25°C 0 25 50 75 100 TJ(°C) DocID025283 Rev 1 1 0 0 100 200 300 400 500 600 VDS(V) 9/23 23 Test circuits 3 STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND Test circuits Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 20. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 21. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff 90% 90% IDM tf 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 10/23 0 DocID025283 Rev 1 10% AM01473v1 STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DocID025283 Rev 1 11/23 23 Package mechanical data STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND Table 8. D²PAK (TO-263) mechanical data mm Dim. Min. Typ. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 E1 8.50 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 12/23 Max. 0.4 0° 8° DocID025283 Rev 1 STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND Package mechanical data Figure 24. D²PAK (TO-263) drawing 0079457_T Figure 25. D²PAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 Footprint a. All dimension are in millimeters DocID025283 Rev 1 13/23 23 Package mechanical data STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND Table 9. TO-220FP mechanical data mm Dim. Min. Typ. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 14/23 Max. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 DocID025283 Rev 1 STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND Package mechanical data Figure 26. TO-220FP drawing 7012510_Rev_K_B DocID025283 Rev 1 15/23 23 Package mechanical data STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND Table 10. TO-220 type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 16/23 Max. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 DocID025283 Rev 1 STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND Package mechanical data Figure 27. TO-220 type A drawing ?TYPE!?2EV?4 DocID025283 Rev 1 17/23 23 Package mechanical data STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND Table 11. TO-247 mechanical data mm. Dim. Min. Typ. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 18/23 Max. 5.60 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 DocID025283 Rev 1 5.70 STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND Package mechanical data Figure 28. TO-247 drawing 0075325_G DocID025283 Rev 1 19/23 23 Packing mechanical data 5 STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND Packing mechanical data Table 12. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. 20/23 Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID025283 Rev 1 Min. Max. 330 13.2 26.4 30.4 STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND Packing mechanical data Figure 29. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 W K0 B0 For machine ref. only including draft and radii concentric around B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 Figure 30. Reel T REEL DIMENSIONS 40mm min. Access hole At slot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 DocID025283 Rev 1 21/23 23 Revision history 6 STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND Revision history Table 13. Document revision history Date Revision 23-Sep-2013 1 First release. 2 – – – – – – – – – – 28-Nov-2013 22/23 Changes Modified: ID value in cover page Modified: ID and IDM valued in Figure 2 Modified: Rthj-case values Modified: values in Table 4 Modified: dv/dt value in Table 5, IGSS test condition Modified: typical and ID values in Table 5 Modified: ISD, typical and max values in Table 7 Updated: Figure 4, 13, 14, 15 and 16 Added: Figure 17 Minor text changes DocID025283 Rev 1 STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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