STP2NK100Z

STD2NK100Z STP2NK100Z - STU2NK100Z N-channel 1000 V, 6.25 Ω 1.85 A, TO-220, DPAK, IPAK , Zener-protected SuperMESH™ Power MOSFET Features Type STD2NK100Z STP2NK100Z STU2NK100Z ■ ■ ■ ■ ■ VDSS 1000 V 1000 V 1000 V RDS(on) max < 8.5 Ω < 8.5 Ω < 8.5 Ω ID 1.85 A 1.85 A 1.85 A PTOT 70 W 70 W 1 3 2 3 2 1 70 W TO-220 3 1 IPAK Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability Figure 1. DPAK Application ■ Internal schematic diagram Switching applications Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, specialties is taken to ensure a very good dv/dt capability for the most demanding application. Such series complements ST full range of high voltage Power MOSFETs. Table 1. Device summary Order codes Marking 2NK100Z 2NK100Z 2NK100Z Package DPAK TO-220 IPAK Packaging Tape and reel Tube Tube STD2NK100Z STP2NK100Z STU2NK100Z June 2008 Rev 2 1/16 www.st.com 16 Contents STD2NK100Z - STP2NK100Z - STU2NK100Z Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 6 Test circuits .............................................. 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 STD2NK100Z - STP2NK100Z - STU2NK100Z Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VGS ID ID IDM (1) PTOT Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Derating factor Value 1000 ± 30 1.85 1.16 7.4 70 0.56 3000 2.5 -55 to 150 Unit V V A A A W W/°C V V/ns °C VESD(G-S) dv/dt (2) Tj Tstg G-S ESD (HBM C=100 pF, R=1.5 kΩ) Peak diode recovery voltage slope Operating junction temperature Storage temperature 1. Pulse width limited by safe operating area 2. ISD ≤ 1.85 A, di/dt ≤ 200 A/µs, VDD = 80% V(BR)DSS Table 3. Symbol Rthj-case Rthj-pcb Rthj-amb Tl Thermal data Value Parameter TO-220 Thermal resistance junction-case max Thermal resistance junction-pcb minimum footprint Thermal resistance junction-amb max Maximum lead temperature for soldering purpose -62.5 300 IPAK 1.79 -100 50 DPAK °C/W °C/W °C/W °C Unit Table 4. Symbol IAR (1) EAS (2) Avalanche data Parameter Avalanche current, repetitive or not-repetitive Single pulse avalanche energy Value 1.85 170 Unit A mJ 1. Pulse width limited by Tjmax 2. Starting Tj = 25°C, ID = IAR, VDD = 50V 3/16 Electrical characteristics STD2NK100Z - STP2NK100Z - STU2NK100Z 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1 mA, VGS= 0 VDS = Max rating, VDS = Max rating,Tc=125 °C VGS = ± 30 V VDS= VGS, ID = 50 µA VGS= 10 V, ID= 0.9 A 3 3.75 6.25 Min. 1000 1 50 ±10 Typ. Max. Unit V µA µA µA V Ω 4.5 8.5 Table 6. Symbol gfs (1) Ciss Coss Crss Coss eq.(2) RG Qg Qgs Qgd 1. Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Gate input resistance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS =15 V, ID = 0.9 A Min. Typ. 2.4 499 53 9 28 6.6 16 3 9 Max. Unit S pF pF pF pF Ω nC nC nC VDS =25 V, f=1 MHz, VGS=0 VGS =0, VDS =0 to 800 V f=1 MHz, open drain VDD=800 V, ID = 1.85 A VGS =10 V (see Figure 17) Pulsed: pulse duration = 300 µs, duty cycle 1.5% 2. Coss eq. is defined as constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/16 STD2NK100Z - STP2NK100Z - STU2NK100Z Electrical characteristics Table 7. Symbol td(on) tr td(off) tr Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD= 500 V, ID= 0.9 A, RG=4.7 Ω, VGS=10 V (see Figure 16) Min. Typ. 7.2 6.5 41.5 32.5 Max. Unit ns ns ns ns Table 8. Symbol ISD ISDM (1) Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 1.85 A, VGS=0 ISD= 1.85 A, di/dt= 100 A/µs, VDD= 60 V (see Figure 21) ISD= 1.85 A, di/dt= 100 A/µs, VDD= 60 V, Tj=150 °C (see Figure 21) 476 1.6 6.9 532 1.9 88 Test conditions Min. Typ. Max. 1.85 7.4 1.6 Unit A A V ns µC A ns µC A VSD (2) trr Qrr IRRM trr Qrr IRRM 1. Pulse width limited by package 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% Table 9. Symbol BVGSO (1) Gate-source zener diode Parameter Gate-source breakdown voltage Test conditions IGS = ±1mA (open drain) Min. 30 Typ. Max. Unit V 1. The built in back-to-back zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated zener diodes thus avoid the usage of external components. 5/16 Electrical characteristics STD2NK100Z - STP2NK100Z - STU2NK100Z 2.1 Figure 2. Electrical characteristics (curves) Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220 Figure 4. Safe operating area for DPAK, IPAK Figure 5. Thermal impedance for DPAK, IPAK Figure 6. Output characteristics Figure 7. Transfer characteristics 6/16 STD2NK100Z - STP2NK100Z - STU2NK100Z Figure 8. Normalized BVDSS vs temperature Figure 9. Electrical characteristics Static drain-source on resistance Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs temperature Figure 13. Normalized on resistance vs temperature 7/16 Electrical characteristics Figure 14. Source-drain diode forward characteristics STD2NK100Z - STP2NK100Z - STU2NK100Z Figure 15. Maximum avalanche energy vs temperature AM00056v1 EAS(mJ) 190 180 170 160 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 10 20 30 40 50 ID=1.85A 60 70 80 90 100 110 120 130 140 TJ(°C) 8/16 STD2NK100Z - STP2NK100Z - STU2NK100Z Test circuits 3 Test circuits Figure 17. Gate charge test circuit Figure 16. Switching times test circuit for resistive load Figure 18. Test circuit for inductive load Figure 19. Unclamped inductive load test switching and diode recovery times circuit Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform 9/16 Package mechanical data STD2NK100Z - STP2NK100Z - STU2NK100Z 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/16 STD2NK100Z - STP2NK100Z - STU2NK100Z Package mechanical data TO-220 mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q 4.40 0.61 1.14 0.48 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6 inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116 11/16 Package mechanical data STD2NK100Z - STP2NK100Z - STU2NK100Z TO-251 (IPAK) mechanical data mm. DIM. A A1 b b2 b4 c c2 D E e e1 H L (L1) L2 V1 9.00 0.80 0.80 10 o 4.40 16.10 9.40 1.20 5.20 0.45 0.48 6.00 6.40 2.28 4.60 min. 2.20 0.90 0.64 typ max. 2.40 1.10 0.90 0.95 5.40 0.60 0.60 6.20 6.60 0068771_H 12/16 STD2NK100Z - STP2NK100Z - STU2NK100Z Package mechanical data TO-252 (DPAK) mechanical data DIM. A A1 A2 b b4 c c2 D D1 E E1 e e1 H L L1 L2 L4 R V2 0o 0.60 0.20 8o 4.40 9.35 1 2.80 0.80 1 6.40 4.70 2.28 4.60 10.10 mm. min. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 5.10 6.60 typ max. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 0068772_G 13/16 Packaging mechanical data STD2NK100Z - STP2NK100Z - STU2NK100Z 5 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R W BASE QTY 2500 mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40 15.7 16.3 inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618 0.641 MAX. 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1 14/16 STD2NK100Z - STP2NK100Z - STU2NK100Z Revision history 6 Revision history Table 10. Date 24-Oct-2007 18-Jun-2008 Document revision history Revision 1 2 First release – Inserted new package, mechanical data IPAK – Document status promoted from preliminary data to datasheet. Changes 15/16 STD2NK100Z - STP2NK100Z - STU2NK100Z Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 16/16