STP3NK100Z

STF3NK100Z - STD3NK100Z STP3NK100Z N-channel 1000V - 5.4Ω - 2.5A - TO-220 - TO-220FP - DPAK Zener-protected SuperMESH™ Power MOSFET Features Type STF3NK100Z STP3NK100Z STD3NK100Z ■ ■ ■ ■ ■ VDSS 1000V 1000V 1000V RDS(on) Max < 6Ω < 6Ω < 6Ω ID 2.5A 2.5A 2.5A PTOT 25W 90W 90W TO-220 1 2 1 3 2 3 TO-220FP Extremely high dv/dt capability 3 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability Figure 1. 1 DPAK Application ■ Internal schematic diagram Switching applications Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, specialties is taken to ensure a very good dv/dt capability for the most demanding application. Such series complements ST full range of high voltage Power MOSFETs. Table 1. Device summary Marking F3NK100Z P3NK100Z D3NK100Z Package TO-220FP TO-220 DPAK Packaging Tube Tube Tape & reel Order codes STF3NK100Z STP3NK100Z STD3NK100Z October 2007 Rev 2 1/16 www.st.com 16 Contents STF3NK100Z - STP3NK100Z - STD3NK100Z Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 6 Test circuits .............................................. 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 STF3NK100Z - STP3NK100Z - STD3NK100Z Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VGS ID ID IDM (2) PTOT Absolute maximum ratings Value Parameter TO-220/DPAK TO-220FP Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC = 100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating factor 2.5 1.57 10 90 0.72 3000 4.5 -2500 1000 ± 30 2.5 (1) 1.57(2) 10 (2) 25 0.2 V V A A A W W/°C V V/ns V Unit VESD(G-S) dv/dt (3) VISO Tj Tstg Gate source ESD (HBM-C=100pF, R=1.5KΩ) Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25°C) Operating junction temperature Storage temperature -55 to 150 °C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 2.5A, di/dt ≤ 200A/µs, VDD = 80% V(BR)DSS Table 3. Symbol Rthj-case Rthj-amb TL Thermal data Value Parameter TO-220/DPAK TO-220FP Thermal resistance junction-case max Thermal resistance junction-amb max Maximum lead temperature for soldering purpose 1.39 62.5 300 5 °C/W °C/W Unit Table 4. Symbol IAR (1) EAS (2) Avalanche data Parameter Avalanche current, repetitive or not-repetitive Single pulse avalanche energy Value 2.5 110 Unit A mJ 1. Pulse width limited by Tjmax 2. Starting Tj = 25°C, ID = IAR, VDD = 50V 3/16 Electrical characteristics STF3NK100Z - STP3NK100Z - STD3NK100Z 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1mA, VGS= 0 VDS = Max rating, VDS = Max rating,Tc=125°C VGS = ± 20V VDS= VGS, ID = 50µA VGS= 10V, ID= 1.25A 3 3.75 5.4 Min. 1000 1 50 ±10 Typ. Max. Unit V µA µA µA V Ω 4.5 6 Table 6. Symbol gfs (1) Ciss Coss Crss Coss eq.(2) RG Qg Qgs Qgd 1. Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Gate input resistance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS =15V, ID = 1.25A Min. Typ. 2.4 601 53 12 15 8.6 18 3.6 9.2 Max. Unit S pF pF pF pF Ω nC nC nC VDS =25V, f=1 MHz, VGS=0 VGS =0V, VDS =0V to 800V f=1 MHz, open drain VDD=800V, ID = 2.5A VGS =10V (see Figure 17) Pulsed: pulse duration = 300µs, duty cycle 1.5% 2. Coss eq. is defined as constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/16 STF3NK100Z - STP3NK100Z - STD3NK100Z Electrical characteristics Table 7. Symbol td(on) tr td(off) tr Switching times Parameter Turn-on delay time Rise time Test conditions VDD= 500V, ID= 1.25A, RG=4.7Ω, VGS=10V (see Figure 16) VDD= 500V, ID= 1.25A, RG=4.7Ω, VGS=10V (see Figure 16) Min. Typ. 15 7.5 Max. Unit ns ns Turn-off delay time Fall time 39 32 ns ns Table 8. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 2.5A, VGS=0 ISD= 2.5A, di/dt = 100A/µs, VDD= 100V, Tj= 25°C (see Figure 21) ISD= 2.5A, di/dt = 100A/µs, VDD= 100V, Tj=150°C (see Figure 21) 584 2.3 8 628 2.5 8.1 Test conditions Min. Typ. Max. 2.5 10 1.6 Unit A A V ns µC A ns µC A 1. Pulse width limited by package 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% Table 9. Symbol BVGSO (1) Gate-source zener diode Parameter Gate-source breakdown voltage Test conditions IGS = ±1mA (open drain) Min. 30 Typ. Max. Unit V 1. The built in back-to-back zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated zener diodes thus avoid the usage of external components. 5/16 Electrical characteristics STF3NK100Z - STP3NK100Z - STD3NK100Z 2.1 Figure 2. Electrical characteristics (curves) Safe operating area for TO-220/ DPAK Figure 3. Thermal impedance for TO-220/ DPAK Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Output characteristics Figure 7. Transfer characteristics 6/16 STF3NK100Z - STP3NK100Z - STD3NK100Z Figure 8. Normalized BVDSS vs. temperature Figure 9. Electrical characteristics Static drain-source on resistance Figure 10. Gate charge vs. gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs. temperature Figure 13. Normalized on resistance vs. temperature 7/16 Electrical characteristics Figure 14. Source-drain diode forward characteristics STF3NK100Z - STP3NK100Z - STD3NK100Z Figure 15. Maximum avalanche energy vs Tj 8/16 STF3NK100Z - STP3NK100Z - STD3NK100Z Test circuits 3 Test circuits Figure 17. Gate charge test circuit Figure 16. Switching times test circuit for resistive load Figure 18. Test circuit for inductive load Figure 19. Unclamped inductive load test switching and diode recovery times circuit Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform 9/16 Package mechanical data STF3NK100Z - STP3NK100Z - STD3NK100Z 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/16 STF3NK100Z - STP3NK100Z - STD3NK100Z Package mechanical data TO-220 mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q 4.40 0.61 1.14 0.49 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6 inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116 11/16 Package mechanical data STF3NK100Z - STP3NK100Z - STD3NK100Z TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Ø A B L3 L6 L7 F1 F D G1 H F2 L2 L5 E 123 L4 12/16 G STF3NK100Z - STP3NK100Z - STD3NK100Z Package mechanical data DPAK MECHANICAL DATA mm. DIM. MIN. A A1 A2 B b4 C C2 D D1 E E1 e e1 H L (L1) L2 L4 R V2 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 5.1 6.4 4.7 2.28 4.4 9.35 1 2.8 0.8 0.6 0.2 0° 8° 0° 1 0.023 0.008 8° 4.6 10.1 0.173 0.368 0.039 0.110 0.031 0.039 6.6 0.252 0.185 0.090 0.181 0.397 TYP MAX. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.200 0.260 TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 inch 0068772-F 13/16 Packaging mechanical data STF3NK100Z - STP3NK100Z - STD3NK100Z 5 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R W BASE QTY 2500 mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40 15.7 16.3 inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618 0.641 MAX. 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1 14/16 STF3NK100Z - STP3NK100Z - STD3NK100Z Revision history 6 Revision history Table 10. Date 17-May-2007 18-Oct-2007 Document revision history Revision 1 2 First release Added DPAK Changes 15/16 STF3NK100Z - STP3NK100Z - STD3NK100Z Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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