STS10N3LH5

STS10N3LH5 N-channel 30 V, 0.019 Ω, 10 A, SO-8 STripFET™ V Power MOSFET Features Type VDSS RDS(on) max ID STS10N3LH5 30 V 0.021 Ω 10 A ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ Very low switching gate charge ■ High avalanche ruggedness ■ Low gate drive power losses SO-8 Application ■ Switching applications Description Figure 1. Internal schematic diagram This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM. Table 1. Device summary Order codes Marking Package Packaging STS10N3LH5 10D3L SO-8 Tape and reel May 2009 Doc ID 15618 Rev 1 1/13 www.st.com 13 Contents STS10N3LH5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ........................... 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 .............................................. 8 Doc ID 15618 Rev 1 STS10N3LH5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit 30 V ± 22 V Drain current (continuous) at TC = 25 °C 10 A Drain current (continuous) at TC = 100 °C 7 A Drain current (pulsed) 40 A Total dissipation at TC = 25 °C 2.5 W Derating factor 0.02 W/°C VDS Drain-source voltage (VGS = 0) VGS Gate-Source voltage ID (1) ID IDM (2) PTOT EAS (3) Single pulse avalanche energy 50 mJ TJ Tstg Operating junction temperature Storage temperature - 55 to 150 °C Value Unit 1. Limited by wire bonding 2. Pulse width limited by safe operating area 3. Starting TJ = 25 °C, ID = 21 A, L= 0.2 mH Table 3. Symbol Thermal resistance Parameter RthJC Thermal resistance junction-case max 50 °C/W RthJA Thermal resistance junction-case max 100 °C/W Maximum lead temperature for soldering purpose 275 °C TJ Doc ID 15618 Rev 1 3/13 Electrical characteristics 2 STS10N3LH5 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown Voltage ID = 250 µA, VGS= 0 IDSS VDS = 30 V Zero gate voltage drain current (VGS = 0) VDS = 30 V, Tc = 125 °C IGSS Gate body leakage current (VDS = 0) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on resistance Symbol Min. 1 10 µA µA ±100 nA V VGS = 10 V, ID= 5 A 0.019 0.021 Ω VGS = 4.5 V, ID= 5 A 0.023 0.028 Ω Min Typ. Max. Unit - 475 97 19 - pF pF pF 4.6 1.7 1.9 - nC nC nC Dynamic Parameter Test conditions VDS = 25 V, f = 1 MHz, VGS = 0 Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 15 V, ID = 10 A VGS = 5 V (Figure 14) - Pre Vth gate-to-source VDD = 15 V, ID = 10A charge VGS = 5 V Post Vth gate-to(Figure 19) source charge - RG Unit V 1 Input capacitance Output capacitance Reverse transfer capacitance Qgs2 Max. 30 Ciss Coss Crss Qgs1 Typ. VGS = ± 22 V VGS(th) Table 5. 4/13 Static Gate input resistance f = 1 MHz gate bias Bias = 0 test signal level = 20 mV open drain Doc ID 15618 Rev 1 nC 0.67 - nC 0.84 - 2.5 - Ω STS10N3LH5 Electrical characteristics Table 6. Symbol td(on) tr td(off) tf Table 7. Symbol ISD ISDM (1) VSD trr Qrr IRRM Switching on/off (resistive load) Parameter Test conditions Min. Typ. Max. Unit - 4 22 - ns ns - 13 2.8 - ns ns Min. Typ. Max. Unit - 10 40 A A 1.1 V VDD = 15 V, ID = 5 A, Turn-on delay time Rise time RG = 4.7 Ω, VGS = 10 V (Figure 13 and Figure 18) VDD = 15 V, ID = 5 A, Turn-off delay time Fall time RG = 4.7 Ω, VGS = 10 V (Figure 13 and Figure 18) Source drain diode Parameter Test conditions Source-drain current Source-drain current (pulsed) Forward on voltage ISD = 5 A, VGS = 0 - Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 10 A, VDD = 25 V di/dt = 100 A/µs, (Figure 15) - 16.2 7.8 1 ns nC A 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5 % Doc ID 15618 Rev 1 5/13 Electrical characteristics STS10N3LH5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 5. Transfer characteristics AM03899v1 ID (A) Tj=150°C Tc=25°C s ai are n) his DS(o t R n n i ax tio m era d by p O ite Lim 100 10 Sinlge pulse 100ms 1 10ms 1s 0.1 0.01 0.1 Figure 4. 10 1 VDS(V) Output characteristics AM03900v1 ID (A) 70 VGS=10V AM03901v1 ID (A) VDS=5V 70 6V 60 60 5V 50 50 40 40 4V 30 30 20 20 3V 10 0 0 Figure 6. 10 1 2 3 4 Normalized BVDSS vs temperature AM03902v1 BVDSS (norm) 0 0 VDS(V) Figure 7. 2 4 8 6 VGS(V) Static drain-source on resistance AM03903v1 RDS(on) (Ω) ID=13.5A VGS=10V 35 1.10 30 1.05 25 1.00 20 15 0.95 10 0.90 0.85 -55 -30 -5 6/13 5 20 45 70 95 120 TJ(°C) Doc ID 15618 Rev 1 0 0 5 10 15 20 25 ID(A) STS10N3LH5 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. AM03904v1 VGS (V) VDD=15V 12 Capacitance variations C (pF) AM03905v1 810 ID=27A TJ=25°C f=1MHz 710 10 610 8 510 6 410 Ciss 310 4 210 2 Crss 110 0 4 2 0 Qg(nC) 6 Figure 10. Normalized gate threshold voltage vs temperature AM03906v1 VGS(th) (norm) 1.1 10 0 Coss 10 20 VDS(V) Figure 11. Normalized on resistance vs temperature AM03907v1 RDS(on) (norm) 1.8 1.6 1.0 1.4 0.9 1.2 0.8 1.0 0.7 0.6 0.8 0.5 0.6 0.4 -55 -30 -5 20 45 70 95 120 145 TJ(°C) 0.4 -55 -30 -5 20 45 70 95 120 TJ(°C) Figure 12. Source-drain diode forward characteristics AM03908v1 VSD (V) TJ=-55°C 1.1 1.0 0.9 0.8 TJ=175°C TJ=25°C 0.7 0.6 0.5 0.4 0 5 10 15 20 25 ISD(A) Doc ID 15618 Rev 1 7/13 Test circuits 3 STS10N3LH5 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100µH S 3.3 µF B 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 17. Unclamped inductive waveform AM01471v1 Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/13 0 Doc ID 15618 Rev 1 10% AM01473v1 STS10N3LH5 Test circuits Figure 19. Gate charge waveform Doc ID 15618 Rev 1 9/13 Package mechanical data 4 STS10N3LH5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/13 Doc ID 15618 Rev 1 STS10N3LH5 Package mechanical data SO-8 MECHANICAL DATA DIM. mm. MIN. TYP A a1 inch MAX. MIN. TYP. 1.75 0.1 0.068 0.25 a2 MAX. 0.003 0.009 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 0.244 c1 45 (typ.) e 1.27 e3 3.81 0.050 0.150 F 3.8 4.0 0.14 L 0.4 1.27 0.015 M 0.6 S 0.157 0.050 0.023 8 (max.) Doc ID 15618 Rev 1 11/13 Revision history 5 STS10N3LH5 Revision history Table 8. 12/13 Document revision history Date Revision 06-May-2009 1 Changes First release Doc ID 15618 Rev 1 STS10N3LH5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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