STS10P4LLF6

STS10P4LLF6 Datasheet P‑channel -40 V, 12.5 mΩ typ., -10 A STripFET F6 Power MOSFET in SO‑8 package Features 5 8 4 • • • • 1 SO-8 Order code VDS RDS(on) max. ID STS10P4LLF6 -40 V 15 mΩ -10 A Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss D(5, 6, 7, 8) Applications • Switching applications G(4) Description S(1, 2, 3) AM01475v4 This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Product status link STS10P4LLF6 Product summary Order code STS10P4LLF6 Marking 10P4L Package SO-8 Packing Tape and reel DS10121 - Rev 5 - January 2021 For further information contact your local STMicroelectronics sales office. www.st.com STS10P4LLF6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage -40 V VGS Gate-source voltage ±20 V Drain current (continuous) at Tamb = 25 °C -10 A Drain current (continuous) at Tamb = 100 °C -5.6 A IDM (1) Drain current (pulsed) -40 A PTOT Total power dissipation at Tamb = 25 °C 2.7 W Tstg Storage temperature -55 to 150 °C 150 °C Value Unit 47 °C/W ID TJ Operating junction temperature 1. Pulse width limited by safe operating area. Table 2. Thermal data Symbol RthJA (1) Parameter Thermal resistance, junction-to-ambient 1. When mounted on 1 inch² FR-4 board, 2 oz. Cu., t ≤ 10 sec. DS10121 - Rev 5 page 2/13 STS10P4LLF6 Electrical characteristics 2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 3. Static Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage ID = -250 µA Min. Typ. Max. -40 Unit V VDS = -40 V -1 µA VDS = -40 V, TC = 125 °C -10 µA ±100 nA -2.5 V IDSS Zero gate voltage drain current IGSS Gate-body leakage current VDS = 0 V, VGS = ±20 V VGS(th) Gate threshold voltage VDS = VGS, ID = -250 µA RDS(on) Static drain-source on-resistance -1 VGS = -10 V, ID = -3 A 12.5 15 VGS = -4.5 V, ID= -3 A 17 20 Min. Typ. Max. Unit - 3525 - pF - 344 - pF - 238.5 - pF - 34 - nC - 11.3 - nC - 13.8 - nC Min. Typ. Max. Unit - 49.4 - ns mΩ Table 4. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS = -25 V, f = 1 MHz, VGS = 0 V VDD = -20 V, ID = -10 A, VGS = -4.5 V (see Figure 13. Test circuit for gate charge behavior) Table 5. Switching times Symbol td(on) tr td(off) tf Parameter Turn-on delay time Test conditions VDD = -20 V, ID = -5 A, Rise time RG = 4.7 Ω, VGS = -10 V - 60.6 - ns Turn-off-delay time (see Figure 12. Test circuit for resistive load switching times) - 170 - ns - 20 - ns Min. Typ. Max. Unit -1.1 V Fall time Table 6. Source drain diode Symbol (1) Parameter Test conditions Forward on voltage VGS = 0 V, ISD = -3 A - trr Reverse recovery time ISD = -5 A, di/dt = 100 A/µs, - 29 ns Qrr Reverse recovery charge VDD = -32 V, TJ = 150 °C - 27.6 nC Reverse recovery current (see Figure 14. Test circuit for inductive load switching and diode recovery times) - -1.9 A VSD IRRM 1. Pulse test: pulse duration = 300 µs, duty cycle 1.5%. DS10121 - Rev 5 page 3/13 STS10P4LLF6 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 2. Thermal impedance Figure 1. Safe operating area GIPG080920141302LM ID (A) K GIPG0809141324LM δ=0.5 0.2 10.0 a re 10 -1 is a is on) th DS( in ax R ionby m t a er d 0.1 0.05 10µs 0.02 0.01 te OpLimi 1.00 100µs 10 -2 1ms Single pulse 10 0.10 Tj=150 °C Tc=25 °C Single pulse 0.01 0.1 1.0 VDS(V) 10 Figure 3. Output characteristics 10 -4 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 tp(s) 10 1 Figure 4. Transfer characteristics GIPG020920140913LM ID (A) VGS=8, 9, 10 V 7V 200 -3 GIPG020920140929LM ID (A) VDS=5 V 180 160 6V 140 150 5V 120 100 100 4V 80 60 50 40 3V 20 2V 0 0 4 2 6 8 10 VDS(V) Figure 5. Gate charge vs gate-source voltage 0 0 13.5 8 13.0 6 12.5 4 12.0 2 11.5 DS10121 - Rev 5 6 5 20 40 60 80 Q g(nC) 9 VGS(V) 8 7 Figure 6. Static drain-source on-resistance 10 Note: 4 3 GIPG080920141345LM RDS(on) (mΩ) 14.0 V DD = 20 V ID = 13 A 12 0 2 GIPG020920141000LM V GS (V) 0 1 11.0 0 VGS=10 V 1 2 3 4 5 6 7 8 9 ID(A) For the P-channel Power MOSFET, current and voltage polarities are reversed. page 4/13 STS10P4LLF6 Electrical characteristics (curves) Figure 8. Normalized gate threshold voltage vs temperature Figure 7. Capacitance variation GIPG020920141049LM C (pF) 4000 3500 Ciss 3000 2500 2000 1500 1000 500 0 0 30 20 10 Coss Crss VDS(V) Figure 10. Normalized VBR(DSS) vs temperature Figure 9. Normalized on-resistance vs temperature V(BR)DSS GIPG020920141132LM RDS(on) (norm) VGS=10 V 1.8 1.1 ID=1 mA 1.08 1.6 1.06 1.4 1.04 1.2 1.02 1.0 1.00 0.98 0.8 0.96 0.6 0.4 -75 GIPG020920141148LM (norm) 0.94 -25 25 75 0.92 -75 175 TJ(°C) 125 -25 25 75 125 175 TJ(°C) Figure 11. Source-drain diode forward characteristics GIPG020920141201LM VSD (V) 1.0 0.9 TJ = -55 °C 0.8 0.7 TJ=25 °C 0.6 TJ=175 °C 0.5 0.4 0.0 Note: DS10121 - Rev 5 0 2 4 6 8 10 12 14 ISD(A) For the P-channel Power MOSFET, current and voltage polarities are reversed. page 5/13 STS10P4LLF6 Test circuits 3 Test circuits Figure 12. Test circuit for resistive load switching times Figure 13. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 14. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A L A VD 100 µH fast diode B B B 3.3 µF D G + Figure 15. Unclamped inductive load test circuit RG 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi _ pulse width AM01471v1 AM01470v1 Figure 17. Switching time waveform Figure 16. Unclamped inductive waveform ton V(BR)DSS td(on) toff td(off) tr tf VD 90% 90% IDM VDD 10% 0 ID VDD VGS AM01472v1 0 VDS 10% 90% 10% AM01473v1 DS10121 - Rev 5 page 6/13 STS10P4LLF6 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 SO-8 package information Figure 18. SO-8 package outline 0016023_So-807_fig2_Rev10 DS10121 - Rev 5 page 7/13 STS10P4LLF6 SO-8 package information Table 7. SO-8 mechanical data Dim. mm Min. Typ. Max. A 1.75 A1 0.10 A2 1.25 b 0.31 0.51 b1 0.28 0.48 c 0.10 0.25 c1 0.10 0.23 D 4.80 4.90 5.00 E 5.80 6.00 6.20 E1 3.80 3.90 4.00 e 0.25 1.27 h 0.25 0.50 L 0.40 1.27 L1 1.04 L2 0.25 k 0° 8° ccc 0.10 Figure 19. SO-8 recommended footprint (dimensions are in mm) 0016023_So-807_footprint_Rev10 DS10121 - Rev 5 page 8/13 STS10P4LLF6 SO-8 packing information 4.2 SO-8 packing information Figure 20. SO-8 tape and reel dimensions D A N T Po Bo Ko Ao P 0016023_SO-8_O7_T_R Figure 21. Tape orientation DS10121 - Rev 5 page 9/13 STS10P4LLF6 SO-8 packing information Table 8. SO-8 tape and reel mechanical data Dim. mm Min. Typ. A 330 C 12.8 D 20.2 N 60 T DS10121 - Rev 5 Max. 13.2 - 22.4 Ao 6.5 6.7 Bo 5.4 5.6 Ko 2.0 2.2 Po 3.9 4.1 P 7.9 8.1 page 10/13 STS10P4LLF6 Revision history Table 9. Document revision history Date Revision 20-Jan-2014 1 Changes First revision. Changed the title. Updated Section "Features" and Section "Description". 09-Sep-2014 2 Updated Table 4: "On/off states", Table 5: "Dynamic", Table 6: "Switching times", Table 7: "Source-drain diode". Added Section 3: "Electrical characteristics (curves)". Document status promoted from preliminary data to production 16-Dec-2014 3 data. Minor text changes. Updated title and features in cover page. 09-Dec-2020 4 Updated Section 1 Electrical ratings and Section 2 Electrical characteristics. Minor text changes. 21-Jan-2021 DS10121 - Rev 5 5 Updated Internal schematic. Minor text changes. page 11/13 STS10P4LLF6 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4.1 SO-8 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4.2 SO-8 packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 DS10121 - Rev 5 page 12/13 STS10P4LLF6 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2021 STMicroelectronics – All rights reserved DS10121 - Rev 5 page 13/13