STTH10002TV1

STTH10002 Ultrafast recovery diode Main product characteristics IF(AV) VRRM Tj (max) VF (typ) trr (typ) 2 x 50 A 200 V 150° C 0.72 V 30 ns A1 K1 A1 K2 Features and benefits ■ ■ ■ ■ A2 K2 A1 K1 K1 A2 A1 K2 Very low forward losses Low recovery time High surge current capability Insulated – Insulating voltage = 2500 Vrms – Capacitance = 45 pF A2 K2 K1 A2 Description The STTH10002 is a dual rectifier suited for welding equipment, and high power industrial applications. Packaged in ISOTOP, this device is intended for use in the secondary rectification of power converters. ISOTOP STTH10002TV1 ISOTOP STTH10002TV2 Order codes Part Number STTH10002TV1 STTH10002TV2 Marking STTH10002TV1 STTH10002TV2 April 2006 Rev 1 www.st.com 1/8 Characteristics STTH10002 1 Table 1. Symbol VRRM IF(RMS) IF(AV) IFSM Tstg Tj Characteristics Absolute ratings (limiting values at Tj = 25° C, unless otherwise specified) Parameter Repetitive peak reverse voltage RMS forward current Average forward current, δ = 0.5 Surge non repetitive forward current Storage temperature range Maximum operating junction temperature Per diode Per diode Tc = 100° C Per device Tc = 95° C tp = 10 ms Sinusoidal 750 -55 to + 175 150 A °C °C Value 200 150 50 Unit V A A Table 2. Symbol Rth(j-c) Rth(c) Thermal parameters Parameter Per diode Junction to case Total Coupling 0.55 0.1 ° C/W Value 1 Unit When the two diodes 1 and 2 are used simultaneously: ∆Tj(diode 1) = P (diode 1) X Rth(j-c) (Per diode) + P (diode 2) x Rth(c) Table 3. Symbol IR(1) Static electrical characteristics Parameter Reverse leakage current Test conditions Tj = 25° C Tj = 125° C Tj = 25° C VR = VRRM IF = 50 A IF = 100 A IF = 100 A IF = 50 A IF = 100 A 0.90 0.72 0.86 Min. Typ Max. 50 µA 50 500 1 1.15 1.0 0.80 0.97 V Unit VF(2) Forward voltage drop Tj = 125° C Tj = 150° C 1. Pulse test: tp = 5 ms, δ < 2 % 2. Pulse test: tp = 380 µs, δ < 2 % To evaluate the conduction losses use the following equation: P = 0.63 x IF(AV) + 0.0034 IF2(RMS) 2/8 STTH10002 Table 4. Symbol Characteristics Dynamic characteristics Parameter Test conditions IF = 1 A, dIF/dt = -50 A/µs, VR = 30 V, Tj = 25 °C IF = 1 A, dIF/dt = -200 A/µs, VR = 30 V, Tj = 25 °C Min. Typ 53 30 10 180 1.6 Max. 65 37 13 A ns V Unit ns trr Reverse recovery time IRM tfr VFP Reverse recovery current Forward recovery time Forward recovery voltage IF = 50 A, dIF/dt = 200 A/µs, VR = 160 V, Tj = 125 °C IF = 50 A, dIF/dt = 200 A/µs VFR = 1.1 x VFmax, Tj = 25 °C IF = 50 A, dIF/dt = 200 A/µs, Tj = 25 °C Figure 1. Peak current versus duty cycle Figure 2. Forward voltage drop versus forward current (typical values, per diode) IM(A) 600 T IM IFM(A) 300 500 δ d=tp/T tp 250 400 P = 100 W 200 300 P = 60 W 150 Tj=150°C 200 P = 30 W 100 100 50 Tj=25°C δ 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VFM(V) 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Figure 3. Forward voltage drop versus forward current (maximum values, per diode) Figure 4. Relative variation of thermal impedance, junction to case, versus pulse duration IFM(A) 300 Zth(j-c)/Rth(j-c) 1.0 Single pulse ISOTOP 250 200 150 100 Tj=150°C 50 Tj=25°C VFM(V) 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 tp(s) 0.1 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 3/8 Characteristics STTH10002 Figure 5. Junction capacitance versus reverse applied voltage (typical values) F=1MHz Vosc=30mVRMS Tj=25°C Figure 6. Reverse recovery charges versus dIF/dt (typical values) C(pF) 1000 450 400 350 300 250 200 150 100 VR(V) QRR(nC) IF = 50 A VR=160 V Tj=125 °C Tj=25 °C 50 0 dIF/dt(A/µs) 10 100 1000 100 1 10 100 1000 Figure 7. tRR(ns) 120 110 100 90 80 70 60 50 40 30 20 10 0 10 Reverse recovery time versus dIF/dt Figure 8. (typical values) IRM(A) 20 IF= 50 A VR= 160 V IF= 50 A VR=160V Peak reverse recovery current versus dIF/dt (typical values) 16 Tj=125 °C 12 Tj=125 °C Tj=25 °C 8 4 dIF/dt(A/µs) 0 Tj=25 °C dIF/dt(A/µs) 1000 100 1000 10 100 Figure 9. Dynamic parameters versus junction temperature QRR; IRM [T j] / Q RR; IRM [T j=125°C] 1.4 1.2 1.0 0.8 0.6 QRR IRM IF= 50 A VR=160V 0.4 0.2 Tj(°C) 0.0 25 50 75 100 125 150 4/8 STTH10002 Ordering information scheme 2 Ordering information scheme STTH 100 02 TVx Ultrafast switching diode Average forward current 100 = 100 A Repetitive peak reverse voltage 02 = 200 V Package TVx = ISOTOP 5/8 Package information STTH10002 3 Package information Table 5. ISOTOP dimensions DIMENSIONS REF. E G2 Millimeters Min. Max. 12.20 9.10 8.20 0.85 2.05 38.20 31.70 25.50 24.15 Inches Min. 0.465 0.350 0.307 0.030 0.077 1.488 1.240 0.990 0.939 Max. 0.480 0.358 0.323 0.033 0.081 1.504 1.248 1.004 0.951 C A A 11.80 8.90 7.8 0.75 1.95 37.80 31.50 25.15 23.85 A1 A1 C2 E2 F1 F B C C2 D D1 P1 E E1 D S G D1 E2 G 24.80 typ. 14.90 12.60 3.50 4.10 4.60 4.00 4.00 30.10 15.10 12.80 4.30 4.30 5.00 4.30 4.40 30.30 0.976 typ. 0.587 0.496 0.138 0.161 0.181 0.157 0.157 1.185 0.594 0.504 0.169 0.169 0.197 0.69 0.173 1.193 B G1 G2 ØP G1 E1 F F1 P P1 S In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 6/8 STTH10002 Ordering information 4 Ordering information Part Number STTH10002TV1 STTH10002TV2 Marking STTH10002TV1 STTH10002TV2 Package ISOTOP ISOTOP Weight 27 g 27 g Base qty 10 10 Delivery mode Tube Tube 5 Revision history Date 05-Apr-2006 Revision 1 First issue Description of Changes 7/8 STTH10002 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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