STTH16R04CG

STTH16R04C Ultrafast recovery diode Datasheet - production data Description A1 K This series uses ST's new 400 V planar Pt doping technology. This device is specially suited for switching mode base drive and transistor circuits. A2 K TO-220AB K K A1 Packaged in through-the-hole and surface mount packages, this device is intended for use in low voltage, high frequency inverters, freewheeling and polarity protection. A2 Table 1: Device summary K A2 A2 A1 D²PAK A1 Symbol Value IF(AV) 2x8A VRRM 400 V Tj (max) 175 °C VF (typ) 0.9 V trr (typ) 25 ns Features     Very low switching losses High frequency and/or high pulsed current operation High junction temperature ECOPACK®2 compliant component for D²PAK on demand November 2016 DocID13391 Rev 2 This is information on a product in full production. 1/12 www.st.com Characteristics 1 STTH16R04C Characteristics Table 2: Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 400 V IF(RMS) Forward rms current 30 A IF(AV) Average forward current δ = 0.5, square wave TC = 150 °C Per diode 8 TC = 145 °C Per device 16 IFSM Surge non repetitive forward current tp = 10 ms sinusoidal Tstg Tj A 120 A Storage temperature range -65 to +175 °C Maximum operating junction temperature range -40 to +175 °C Table 3: Thermal parameter Symbol Rth(j-c) Rth(c) Parameter Max. value Per diode 2 Per device 1.15 Junction to case Unit °C/W Coupling 0.3 °C/W When the diodes 1 and 2 are used simultaneously: ΔTj(diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c) Table 4: Static electrical characteristics (per diode) Symbol IR(1) Parameter Test conditions Reverse leakage current Tj = 25 °C Tj = 125 °C VR = VRRM Tj = 25 °C Tj = 100 °C VF(2) Forward voltage drop IF = 8 A test: tp = 380 µs, δ < 2% 10 10 100 Tj = 150 °C - 0.9 1.1 Tj = 25 °C IF = 16 A P = 0.83 x IF(AV) + 0.034 x IF2(RMS) DocID13391 Rev 2 Unit µA 1.5 1.3 To evaluate the conduction losses, use the following equation: 2/12 - Max. 1.05 Notes: test: tp = 5 ms, δ < 2% - - Tj = 150 °C (2)Pulse Typ. - Tj = 100 °C (1)Pulse Min. 1.75 - 1.25 1.55 - 1.12 1.37 V STTH16R04C Characteristics Table 5: Dynamic electrical characteristics (per diode) Symbol Parameter Test conditions IF = 1 A VR = 30 V dIF/dt = -50 A/µs trr IRM Sfactor tfr Reverse recovery time Tj = 125 °C Softness factor Forward recovery time Tj = 25 °C VFP Forward recovery voltage Typ. Max. - 35 50 Tj = 25 °C IF = 1 A VR = 30 V dIF/dt = -100 A/µs Reverse recovery current Min. IF = 8 A VR = 320 V dIF/dt = -200 A/µs ns - 25 35 - 5.5 8 - 0.4 IF = 8 A VFR = 1.1 x VF(max) dIF/dt = 100 A/µs - IF = 8 A dIF/dt = 100 A/µs - DocID13391 Rev 2 Unit 150 2.9 A ns V 3/12 Characteristics 1.1 STTH16R04C Characteristics (curves) Figure 1: Conduction losses versus average current (per diode) Figure 2: Forward voltage drop versus forward current (per diode) IF(A) P(W) 13 200 12 δ=0.05 δ=0.1 δ=0.5 δ=0.2 δ=1 180 11 10 160 9 140 8 TJ=150°C (Maximum values) 120 7 80 5 4 60 T 3 40 2 1 δ=tp/T IF(AV)(A) 0 1 2 3 4 5 6 7 8 9 10 TJ=25°C (Maximum values) 20 tp 0 11 Z th(j-c) /Rth(j-c) VF(V) 0 0.0 Figure 3: Relative variation of thermal impedance junction to case versus pulse duration 1.0 TJ=150°C (Typical values) 100 6 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 Figure 4: Peak reverse recovery current versus dIF/dt (typical values, per diode) IRM(A) 12 IF= 8 A VR=320 V 11 10 9 Single pulse TO-220AB D²PAK 8 7 6 Tj=125 °C 5 4 3 Tj=25 °C 2 1 t p(s) 0.1 dIF/dt(A/µs) 0 1.E-03 1.E-02 1.E-01 1.E+00 Figure 5: Reverse recovery time versus dIF/dt (typical values, per diode) 10 100 1000 Figure 6: Reverse recovery charges versus dIF/dt (typical values, per diode) 200 Qrr (nC) IF= 8 A VR =320 V 180 160 140 Tj=125 °C 120 100 80 60 Tj=25 °C 40 20 dIF/dt(A/µs) 0 10 4/12 DocID13391 Rev 2 100 1000 STTH16R04C Characteristics Figure 7: Relative variations of dynamic parameters versus junction temperature (reference: Tj = 125 °C) Figure 8: Transient peak forward voltage versus dIF/dt (typical values, per diode) V FP(V) 5.0 1.4 IF=8 A Tj=125 °C 4.5 IF = 8 A VR =320 V 1.2 4.0 3.5 1.0 3.0 IRM 0.8 2.5 0.6 2.0 Qrr 0.4 1.5 1.0 0.2 0.5 Tj (°C) 0.0 25 50 75 100 125 150 0 Figure 9: Forward recovery time versus dIF/dt (typical values, per diode) 700 dI F/dt(A/µs) 0.0 50 100 150 200 250 300 350 400 450 Figure 10: Junction capacitance versus reverse voltage applied (typical values, per diode) t fr (ns) IF=8 A Vfr =1.1 x VF max. Tj=125°C 600 500 400 300 200 100 dIF/dt(A/µs) 0 0 100 200 300 400 500 Figure 11: Thermal resistance junction to ambient versus copper surface under tab 80 Rth(j-a) (°C/W) D²PAK 70 60 50 40 30 20 Epoxy printed board FR4, eCU= 35 µm 10 SCu(cm²) 0 0 5 10 15 500 20 DocID13391 Rev 2 25 30 35 40 5/12 Package information 2 STTH16R04C Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.     6/12 Cooling method: by conduction (C) Epoxy meets UL 94,V0 Recommended torque value: 0.55 N·m (for TO-220AB) Maximum torque value: 0.7 N·m (for TO-220AB) DocID13391 Rev 2 Package information STTH16R04C 2.1 D²PAK package information Figure 12: D²PAK package outline This package drawing may slightly differ from the physical package. However, all the specified dimensions are guaranteed. DocID13391 Rev 2 7/12 Package information STTH16R04C Table 6: D²PAK package mechanical data Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A 4.36 4.60 0.172 0.181 A1 0.00 0.25 0.000 0.010 b 0.70 0.93 0.028 0.037 b2 1.14 1.70 0.045 0.067 c 0.38 0.69 0.015 0.027 c2 1.19 1.36 0.047 0.053 D 8.60 9.35 0.339 0.368 D1 6.90 8.00 0.272 0.311 D2 1.10 1.50 0.043 0.060 E 10.00 10.55 0.394 0.415 E1 8.10 8.90 0.319 0.346 E2 6.85 7.25 0.266 0.282 e 2.54 typ. 0.100 e1 4.88 5.28 0.190 0.205 H 15.00 15.85 0.591 0.624 J1 2.49 2.90 0.097 0.112 L 1.90 2.79 0.075 0.110 L1 1.27 1.65 0.049 0.065 L2 1.30 1.78 0.050 0.070 R V2 0.4 typ. 0° 0.015 8° 0° Figure 13: D²PAK recommended footprint (dimensions in mm) 8/12 DocID13391 Rev 2 8° Package information STTH16R04C 2.2 TO-220AB package information Figure 14: TO-220AB package outline DocID13391 Rev 2 9/12 Package information STTH16R04C Table 7: TO-220AB package mechanical data Dimensions Ref. Millimeters Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.240 0.035 b1 1.14 1.70 0.045 0.067 c 0.48 0.70 0.019 0.028 D 15.25 15.75 0.600 0.620 D1 10/12 Inches 1.27 typ. 0.050 typ. E 10.00 10.40 0.394 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.195 0.203 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.260 J1 2.40 2.72 0.094 0.107 L 13.00 14.00 0.512 0.551 L1 3.50 3.93 0.138 0.155 L20 16.40 typ. 0.646 typ. L30 28.90 typ. 1.138 typ. θP 3.75 3.85 0.148 0.152 Q 2.65 2.95 0.104 0.116 DocID13391 Rev 2 Ordering information STTH16R04C 3 Ordering information Table 8: Ordering information Order code 4 Marking Package Weight Base qty. Delivery mode STTH16R04CT STTH16R04CT TO-220AB 1.9 g 50 Tube STTH16R04CG-TR STTH16R04CG D2PAK 1.38 g 1000 Tape and reel Revision history Table 9: Document revision history Date Revision 31-Mar-2007 1 First issue. 2 Removed device in TO-220FPAB. Updated features, Table 1: "Device summary" and package silhouettes in cover page. Updated Section 1: "Characteristics", and Section 3: "Ordering information". Updated Section 2.1: "D²PAK package information". 02-Nov-2016 Changes DocID13391 Rev 2 11/12 STTH16R04C IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2016 STMicroelectronics – All rights reserved 12/12 DocID13391 Rev 2