STTH200R04TV1

STTH200R04TV Ultrafast recovery diode Main product characteristics IF(AV) VRRM Tj VF (typ) trr (typ) 2 x 100 A 400 V 150° C 0.87 V 40 ns A1 K1 A2 K2 A1 Features and benefits ■ ■ ■ ■ ■ K1 A2 K2 ISOTOP STTH200R04TV1 Ultrafast Very low switching losses High frequency and high pulsed current operation Low leakage current Insulated package: – ISOTOP Electrical insulation = 2500 VRMS Capacitance = 45 pF Order codes Part Number Marking STTH200R04TV1 STTH200R04TV1 Description The STTH200R04TV series uses ST's new 400 V planar Pt doping technology. The STTH200R04 is specially suited for switching mode base drive and transistor circuits, such as welding equipment. March 2007 Rev 1 1/7 www.st.com 7 Characteristics STTH200R04TV 1 Table 1. Symbol VRRM VRSM IF(RMS) IF(AV) IFRM IFSM Tstg Tj Characteristics Absolute ratings (limiting values per diode at 25° C, unless otherwise specified) Parameter Repetitive peak reverse voltage Non repetitive peak reverse voltage RMS forward current Average forward current, δ = 0.5 Repetitive peak forward current Per diode Per diode Per package tp = 5 µs, F = 1 kHz square Tc = 80° C Tc = 65° C Value 400 400 150 100 200 2000 1000 -65 to + 150 150 Unit V V A A A A A °C °C Surge non repetitive forward current tp = 10 ms Sinusoidal Storage temperature range Maximum operating junction temperature Table 2. Thermal parameters Symbol Rth(j-c) Rth(c) Parameter Per diode Junction to case Total Coupling thermal resistance 0.30 0.1 ° C/W Value 0.50 Unit When the diodes are used simultaneously: ΔTj(diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c) Table 3. Symbol IR(1) Static electrical characteristics Parameter Reverse leakage current Test conditions Tj = 25° C Tj = 125° C Tj = 25° C VR = VRRM Min. Typ Max. 80 µA 80 800 1.35 IF = 100 A 0.95 0.87 1.2 1.1 V Unit VF(2) Forward voltage drop Tj = 100° C Tj = 150° C 1. Pulse test: tp = 5 ms, δ < 2 % 2. Pulse test: tp = 380 µs, δ < 2 % To evaluate the conduction losses use the following equation: P = 0.8 x IF(AV) + 0.003 x IF2(RMS) 2/7 STTH200R04TV Table 4. Symbol Characteristics Dynamic characteristics Parameter Test conditions IF = 1 A, dIF/dt = -50 A/µs, VR = 30 V, Tj = 25° C Min. Typ Max. 100 50 40 22 1500 0.4 1000 3.5 ns V 70 55 32 2900 A nC ns Unit trr Reverse recovery time IF = 1 A, dIF/dt = -100 A/µs, VR = 30 V, Tj = 25° C IF = 1 A, dIF/dt = -200 A/µs, VR = 30 V, Tj = 25° C IRM QRR S tfr VFP Reverse recovery current Reverse recovery charges Softness factor Forward recovery time Forward recovery voltage IF = 100 A, dIF/dt = -200 A/µs, VR = 320 V, Tj = 125° C IF = 100 A, dIF/dt = -200 A/µs, VR = 320 V, Tj = 125° C IF = 100 A, dIF/dt = -200 A/µs, VR = 320 V, Tj = 125° C IF = 100 A dIF/dt = 100 A/µs VFR = 1.5 x VFmax, Tj = 25° C IF = 100 A, dIF/dt = 100 A/µs, Tj = 25° C Figure 1. P(W) 140 120 Conduction losses versus average current δ=0.5 d=1 Figure 2. IFM(A) Forward voltage drop versus forward current 200 180 δ=0.2 δ=0.1 160 140 120 TJ=150°C (Maximum values) 100 80 60 40 20 δ=0.05 100 80 60 T TJ=150°C (Typical values) 40 IF(AV)(A) 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 TJ=25°C (Maximum values) δ=tp/T tp 20 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VFM(V) 1.6 1.8 Figure 3. Relative variation of thermal impedance junction to case versus pulse duration Figure 4. Peak reverse recovery current versus dIF/dt (typical values) Zth(j-c)/Rth(j-c) 1.0 Single pulse ISOTOP 50 45 40 35 30 25 20 15 10 IRM(A) IF= 100A VR=320V Tj=125 °C Tj=25 °C tp(s) 0.1 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 5 0 10 100 dIF/dt(A/µs) 1000 3/7 Characteristics STTH200R04TV Figure 5. tRR(ns) Reverse recovery time versus dIF/dt (typical values) IF= 100A VR=320V Figure 6. 5000 4500 4000 3500 Reverse recovery charges versus dIF/dt (typical values) IF=100A VFR=1.5 x V F max. Tj=125°C tFR(ns) 300 275 250 225 200 175 150 125 100 75 50 25 0 Tj=125 °C 3000 2500 2000 Tj=25 °C 1500 1000 dIF/dt(A/µs) 10 100 1000 500 0 0 100 dIF/dt(A/µs) 200 300 400 500 Figure 7. Relative variations of dynamic parameters versus junction temperature Figure 8. Transient peak forward voltage versus dIF/dt (typical values) 1.4 1.2 1.0 0.8 0.6 QRR [Tj]/QRR [Tj = 125° C] and IRM [Tj]/IRM [Tj = 125° C] IF= 100A VR=320V VFp(V) 12 11 10 9 8 IF=100A Tj=125°C IRM 7 6 5 QRR 4 3 2 0.4 0.2 T j(°C) 0.0 25 50 75 100 125 150 1 0 0 50 100 150 200 dIF/dt(A/µs) 250 300 350 400 450 500 Figure 9. Forward recovery time versus dIF/dt Figure 10. Junction capacitance versus (typical values) reverse voltage applied (typical values) C(pF) 10000 IF=100A VFR=1.1 x V F max. Tj=125°C 5000 4500 4000 3500 3000 2500 2000 1500 1000 500 0 tFR(ns) F=1MHz VOSC=30mVRMS Tj=25°C 1000 dIF/dt(A/µs) 100 0 100 200 300 400 500 VR(V) 1 10 100 1000 4/7 STTH200R04TV Package information 2 Package information Epoxy meets UL94, V0 Cooling method: by conduction (C) Table 5. ISOTOP dimensions Dimensions Ref. Millimeters Min. E G2 Inches Min. 0.465 0.350 0.307 0.030 0.077 1.488 1.240 0.990 0.939 Max. 0.480 0.358 0.323 0.033 0.081 1.504 1.248 1.004 0.951 Max. 12.20 9.10 8.20 0.85 2.05 38.20 31.70 25.50 24.15 A C 11.80 8.90 7.8 0.75 1.95 37.80 31.50 25.15 23.85 A1 A A1 C2 E2 B C C2 F1 F D D1 E P1 E1 G D1 D S E2 G 24.80 typ. 14.90 12.60 3.50 4.10 4.60 4.00 4.00 30.10 15.10 12.80 4.30 4.30 5.00 4.30 4.40 30.30 0.976 typ. 0.587 0.496 0.138 0.161 0.181 0.157 0.157 1.185 0.594 0.504 0.169 0.169 0.197 0.69 0.173 1.193 B G1 G2 ØP G1 E1 F F1 P P1 S In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 5/7 Ordering information STTH200R04TV 3 Ordering information Part Number STTH200R04TV1 Marking STTH200R04TV1 Package ISOTOP Weight 27 g Base qty 10 Delivery mode Tube 4 Revision history Date 31-Mar-2007 Revision 1 First issue Description of Changes 6/7 STTH200R04TV Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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