STTH2R02UY

STTH2R02-Y Datasheet Automotive 200 V, 2 A ultrafast recovery diode A K Features • • • • • • • A K SMB AEC-Q101 qualified Very low conduction losses Negligible switching losses Low forward and reverse recovery times High junction temperature PPAP capable ECOPACK2 compliant Applications • • • • High frequency inverters Freewheeling diode Polarity protection Reverse battery protection Description This 2 A, 200 V uses ST's 200 V planar Pt doping technology, and it is specially suited for switching mode base drive and transistor circuits. Product status STTH2R02-Y Product summary Symbol Value IF(AV) 2A VRRM 200 V T j(max.) 175 °C VF(typ.) 0.7 V trr(typ.) 15 ns DS6945 - Rev 3 - July 2020 For further information contact your local STMicroelectronics sales office. www.st.com STTH2R02-Y Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified) Symbol Parameter VRRM Repetitive peak reverse voltage (Tj = -40 °C to +175 °C) IFRM Repetitive peak forward current IF(RMS) tp = 5 μs, f = 5 kHz Forward rms current Value Unit 200 V 60 A 60 A IF(AV) Average forward current δ = 0.5, square wave TL = 90 °C 2 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 75 A Tstg Storage temperature range -65 to +175 °C Operating junction temperature range (1) -40 to +175 °C Tj 1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Table 2. Thermal resistance parameter Symbol Rth(j-l) Parameter Max. value Unit 30 °C/W Junction to lead For more information, please refer to the following application note : • AN5088 : Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics Symbol IR(1) Parameter Reverse leakage current Test conditions Tj = 25 °C Tj = 125 °C Tj = 25 °C VF(2) Forward voltage drop Min. VR = VRRM IF = 6 A Tj = 25 °C Tj = 100 °C Tj = 150 °C IF = 2 A Typ. - Max. 3 2 - 20 Unit µA 1.20 - 0.89 1.00 - 0.76 0.85 - 0.70 0.80 V 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses, use the following equation: P = 0.68 x IF(AV) + 0.06 x IF2(RMS) For more information, please refer to the following application notes related to the power losses : • AN604: Calculation of conduction losses in a power rectifier • AN4021: Calculation of reverse losses on a power diode DS6945 - Rev 3 page 2/10 STTH2R02-Y Characteristics Table 4. Dynamic characteristics (Tj = 25 °C unless otherwise specified) Symbol trr IRM tfr VFP DS6945 - Rev 3 Parameters Min. Typ. Max. IF = 1 A, dIF/dt = -50 A/μs, VR = 30 V - 23 30 IF = 1 A, dIF/dt = -100 A/μs, VR = 30 V - 15 20 Reverse recovery current IF = 2 A, dIF/dt = -200 A/μs, VR = 160 V, Tj = 125 °C - 3 4 Forward recovery time IF = 2 A, dIF/dt = 100 A/μs, VFR = 1.1 VF(max.) - 40 ns Forward recovery voltage IF = 2 A, dIF/dt = 100 A/μs - 2.0 V Reverse recovery time Test conditions Unit ns A page 3/10 STTH2R02-Y Characteristics (curves) 1.1 Characteristics (curves) Figure 2. Average forward power dissipation versus average forward current Figure 1. Peak current versus duty cycle 100 IM (A) PF(AV)(W) 2.4 T 80 2.0 δ = tp/T = 0.05 tp = 0.1 = 0.2 = 0. =1 1.6 60 1.2 40 P = 5W P = 2W 20 0.4 δ 0 0.0 0.1 0.2 0.3 T 0.8 P = 1W 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Figure 3. Forward voltage drop versus forward current (typical values) IF(AV)(A) 0.0 0.0 0.2 IF(A) 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 IF(A) 100.00 10.00 10.00 1.00 Tj = 150 °C T j = 25 °C 0.10 0.2 0.4 0.6 0.8 1.0 Tj = 150 °C T j = 25 °C 0.10 VF(V) 0.01 0.0 0.6 Figure 4. Forward voltage drop versus forward current (maximum values) 100.00 1.00 0.4 tp =tp/T 1.2 1.4 VF(V) 0.01 0.0 1.6 Figure 5. Relative variation of thermal impedance junction to lead versus pulse duration (SMB) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Figure 6. Junction capacitance versus reverse voltage applied (typical values) Zth(j-l) / Rth(j-l) C(pF) 1.0 100 0.9 F = 1 MHz Vosc= 30 mV RMS Tj = 25 °C 0.8 0.7 0.6 0.5 10 0.4 0.3 0.2 0.1 1.E-04 DS6945 - Rev 3 VR(V) tp(s) 0.0 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1 1 10 100 1000 page 4/10 STTH2R02-Y Characteristics (curves) Figure 7. Reverse recovery charges versus dIF/dt (typical values) Figure 8. Reverse recovery time versus dIF/dt (typical values) t rr (nC) QRR (nC) 60 60 VR = 160 V Tj = 125 °C IF = IF(AV) 50 VR = 160 V Tj = 125 °C IF = IF(AV) 50 40 40 30 30 20 20 10 10 dIF/dt(A/µs) dIF/dt(A/µs) 0 0 0 100 200 300 400 0 500 Figure 9. Peak reverse recovery current versus dIF/dt (typical values) 200 300 400 500 Figure 10. Relative variations of dynamic parameters versus junction temperature IRM(A) 1.4 6 VR = 160 V Tj = 125 °C IF = IF(AV) 5 100 1.2 VR = 160 V IF = IF(AV) Reference: Tj = 125 °C 1.0 IRM 4 0.8 3 QRR 0.6 2 0.4 0.2 1 dIF/dt(A/µs) 0.0 0 0 100 200 300 400 25 500 50 75 100 125 150 Figure 11. Thermal resistance junction to ambient versus copper surface under each lead (typical values) Rth(j-a)(°C/W) 150 Epoxy printed circuit board, copper thickness = 70 µm SMB 120 90 60 30 SCU(cm²) 0 0.0 DS6945 - Rev 3 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 page 5/10 STTH2R02-Y Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 2.1 SMB package information • • Epoxy meets UL94, V0 Lead-free package Figure 12. SMB package outline E1 D E A1 C A2 L DS6945 - Rev 3 b page 6/10 STTH2R02-Y SMB package information Table 5. SMB package mechanical data Dimensions Millimeters Ref. Inches (for reference only) Min. Max. Min. Max. A1 1.90 2.45 0.074 0.097 A2 0.05 0.20 0.001 0.008 b 1.95 2.20 0.076 0.087 c 0.15 0.40 0.005 0.016 D 3.30 3.95 0.129 0.156 E 5.10 5.60 0.200 0.221 E1 4.05 4.60 0.159 0.182 L 0.75 1.50 0.029 0.060 Figure 13. SMB recommended footprint 1.62 2.60 1.62 (0.064) (0.102) (0.064) 2.18 (0.086) 5.84 (0.230) DS6945 - Rev 3 page 7/10 STTH2R02-Y Ordering information 3 Ordering information Figure 14. Ordering information scheme STTH 2 R 02 XX Ultrafast switching diode Average forward current 2=2A Model R Repetitive peak reverse voltage 02 = 200 V Package U = SMB in tape and reel Y = Automotive grade Table 6. Ordering information DS6945 - Rev 3 Order code Marking Package Weight Base qty. Delivery mode STTH2R02UY R2UY SMB 0.110 g 2500 Tape and reel page 8/10 STTH2R02-Y Revision history Table 7. Document revision history Date DS6945 - Rev 3 Revision Changes 20-Oct-2010 1 First issue. 02-Feb-2017 2 Updated Figure 4: "Relative variation of thermal impedance junction to case versus pulse duration". 10-Jul-2020 3 Updated Section 1.1 Characteristics (curves) and added Section Applications. Minor text changes. page 9/10 STTH2R02-Y IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2020 STMicroelectronics – All rights reserved DS6945 - Rev 3 page 10/10