STTH8R06-Y
Automotive Turbo 2 ultrafast high voltage rectifier
Features
■
Ultrafast switching
■
Low reverse recovery current
■
Low thermal resistance
■
Reduces switching losses
■
K
A
NC
AEC-Q101 qualified
D2PAK
STTH8R06G-Y
Description
The STTH8R06, which uses ST Turbo 2 600 V
technology, is specially suited as a boost diode in
continuous mode power factor correction and
hard switching conditions. This device is also
intended for use as a free wheeling diode in
power supplies and other power switching
applications.
November 2011
Table 1.
Doc ID 022291 Rev 1
Device summary
Symbol
Value
IF(AV)
8A
VRRM
600 V
Tj
175 °C
VF (typ)
1.5 V
trr (max)
45 ns
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www.st.com
8
Characteristics
1
STTH8R06-Y
Characteristics
Table 2.
Absolute ratings (limiting values)
Symbol
Parameter
Unit
VRRM
Repetitive peak reverse voltage
600
V
IF(RMS)
Forward rms current
40
A
IF(AV)
Average forward current δ = 0.5
Tc = 135 °C
8
A
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
90
A
Tstg
Storage temperature range
-65 to + 175
°C
Operating junction temperature range
-40 to + 175
°C
Tj
Table 3.
Thermal resistance
Symbol
Rth(j-c)
Table 4.
Parameter
Value (max)
Unit
1.9
°C/W
Junction to case
Static electrical characteristics
Symbol
Parameter
Test conditions
IR
Reverse leakage current
VF
Forward voltage drop
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Min.
Typ.
Max.
Unit
30
VR = VRRM
µA
35
400
3.2
IF = 8 A
To evaluate the conduction losses use the following equation:
P = 1.35 x IF(AV) + 0.075 IF2(RMS)
2/8
Value
Doc ID 022291 Rev 1
V
1.5
1.95
STTH8R06-Y
Table 5.
Characteristics
Dynamic characteristics
Symbol
Parameter
Test conditions
Reverse recovery time
trr
IRM
Tj = 25 °C
Min.
Typ.
IF = 0.5 A,
Irr = 0.25 A, IR =1 A
25
IF = 1 A,
dIF/dt = -50 A/µs,
VR = 30 V
45
5.5
Tj = 125 °C
S factor Softness factor
IF = 8 A, VR = 400 V,
dIF/dt = -200 A/µs
nC
IF = 8 A,
dIF/dt = 64 A/µs
VFR = 2.5 V
Tj = 25 °C
Forward recovery voltage
Figure 1.
A
150
Forward recovery time
VFP
7.2
0.4
Reverse recovery charges
tfr
Unit
ns
Reverse recovery current
Qrr
Max.
Average forward power dissipation Figure 2.
versus average forward current
200
ns
5
V
Forward voltage drop versus
forward current
IFM(A)
P(W)
32
24
δ = 0.1
δ = 0.2
δ = 0.5
δ = 0.05
28
Tj=125 °C
(Maximum values)
20
24
δ=1
16
12
Tj=25 °C
(Maximum values)
Tj=125 °C
(Typical values)
20
16
12
8
T
8
4
4
IF(AV)(A)
δ=tp/T
0
0
1
Figure 3.
2
3
4
5
6
7
8
9
0
10
11
0.0
0.5
1.0
Relative variation of thermal
Figure 4.
impedance junction to case versus
pulse duration
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
Peak reverse recovery current
versus dIF/dt (typical values)
IRM(A)
Zth(j-c)/Rth(j-c)
1.0
10
0.9
9
0.8
8
0.7
7
0.6
6
0.5
5
0.4
4
0.3
0.2
VFM(V)
tp
IF=I F(AV)
VR=400 V
Tj=125 °C
3
Single pulse
2
0.1
0.0
1.E-04
1
tp(s)
dIF/dt(A/µs)
0
1.E-03
1.E-02
1.E-01
1.E+00
0
50
Doc ID 022291 Rev 1
100
150
200
250
300
350
400
450
500
3/8
Characteristics
Figure 5.
STTH8R06-Y
Reverse recovery time versus
dIF/dt (typical values)
Figure 6.
trr(ns)
Reverse recovery charges
versus dIF/dt (typical values)
Qrr(nC)
90
200
IF=I F(AV)
VR=400 V
Tj=125 °C
80
70
IF=I F(AV)
VR=400 V
Tj=125 °C
180
160
140
60
120
50
100
40
80
30
60
20
40
10
20
dIF/dt(A/µs)
dIF/dt(A/µs)
0
0
0
50
Figure 7.
100
150
200
250
300
350
400
450
500
Reverse recovery softness factor
versus dIF/dt (typical values)
S factor
50
Figure 8.
100
150
200
250
300
350
400
450
500
Relative variations of dynamic
parameters versus junction
temperature
2.50
0.6
IF=I F(AV)
VR=400 V
Tj=125 °C
0.5
0
2.25
IF=I F(AV)
VR=400 V
Reference: T j=125 °C
SFACTOR
2.00
1.75
0.4
1.50
1.25
0.3
1.00
0.75
0.2
IRM
0.50
0.1
0.25
dIF/dt(A/µs)
0
4/8
50
100
150
200
250
300
QRR
Tj(°C)
0.00
0.0
350
400
450
500
25
Doc ID 022291 Rev 1
50
75
100
125
STTH8R06-Y
Figure 9.
12
Characteristics
Transient peak forward voltage
versus dIF/dt (typical values)
Figure 10. Forward recovery time versus
dIF/dt (typical values)
VFP(V)
160
IF=I F(AV)
Tj=125 °C
tFR(ns)
IF=I F(AV)
VFR=2.5V
Tj=125 °C
140
10
120
8
100
80
6
60
4
40
2
20
dIF/dt(A/µs)
dIF/dt(A/µs)
0
0
0
50
100
150
200
250
300
350
400
450
0
500
Figure 11. Junction capacitance versus
reverse voltage applied
(typical values)
50
100
150
200
250
300
350
400
450
500
Figure 12. Thermal resistance junction to
ambient versus copper surface
under tab
Rth(j-a)(°C/W)
C(pF)
80
100
F=1 MHz
VOSC=30 mVRMS
Tj=25 °C
Epoxy printed circuit board FR4,
copper thickness = 35 µm
70
60
50
40
30
20
10
VR(V)
10
S(Cu)(cm²)
0
1
10
100
1000
0
Doc ID 022291 Rev 1
5
10
15
20
25
30
35
40
5/8
Package information
2
STTH8R06-Y
Package information
●
Epoxy meets UL94, V0
●
Lead-free package
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Table 6.
D2PAK dimensions
Dimensions
Ref.
A
E
C2
L2
D
L
L3
A1
B2
R
C
B
M
*
V2
* FLAT ZONE NO LESS THAN 2mm
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.70
0.93
0.027
0.037
B2
1.14
1.70
0.045
0.067
C
0.45
0.60
0.017
0.024
C2
1.23
1.36
0.048
0.054
D
8.95
9.35
0.352
0.368
E
10.00
10.40
0.393
0.409
G
4.88
5.28
0.192
0.208
L
15.00
15.85
0.590
0.624
L2
1.27
1.40
0.050
0.055
L3
1.40
1.75
0.055
0.069
M
2.40
3.20
0.094
0.126
R
V2
0.40 typ.
0°
16.90
10.30
5.08
1.30
8.90
Doc ID 022291 Rev 1
3.70
0.016 typ.
8°
Figure 13. D2PAK footprint (dimensions in mm)
6/8
Inches
Min.
G
A2
Millimeters
0°
8°
STTH8R06-Y
3
Ordering information
Ordering information
Table 7.
4
Ordering information
Order code
Marking
Package
Weight
Base qty
Delivery mode
STTH8R06GY-TR
STTH8R06GY
D2PAK
1.48 g
1000
Tape and reel
Revision history
Table 8.
Document revision history
Date
Revision
03-Nov-2011
1
Changes
Initial release.
Doc ID 022291 Rev 1
7/8
STTH8R06-Y
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