STP130NS04ZB STB130NS04ZB - STW130NS04ZB
N-CHANNEL CLAMPED - 7 mΩ - 80A TO-220/D²PAK/TO-247 FULLY PROTECTED MESH OVERLAY™ MOSFET
Table 1: General Features
TYPE STP130NS04ZB STB130NS04ZB STW130NS04ZB
s s s s
Figure 1: Package
RDS(on) < 9 mΩ < 9 mΩ < 9 mΩ ID 80 A 80 A 80 A
3
3 1 2
VDSS CLAMPED CLAMPED CLAMPED
TYPICAL RDS(on) = 7 mΩ 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE 175°C MAXIMUM JUNCTION TEMPERATURE
1
TO-220
D²PAK
DESCRIPTION This fully clamped MOSFET is produced by using the latest advanced Company’s Mesh Overlay process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions such as those encountered in the automotive environment .Any other application requiring extra ruggedness is also recommended.
3 2 1
TO-247
Figure 2: Internal Schematic Diagram
APPLICATIONS s HIGH SWITCHING CURRENT s LINEAR APPLICATIONS
Table 2: Order Codes
Sales Type STP130NS04ZB STB130NS04ZBT4 STW130NS04ZB Marking P130NS04ZB B130NS04ZB W130NS04ZB Package TO-220 D²PAK TO-247 Packaging TUBE TAPE & REEL TUBE
Rev. 2 February 2005 1/12
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Table 3: Absolute Maximum ratings
Symbol VDS VDG VGS ID ID IDG IGS IDM ( ) PTOT VESD(G-S) Tj Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Gate Current (continuous) Gate Source Current (continuous) Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate-Source ESD(HBM-C=100 pF, R=1.5 KΩ) Max Operating Junction Temperature Storage Temperature Value CLAMPED CLAMPED CLAMPED 80 60 ± 50 ± 50 320 300 2.0 4 -55 to 175 Unit V V V A A mA mA A W W/°C KV °C
( ) Pulse width limited by safe operating area
Table 4: Thermal Data
TO-220 Rthj-case Rthj-pcb (*) Rthj-a Tl Thermal Resistance Junction-case Thermal Resistance Junction-pcb Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose (1.6 mm from case, for 10 sec) Max Max Max -62.5 300 D²PAK 0.50 35 --50 °C TO-247 Unit °C/W °C/W
(*)When mounted on 1 inch² FR4 2oZ Cu
Table 5: Avalanche Characteristics
Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 30 V) Max Value 80 500 Unit A mJ
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ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 6: On/Off
Symbol V(BR)DSS IDSS IGSS VGSS VGS(th) RDS(on) Parameter Clamped Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate-Source Breakdown Voltage Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 1 mA, VGS = 0 -40 < Tj < 175 °C VDS = 16 V,Tj = 25 °C VDS = 16 V,Tj = 125 °C VGS = ±10 V,Tj = 25 °C IGS = ±100 µA VDS = VGS = ID = 1 mA VGS = 10 V ,ID = 40 A 18 2 7 4 9 Min. 33 10 100 10 Typ. Max. Unit V µA µA µA V V mΩ
Table 7: Dynamic
Symbol gfs Ciss Coss Crss td(on) tf td(off) tf Qg Qgs Qgd Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Fall Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDS = 15 V, ID = 40 A VDS = 25 V, f = 1MHz, VGS = 0 Min. Typ. 50 2700 1275 285 40 220 170 100 80 20 27 105 Max. Unit S pF pF pF ns ns ns ns nC nC nC
VDD = 17.5 V, ID = 40 A, RG = 4.7 Ω, VGS = 10 V (see Figure 15) VDD = 20 V, ID = 80 A, VGS = 10 V (see Figure 17)
Table 8: Source Drain Diode
Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 80 A, VGS = 0 ISD = 80 A, di/dt = 100A/µs VDD = 25V, Tj = 150°C (see Figure 16) 90 0.18 4 Test Conditions Min. Typ. Max. 80 320 1.5 Unit A A V ns µC A
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (2) Pulse width limited by safe operating area.
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Figure 3: Safe Operating Area Figure 6: Thermal Impedance
Figure 4: Output Characteristics
Figure 7: Transfer Characteristics
Figure 5: Transconductance
Figure 8: Static Drain-source On Resistance
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Figure 9: Gate Charge vs Gate-source Voltage Figure 12: Normalized On Resistance vs Temperature
Figure 10: Normalized Gate Thereshold Voltage vs Temperature
Figure 13: Source-drain Diode Forward Characteristics
Figure 11: Capacitance Variations
Figure 14: Normalized BVDSS vs Temperature
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Figure 15: Switching Times Test Circuit For Resistive Load Figure 17: Gate Charge Test Circuit
Figure 16: Test Circuit For Diode Recovery Behaviour
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TO-220 MECHANICAL DATA
DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
øP
Q
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TO-263 (D 2PAK) MECHANICAL DATA
mm. DIM. MIN. A A1 b b2 c c2 D D1 E e H L L1 L2 L4 V2 13.10 1.30 1.15 1.27 2.70 0° 4.32 0.00 0.71 1.15 0.46 1.22 8.89 8.01 10.04 2.54 13.70 1.70 1.39 1.77 3.10 8° 0.515 0.051 0.045 0.050 0.106 0° 10.28 9.02 TYP MAX. 4.57 0.25 0.91 1.40 0.61 1.40 9.40 MIN. 0.178 0.00 0.028 0.045 0.018 0.048 0.350 0.315 0.395 0.010 0.540 0.067 0.054 0.069 0.122 8° 0.404 0.355 TYP. MAX. 0.180 0.009 0.350 0.055 0.024 0.055 0.370 inch
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TO-247 MECHANICAL DATA
mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620
DIM. A A1 b b1 b2 c D E e L L1 L2 øP øR S
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D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956
BASE QTY 1000
* on sales type
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Table 9: Revision History
Date 10-June-2004 14-Jan-2005 Revision 1 2 Description of Changes First Release. Inserted D²PAK, Complete version.
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
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