STW24NM60N

STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N N-channel 600 V, 0.168 Ω typ., 17 A MDmesh™ II Power MOSFETs in TO-220FP, I²PAK, TO-220 and TO-247 packages Datasheet − production data Features TAB Order codes 3 1 I2PAK TO-220FP RDS(on) max. ID 650 V 0.19 Ω 17 A STF24NM60N 3 12 2 VDS @Tjmax STI24NM60N STP24NM60N 7$% STW24NM60N • 100% avalanche tested    3 2 1 TO-220 • Low input capacitance and gate charge • Low gate input resistance TO-247 Figure 1. Internal schematic diagram Applications • Switching applications 'RU7$% Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. * 6 $0Y Table 1. Device summary Order code Marking Packages STF24NM60N TO-220FP I2PAK STI24NM60N 24NM60N Tube STP24NM60N TO-220 STW24NM60N TO-247 July 2014 This is information on a product in full production. Packaging DocID18047 Rev 4 1/20 www.st.com Contents STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 2/20 .............................................. 9 4.1 TO-220FP, STF24NM60N . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.2 I2PAK, STI24NM60N . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.3 TO-220, STP24NM60N . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 4.4 TO-247, STW24NM60N . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 DocID18047 Rev 4 STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol VGS Parameter I2PAK TO-220 TO-247 Unit TO-220FP Gate- source voltage ± 30 V (1) A ID Drain current (continuous) at TC = 25 °C 17 17 ID Drain current (continuous) at TC = 100 °C 11 11 (1) A IDM (2) Drain current (pulsed) 68 68 (1) A PTOT Total dissipation at TC = 25 °C 125 30 W dv/dt(3) Peak diode recovery voltage slope VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s; TC=25 °C) TJ Tstg Operating junction temperature Storage temperature 15 V/ns 2500 V -55 to 150 °C 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. ISD ≤ 17 A, di/dt ≤ 400 A/µs, peak VDS ≤ V(BR)DSS, VDD = 80% V(BR)DSS Table 3. Thermal data Value Symbol Parameter Rthj-case Thermal resistance junction-case max. Rthj-amb Thermal resistance junction-ambient max. TO-220FP I2PAK TO-220 TO-247 4.17 1 62.5 Unit °C/W 50 °C/W Table 4. Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or notrepetitive (pulse width limited by TJ max) 6 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) 300 mJ DocID18047 Rev 4 3/20 20 Electrical characteristics 2 STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 5. On /off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage IDSS Zero gate voltage drain current IGSS Gate-body leakage current VGS = 0, ID = 1 mA Min. Typ. Max. 600 Unit V VGS = 0, VDS = 600 V 1 µA VGS = 0, VDS = 600 V, TC=125 °C 100 µA VDS = 0, VGS = ± 25 V ±100 nA 3 4 V 0.168 0.19 Ω Min. Typ. Max. Unit - 1330 - pF - 80 - pF 3.2 - pF VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on- resistance 2 VGS = 10 V, ID = 8 A Table 6. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq.(1) Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 - 182 - pF Rg Gate input resistance f=1 MHz open drain - 5 - Ω Qg Total gate charge - 44 - nC Qgs Gate-source charge - 7 - nC Qgd Gate-drain charge VDD = 480 V, ID = 17 A, VGS = 10 V (see Figure 19) - 24 - nC VDS = 50 V, f = 1 MHz, VGS = 0 - 1. Co(eff). is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS. 4/20 DocID18047 Rev 4 STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N Electrical characteristics Table 7. Switching times Symbol td(on) tr(v) td(off) tf(i) Parameter Test conditions Turn-on delay time VDD = 300 V, ID = 8.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 18) Voltage rise time Turn-off-delay time Fall time Min. Typ. Max Unit - 11.5 - ns - 16.5 - ns - 73 - ns - 37 - ns Table 8. Source drain diode Symbol ISD ISDM (1) VSD (2) Parameter Test conditions Min. Typ. Max Unit Source-drain current - 17 A Source-drain current (pulsed) - 68 A 1.6 V Forward on voltage ISD = 17 A, VGS = 0 - trr Reverse recovery time - 340 ns Qrr Reverse recovery charge - 4.6 µC IRRM Reverse recovery current ISD = 17 A, di/dt = 100 A/µs VDD= 60 V (see Figure 20) - 27 A ISD = 17 A, di/dt = 100 A/µs VDD= 60 V TJ = 150 °C (see Figure 20) - 404 ns - 5.7 µC - 28 A trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID18047 Rev 4 5/20 20 Electrical characteristics 2.1 STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N Electrical characteristics (curves) Figure 2. Safe operating area for TO-220FP Figure 3. Thermal impedance for TO-220FP AM07975v1 1 D S( on ) 10 O Li per m at ite io d ni by n m this ax a R rea is ID (A) 10µs 100µs 1ms 10ms Tj=150°C Tc=25°C 0.1 Sinlge pulse 0.01 0.1 10 1 100 VDS(V) Figure 4. Safe operating area for I2PAK and TO-220 Figure 5. Thermal impedance for I2PAK and TO-220 AM07976v1 D S( on ) O Li per m at ite io d ni by n m this ax a R rea is ID (A) 10 10µs 100µs 1ms 1 0.1 0.1 Tj=150°C Tc=25°C Sinlge pulse 10 1 10ms 100 VDS(V) Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 AM10327v1 n) (o DS 10 Op Lim era ite tion d by in th m is ax ar R e a is ID (A) 10µs 100µs 1ms 1 10ms Tj=150°C Tc=25°C Single pulse 0.1 0.1 6/20 1 10 100 VDS(V) DocID18047 Rev 4 STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N Figure 8. Output characteristics Electrical characteristics Figure 9. Transfer characteristics AM07977v1 ID (A) 40 AM07978v1 ID (A) VGS = 10 V 40 VDS= 20 V VGS = 7 V 30 30 VGS = 6 V 20 20 10 10 VGS = 5 V 0 0 5 10 15 20 Figure 10. Gate charge vs gate-source voltage AM07979v1 VDS VGS (V) 12 VDD=480V (V) ID= 17A 500 VDS 10 0 0 25 VDS(V) 2 4 8 6 10 VGS(V) Figure 11. Static drain-source on-resistance AM08534v1 RDS(on) (Ω) 0.176 VGS=10V 0.174 400 0.172 300 0.168 0.170 8 6 0.166 200 0.164 4 100 2 0.162 0.160 0 0 20 10 30 40 50 0 Qg(nC) Figure 12. Capacitance variations C (pF) 1000 0.158 0 5 10 15 ID(A) Figure 13. Output capacitance stored energy AM08535v1 Eoss (µJ) 9.0 Ciss 8.0 AM08536v1 7.0 6.0 100 5.0 Coss 4.0 3.0 10 2.0 Crss 1 0.1 1 10 100 VDS(V) DocID18047 Rev 4 1.0 0 0 100 200 300 400 500 600 VDS(V) 7/20 20 Electrical characteristics STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N Figure 14. Normalized gate threshold voltage vs temperature AM08537v1 VGS(th) (norm) Figure 15. Normalized on-resistance vs temperature AM08538v1 RDS(on) (norm) ID= 8 A 1.10 2.0 ID = 250 µA 1.00 1.5 0.90 1.0 0.80 0.70 -50 -25 0 25 50 75 100 TJ(°C) Figure 16. Normalized V(BR)DSS vs temperature AM09028v1 V(BR)DSS (norm) ID=1mA 1.10 0.5 -50 -25 0 25 50 75 100 TJ(°C) Figure 17. Source-drain diode forward characteristics AM10328v1 VSD (V) 1.4 1.08 TJ=-50°C 1.2 1.06 TJ=25°C 1.0 1.04 TJ=150°C 0.8 1.02 1.00 0.6 0.98 0.4 0.96 0.94 0.92 -50 -25 8/20 0.2 0 0 25 50 75 100 TJ(°C) DocID18047 Rev 4 0 2 4 6 8 10 12 14 16 ISD(A) STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N 3 Test circuits Test circuits Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 20. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 21. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 DocID18047 Rev 4 10% AM01473v1 9/20 20 Package mechanical data 4 STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/20 DocID18047 Rev 4 STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N 4.1 Package mechanical data TO-220FP, STF24NM60N Figure 24. TO-220FP drawing 7012510_Rev_K_B DocID18047 Rev 4 11/20 20 Package mechanical data STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N Table 9. TO-220FP mechanical data mm Dim. Min. Typ. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 12/20 Max. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Ø 3 3.2 DocID18047 Rev 4 STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N 4.2 Package mechanical data I2PAK, STI24NM60N Figure 25. I²PAK (TO-262) drawing 0004982_Rev_H DocID18047 Rev 4 13/20 20 Package mechanical data STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N Table 10. I²PAK (TO-262) mechanical data mm. DIM. min. 14/20 typ max. A 4.40 4.60 A1 2.40 2.72 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 c2 1.23 1.32 D 8.95 9.35 e 2.40 2.70 e1 4.95 5.15 E 10 10.40 L 13 14 L1 3.50 3.93 L2 1.27 1.40 DocID18047 Rev 4 STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N 4.3 Package mechanical data TO-220, STP24NM60N Figure 26. TO-220 type A drawing BW\SH$B5HYB7 DocID18047 Rev 4 15/20 20 Package mechanical data STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N Table 11. TO-220 type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 16/20 Max. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 DocID18047 Rev 4 STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N 4.4 Package mechanical data TO-247, STW24NM60N Figure 27. TO-247 drawing 0075325_G DocID18047 Rev 4 17/20 20 Package mechanical data STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N Table 12. TO-247 mechanical data mm. Dim. Min. Typ. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 18/20 Max. 5.60 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 DocID18047 Rev 4 5.70 STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N 5 Revision history Revision history Table 13. Document revision history Date Revision 05-Jan-2011 1 First release. 01-Jul-2011 2 Corrected Rthj-amb value (see Table 3: Thermal data) Added new package and mechanical data: TO-247. 3 Inserted device in I2PAK: updated Table 1: Device summary, Table 2: Absolute maximum ratings, Table 3: Thermal data inserted new mechanical data in Section 4: Package mechanical data 4 – – – – 22-Aug-2011 24-Jul-2014 Changes Modified: the entire typical values in Table 6 Modified: Figure 12 Updated: Section 4: Package mechanical data Minor text changes DocID18047 Rev 4 19/20 20 STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2014 STMicroelectronics – All rights reserved 20/20 DocID18047 Rev 4