STWA40N95DK5

STW40N95DK5, STWA40N95DK5 Datasheet N-channel 950 V, 120 mΩ typ., 38 A, MDmesh DK5 Power MOSFETs in TO-247 and TO-247 long leads packages Features Order code STW40N95DK5 STWA40N95DK5 1 2 3 1 2 RDS(on) max. ID 950 V 130 mΩ 38 A 3 TO-247 long leads TO-247 VDS D(2, TAB) • • Fast-recovery body diode Best RDS(on) x area • • • Low gate charge, input capacitance and resistance 100% avalanche tested Extremely high dv/dt ruggedness Applications • Switching applications G(1) Description S(3) AM01475v1_noZen These very high voltage N-channel Power MOSFETs are part of the MDmesh DK5 fast-recovery diode series. The MDmesh DK5 combines very low recovery charge (Qrr) and recovery time (trr) with an excellent improvement in RDS(on) * area and one of the most effective switching behaviors, ideal for half bridge and full bridge converters. Product status links STW40N95DK5 STWA40N95DK5 Product summary Order code STW40N95DK5 Marking 40N95DK5 Package TO-247 Packing Tube Order code STWA40N95DK5 Marking 40N95DK5 Package TO-247 long leads Packing Tube DS9918 - Rev 5 - August 2021 For further information contact your local STMicroelectronics sales office. www.st.com STW40N95DK5, STWA40N95DK5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Gate-source voltage ±30 V Drain current (continuous) at TC = 25 °C 38 Drain current (continuous) at TC = 100 °C 24 IDM(1) Drain current (pulsed) 152 A PTOT Total power dissipation at TC = 25 °C 450 W dv/dt(2) Peak diode recovery voltage slope 50 V/ns dv/dt(3) MOSFET dv/dt ruggedness 50 V/ns Tstg Storage temperature range VGS ID TJ Parameter Operating junction temperature range -55 to 150 A °C °C 1. Pulse width limited by safe operating area. 2. ISD ≤ 38 A, di/dt ≤ 400 A/μs, VDS (peak) ≤ V(BR)DSS, VDD = 760 V. 3. VDS ≤ 760 V. Table 2. Thermal data Symbol Parameter RthJC Thermal resistance, junction-to-case RthJA Thermal resistance, junction-to-ambient Value Unit 0.28 °C/W 50 °C/W Value Unit Table 3. Avalanche characteristics Symbol DS9918 - Rev 5 Parameter IAR Maximum current during repetitive or single pulse avalanche 13 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) 730 mJ page 2/14 STW40N95DK5, STWA40N95DK5 Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified. Table 4. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage Min. ID = 1 mA, VGS= 0 V Typ. 950 Zero gate voltage drain current IGSS Gate-source leakage current VDS = 0 V, VGS = ±20 V VGS(th) Gate threshold voltage VDD = VGS, ID = 100 µA RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 19 A VGS = 0 V, VDS = 950 V, TC = 125 Unit V VGS = 0 V, VDS = 950 V IDSS Max. 1 µA 100 µA ±10 µA 4 5 V 120 130 mΩ Min. Typ. Max. Unit - 3480 - pF - 235 - pF - 2.3 - pF - 371 - pF - 134 - pF - 2 - Ω - 100 - nC - 19.5 - nC - 67.6 - nC °C(1) 3 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Co(tr)(1) Equivalent capacitance time related Co(er)(2) Equivalent capacitance energy related RG Intrinsic gate resistance Qg Total gate charge Qgs Gate source charge Qgd Gate drain charge Test conditions VDS = 100 V, f = 1 MHz, VGS = 0 V VGS = 0 V, VDS = 0 to 760 V f = 1 MHz, ID = 0 A VDD = 760 V, ID = 38 A, VGS = 0 to 10 V (see Figure 14. Test circuit for gate charge behavior) 1. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 2. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. Table 6. Switching times Symbol td(on) tr td(off) tf DS9918 - Rev 5 Parameter Test conditions Min. Typ. Max. Unit Turn-on delay time VDS = 475 V, ID= 19 A, - 30 - ns Rise time RG = 4.7 Ω, VGS = 10 V - 15 - ns Turn-off delay time (see Figure 13. Test circuit for resistive load switching times and Figure 18. Switching time waveform) - 82 - ns - 11 - ns Fall time page 3/14 STW40N95DK5, STWA40N95DK5 Electrical characteristics Table 7. Source-drain diode Symbol ISD ISDM (1) VSD(2) Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 38 A Source-drain current (pulsed) - 152 A 1.5 V Forward on voltage ISD = 38 A, VGS = 0 V - trr Reverse recovery time ISD = 19 A, di/dt = 100 A/µs, - 170 ns Qrr Reverse recovery charge VDD = 60 V - 1.4 µC IRRM Reverse recovery current (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 15 A trr Reverse recovery time ISD = 19 A, di/dt = 100 A/µs, - 340 ns Qrr Reverse recovery charge VDD = 60 V, TJ = 150 °C - 5 µC Reverse recovery current (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 30 A IRRM 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%. DS9918 - Rev 5 page 4/14 STW40N95DK5, STWA40N95DK5 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 2. Thermal impedance Figure 1. Forward bias safe operating area ID (A) GADG121220161639SOA AM09125v1 K d=0.5 102 a 0.2 n) O is per lim ati ite on d in by th R is a DS (o re tp =10 µs 101 tp =100 µs 0.05 10 0.02 tp =1 ms TJ ≤ 150 °C, TC = 25 °C, Single pulse 100 0.1 -1 0.01 Zth =k * RthJC d=t p/t Single pulse tp =10 ms tp t 10-1 10-1 -2 100 101 102 103 VDS (V) 10 -4 10 Figure 3. Output characteristics ID (A) ID (A) VGS = 10, 11 V 60 -1 10 10 10 t p(s) Figure 4. Transfer characteristics GADG121220161647OCH 80 -2 -3 9V 100 8V 80 GADG121220161656TCH VDS = 20 V 60 40 7V 40 20 20 6V 0 0 4 8 12 16 VDS (V) Figure 5. Gate charge vs gate-source voltage VGS (V) GADG121220161700QVG VDS (V) 14 700 12 600 VDD = 760 V ID = 38 A 10 500 8 400 6 300 4 200 2 100 0 0 DS9918 - Rev 5 20 40 60 80 100 0 Qg (nC) 0 5 6 7 8 9 VGS (V) Figure 6. Static drain-source on-resistance RDS(on) (mΩ) GADG121220161716RID 130 VGS = 10 V 125 120 115 110 0 10 20 30 ID (A) page 5/14 STW40N95DK5, STWA40N95DK5 Electrical characteristics (curves) Figure 7. Capacitance variations C (pF) Figure 8. Normalized gate threshold voltage vs temperature VGS(th) (norm.) GADG121220161722CVR GADG121220161733VTH 1.1 104 Ciss 103 1.0 0.9 f = 1 MHz ID = 100 µA 0.8 102 Coss 101 Crss 0.7 0.6 0.5 100 10-1 100 101 VDS (V) 102 Figure 9. Normalized on-resistance vs temperature RDS(on) (norm.) GADG121220161738RON 0.4 -50 V(BR)DSS (norm.) 1.12 2.2 1.08 VGS = 10 V 1.00 1.0 0.96 0.6 0.92 0 50 100 TJ (°C) Figure 11. Source-drain diode forward characteristics VSD (V) 100 TJ (°C) GADG121220161743BDV ID = 1 mA 1.04 1.4 0.2 -50 50 Figure 10. Normalized V(BR)DSS vs temperature 2.6 1.8 0 GADG121220161748SDF 0.88 -50 0 50 100 TJ (°C) Figure 12. Maximum avalanche energy vs starting TJ EAS (mJ) GADG121220161752EAS 1.0 TJ = -50 °C 600 0.9 0.8 400 TJ = 25 °C Single pulse, ID = 13 A, VDD = 50 V 0.7 0.5 5 DS9918 - Rev 5 200 TJ = 150 °C 0.6 10 15 20 25 30 35 ISD (A) 0 -50 0 50 100 TJ (°C) page 6/14 STW40N95DK5, STWA40N95DK5 Test circuits 3 Test circuits Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A A L 100 µH fast diode B B B G RG VD 3.3 µF D + Figure 16. Unclamped inductive load test circuit 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S _ D.U.T. Vi pulse width AM01470v1 AM01471v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform ton V(BR)DSS td(on) toff td(off) tr tf VD 90% 90% IDM VDD VDD VGS 0 AM01472v1 DS9918 - Rev 5 10% 0 ID VDS 10% 90% 10% AM01473v1 page 7/14 STW40N95DK5, STWA40N95DK5 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 TO-247 package information Figure 19. TO-247 package outline aaa 0075325_10 DS9918 - Rev 5 page 8/14 STW40N95DK5, STWA40N95DK5 TO-247 package information Table 8. TO-247 package mechanical data Dim. mm Min. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 5.45 5.60 18.50 ØP 3.55 3.65 ØR 4.50 5.50 S 5.30 aaa DS9918 - Rev 5 Typ. 5.50 5.70 0.04 0.10 page 9/14 STW40N95DK5, STWA40N95DK5 TO-247 long leads package information 4.2 TO-247 long leads package information Figure 20. TO-247 long leads package outline 8463846_3 DS9918 - Rev 5 page 10/14 STW40N95DK5, STWA40N95DK5 TO-247 long leads package information Table 9. TO-247 long leads package mechanical data Dim. mm Min. Typ. Max. A 4.90 5.00 5.10 A1 2.31 2.41 2.51 A2 1.90 2.00 2.10 b 1.16 1.26 b2 3.25 b3 2.25 c 0.59 0.66 D 20.90 21.00 21.10 E 15.70 15.80 15.90 E2 4.90 5.00 5.10 E3 2.40 2.50 2.60 e 5.34 5.44 5.54 L 19.80 19.92 20.10 L1 P 3.50 Q 5.60 S 6.05 aaa DS9918 - Rev 5 4.30 3.60 3.70 6.00 6.15 6.25 0.04 0.10 page 11/14 STW40N95DK5, STWA40N95DK5 Revision history Table 10. Document revision history Date Revision 19-Sep-2013 1 Changes First release. Updated title, features and description in cover page. 13-Nov-2015 2 Updated Section 10 : "Electrical characteristics" and Section 12.1:"TO-247 package information" Minor text changes. Updated title,silhouette and description in cover page. Updated Table 2: "Absolute maximum ratings". 12-Apr-2016 3 Updated Section 10: "Electrical characteristics" . Added Figure 21: "TO-247 long lead package outline". Minor text changes Datasheet status promoted from preliminary to production data. Updated document title on cover page. 12-Dec-2016 4 Updated Table 2: "Absolute maximum ratings", Table 4: "Thermal data", Table 5: "On/off states", Table 6: "Dynamic" and Table 8: "Source-drain diode". Added Section 2.1: "Electrical characteristics (curves)". Minor text changes Updated Table 1. Absolute maximum ratings. 11-Aug-2021 5 Updated Section 4 Package information. Minor text changes. DS9918 - Rev 5 page 12/14 STW40N95DK5, STWA40N95DK5 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4.1 TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.2 TO-247 long leads package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 DS9918 - Rev 5 page 13/14 STW40N95DK5, STWA40N95DK5 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2021 STMicroelectronics – All rights reserved DS9918 - Rev 5 page 14/14