TN2010H-6G-TR

TN2010H-6G High temperature 20 A SCRs Datasheet - production data Applications A      G K A Description A This device offers high thermal performance during operation of up to 20 ARMS, thanks to a junction temperature of up to 150 °C. K G D²PAK Its D²PAK package allows modern SMD designs as well as compact back to back configuration. Features       High junction temperature: Tj = 150 °C High noise immunity dV/dt = 400 V/µs up to 150 °C Gate triggering current IGT = 10 mA Peak off-state voltage VDRM/VRRM = 600 V High turn on current rise dI/dt = 100 A/µs ECOPACK®2 compliant component August 2017 Motorbike voltage regulator circuits Inrush current limiting circuits Motor control circuits and starters Light dimmers Solid state relays The combination of noise immunity and low gate triggering current allows to design strong and compact control circuits. Table 1: Device summary Order code Package VDRM/VRRM IGT TN2010H-6G D²PAK 600 V 10 mA DocID030740 Rev 1 This is information on a product in full production. 1/10 www.st.com Characteristics 1 TN2010H-6G Characteristics Table 2: Absolute maximum ratings (limiting values), Tj = 25 °C unless otherwise specified Symbol Parameter Value Unit Tc = 132 °C 20 A Tc = 132 °C 12.7 Tc = 137 °C 10 Tc = 140 °C 8 Non repetitive surge peak on-state current (Tj initial = 25 °C) tp = 8.3 ms 197 tp = 10 ms 180 I2t value for fusing tp = 10 ms 162 A2s Critical rate of rise of on-state current IG = 2 x IGT, tr ≤ 100 ns f = 60 Hz 100 A/µs Non repetitive surge peak off-state voltage tp = 10 ms 700 V Peak gate current Tj = 150 °C 4 A Tj = 150 °C 1 W IT(RMS) RMS on-state current (180 ° conduction angle) IT(AV) Average on-state current (180 ° conduction angle) ITSM I2 t dl/dt VDSM/VRSM IGM tp = 20 µs A A PG(AV) Average gate power dissipation VRGM Maximum peak reverse gate voltage 5 V Tstg Storage junction temperature range -40 to +150 °C Operating junction temperature range -40 to +150 °C Tj Table 3: Electrical characteristics (Tj = 25 °C unless otherwise specified) Symbol IGT Test conditions Value VD = 12 V, RL = 33 Ω VGT Typ. 5 Max. 10 Max. 1.3 V Min. 0.1 V mA VGD VD = VDRM, RL = 3.3 kΩ IH IT = 500 mA, gate open Max. 40 mA IL IG = 1.2 x IGT Max. 60 mA Min. 400 V/µs dV/dt 2/10 Unit VD = 402 V, gate open Tj = 150 °C Tj = 150 °C tgt ITM = 40 A, VD = 402 V, IG = 20 mA, (dIG/dt) max = 0.2 A/µs Typ. 1.9 µs tq ITM = 40 A, VD = 402 V, (dI/dt)off = 30 A/µs, VR = 25 V, dVD/dt = 40 V/µs Typ. 70 µs DocID030740 Rev 1 Tj = 150 °C TN2010H-6G Characteristics Table 4: Static characteristics Symbol Value Test conditions Unit VTM ITM = 40 A, tp = 380 µs Tj = 25 °C Max. 1.6 VTO Threshold voltage Tj = 150 °C Max. 0.82 RD Dynamic resistance Tj = 150 °C Max. 17.5 mΩ 5 µA Tj = 25 °C IDRM, IRRM VD = VDRM, VR = VRRM Tj = 125 °C Max. Tj = 150 °C 2 3.9 V mA Table 5: Thermal parameters Symbol Rth(j-c) Rth(j-a) Parameter Value Junction to case (DC) Junction to ambient (DC) S(1) = 2.5 cm2 Max. 1.0 Typ. 45 Unit °C/W Notes: (1)S = Copper surface under tab DocID030740 Rev 1 3/10 Characteristics 1.1 TN2010H-6G Characteristics (curves) Figure 1: Maximum power dissipation versus average on-state current 20 Figure 2: Average and DC on-state current versus case temperature P(W) α = 180 ° 18 DC α = 120 ° α = 90 ° α = 60 ° 16 14 α = 30 ° 12 10 8 6 360 ° 4 2 0 IT(AV) (A) α 0 5 10 15 20 Figure 3: Average and D.C. on state current versus ambient temperature 24 22 20 18 16 14 12 10 8 6 4 2 0 I (A) T(AV) DC α = 180 ° α = 120 ° α = 90 ° α = 60 ° α = 30 ° T (°C) c 0 25 50 75 100 125 150 Figure 4: Relative variation of thermal impedance versus pulse duration K = [Zth/ Rth] 1.0E+00 IT(AV) (A) 3.0 Z th(j-c) 2.5 DC 2.0 Z th(j-a) α = 180 ° 1.0E-01 1.5 1.0 0.5 0.0 tP(s) Ta(°C) a 0 25 50 75 100 125 150 Figure 5: Relative variation of gate triggering current and gate voltage versus junction temperature (typical values) 2.5 1.0E-02 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 Figure 6: Relative variation of holding and latching current versus junction temperature (typical values) IGT, VGT [ Tj ] / IGT, VGT [ Tj = 25 °C] 2.5 2.0 IH, IL [ Tj ] / IH, IL [ Tj = 25 °C] 2.0 I 1.5 I H I GT 1.5 1.0 V L 1.0 GT 0.5 0.5 T (°C) 0.0 -50 4/10 Tj(°C) j -25 0 25 50 75 100 125 150 0.0 -50 DocID030740 Rev 1 -25 0 25 50 75 100 125 150 TN2010H-6G Characteristics Figure 7: Relative variation of static dV/dt immunity versus junction temperature (typical values) 16 Figure 8: Surge peak on-state current versus number of cycles ITSM(A) 200 dV/dt [T j] / dV/dt [T j=150 °C] Non repetitive T = 25 °C j VD = 402 V 14 tp=10ms 150 12 Above test equipment capability One cycle 10 8 100 6 Repetitive T = 132 °C c 4 50 2 Tj(°C) 0 25 50 75 100 125 150 Number of cycles 0 1 100 1000 Figure 10: On-state characteristics (maximum values) Figure 9: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms 10000 10 ITSM(A) dl/dt limitation: 100 A/µs T initial = 25 °C j 1000 I TSM 100 t (ms) p 10 0.01 0.10 1.00 10.00 Figure 11: Relative variation of leakage current versus junction temperature 1.E+00 Figure 12: Thermal resistance junction to ambient versus copper surface under tab (typical values) IDRM, IRRM [ Tj ] / IDRM , IRRM [ Tj = 150 °C ] 80 Rth(j-a) (°C/W) 70 V = V = 600 V DRM RRM 1.E-01 60 50 1.E-02 40 30 20 1.E-03 1.E-04 25 Epoxy printed board FR4, eCU= 35 µm 10 Tj(°C) 50 75 100 125 SCu(cm²) 150 0 DocID030740 Rev 1 0 5 10 15 20 25 30 35 5/10 40 Package information 2 TN2010H-6G Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.   2.1 Epoxy meets UL94, V0 Lead-free, halogen-free package D²PAK package information Figure 13: D²PAK package outline 6/10 DocID030740 Rev 1 TN2010H-6G Package information Table 6: D²PAK package mechanical data Dimensions Ref. Inches(1) Millimeters Min. Typ. Max. Min. Typ. Max. A 4.30 4.60 0.1693 0.1811 A1 2.49 2.69 0.0980 0.1059 A2 0.03 0.23 0.0012 0.0091 A3 0.0098 0.25 b 0.70 0.93 0.0276 0.0366 b2 1.25 1.7 0.0492 0.0669 c 0.45 0.60 0.0177 0.0236 c2 1.21 1.36 0.0476 0.0535 D 8.95 9.35 0.3524 0.3681 D1 7.50 8.00 0.2953 0.3150 D2 1.30 1.70 0.0512 0.0669 e 2.54 E 10.00 10.28 0.3937 0.4047 E1 8.30 8.70 0.3268 0.3425 E2 6.85 7.25 0.2697 0.2854 G 4.88 5.28 0.1921 0.2079 H 15 15.85 0.5906 0.6240 L 1.78 2.28 0.0701 0.0898 L2 1.27 1.40 0.0500 0.0551 L3 1.40 1.75 0.0551 R V2 0.1 0.40 0° 0.0689 0.0157 8° 0° 8° Notes: (1)Dimensions in inches are given for reference only DocID030740 Rev 1 7/10 Package information TN2010H-6G Figure 14: D²PAK recommended footprint (dimensions are in mm) 8/10 DocID030740 Rev 1 TN2010H-6G 3 Ordering information Ordering information Figure 15: Ordering information scheme TN 20 10 G H - 6 Series TN = SCR Current 20 = 20 A Gate sensitivity 10 = 10 mA High temperature H = 150 °C Voltage 6 = 600 V Package G = D²PAK Packing mode Blank = tube -TR = Tape and reel Table 7: Ordering information Order code TN2010H-6G TN2010H-6G-TR 4 Marking Package Weight TN2010H6 D²PAK 2.3 g Base qty. Delivery mode 50 Tube 1000 Tape and reel Revision history Table 8: Document revision history Date Revision 24-Aug-2017 1 DocID030740 Rev 1 Changes Initial release. 9/10 TN2010H-6G IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved 10/10 DocID030740 Rev 1