TN2010H-6T
High temperature 20 A SCRs
Datasheet - production data
Description
A
Packaged in a non-isolated TO-220AB, this
device offers high thermal performance during
operation of up to 20 ARMS, thanks to a junction
temperature of up to 150 °C.
G
K
The combination of noise immunity and low gate
triggering current allows to design strong and
compact control circuit.
A
Table 1: Device summary
K
A
G
TO-220AB
Order code
Package
VDRM/VRRM
IGT
TN2010H-6T
TO-220AB
600 V
10 mA
Features
High junction temperature: Tj = 150 °C
High noise immunity dV/dt = 400 V/µs up to
150 °C
Gate triggering current IGT = 10 mA
Peak off-state voltage VDRM/VRRM = 600 V
High turn on current rise dI/dt = 100 A/µs
ECOPACK®2 compliant component
Applications
Motorbike voltage regulator circuits
Inrush current limiting circuits
Motor control circuits and starters
Light dimmers
Solid state relays
August 2017
DocID030739 Rev 1
This is information on a product in full production.
1/9
www.st.com
Characteristics
1
TN2010H-6T
Characteristics
Table 2: Absolute maximum ratings (limiting values), Tj = 25 °C unless otherwise specified
Symbol
Parameter
Value
Unit
Tc = 132 °C
20
A
Tc = 132 °C
12.7
Tc = 137 °C
10
Tc = 140 °C
8
Non repetitive surge peak on-state current
( Tj initial = 25 °C)
tp = 8.3 ms
197
tp = 10 ms
180
I2t value for fusing
tp = 10 ms
162
A2s
Critical rate of rise of on-state current
IG = 2 x IGT, tr ≤ 100 ns
f = 60 Hz
100
A/µs
Non repetitive surge peak off-state voltage
tp = 10 ms
700
V
Peak gate current
Tj = 150 °C
4
A
Tj = 150 °C
1
W
IT(RMS)
RMS on-state current
(180 ° conduction angle)
IT(AV)
Average on-state current
(180 ° conduction angle)
ITSM
I2 t
dl/dt
VDSM/VRSM
IGM
tp = 20 µs
A
A
PG(AV)
Average gate power dissipation
VRGM
Maximum peak reverse gate voltage
5
V
Tstg
Storage junction temperature range
-40 to +150
°C
Tj
Operating junction temperature range
-40 to +150
°C
TL
Maximum lead temperature for soldering during 10 s
260
°C
Table 3: Electrical characteristics (Tj = 25 °C unless otherwise specified)
Symbol
IGT
Test conditions
Value
VD = 12 V, RL = 33 Ω
VGT
Typ.
5
Max.
10
Max.
1.3
V
Min.
0.1
V
mA
VGD
VD = VDRM, RL = 3.3 kΩ
IH
IT = 500 mA, gate open
Max.
40
mA
IL
IG = 1.2 x IGT
Max.
60
mA
dV/dt
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Unit
VD = 402 V, gate open
Tj = 150 °C
Min.
400
V/µs
tgt
ITM = 40 A, VD = 402 V, IG = 20 mA, (dIG/dt) max = 0.2 A/µs
Typ.
1.9
µs
tq
ITM = 40 A, VD = 402 V, (dI/dt)off = 30 A/µs,
VR = 25 V, dVD/dt = 40 V/µs
Typ.
70
µs
DocID030739 Rev 1
Tj = 150 °C
Tj = 150 °C
TN2010H-6T
Characteristics
Table 4: Static characteristics
Symbol
Value
Test conditions
Unit
VTM
ITM = 40 A, tp = 380 µs
Tj = 25 °C
Max.
1.6
VTO
Threshold voltage
Tj = 150 °C
Max.
0.82
RD
Dynamic resistance
Tj = 150 °C
Max.
17.5
mΩ
5
µA
IDRM, IRRM
VD = VDRM, VR = VRRM
Tj = 25 °C
Tj = 125 °C
Max.
Tj = 150 °C
2
3.9
V
mA
Table 5: Thermal parameters
Symbol
Parameter
Value
Rth(j-c)
Junction to case (DC)
Max.
1.0
Rth(j-a)
Junction to ambient (DC)
Typ.
60
DocID030739 Rev 1
Unit
°C/W
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Characteristics
1.1
TN2010H-6T
Characteristics (curves)
Figure 1: Maximum power dissipation versus
average on-state current
20
Figure 2: Average and DC on-state current versus
case temperature
P(W)
α = 180 °
18
DC
α = 120 °
α = 90 °
α = 60 °
16
14
α = 30 °
12
10
8
6
360 °
4
2
0
IT(AV) (A)
α
0
5
10
15
20
Figure 3: Average and D.C. on state current versus
ambient temperature
24
22
20
18
16
14
12
10
8
6
4
2
0
I
(A)
T(AV)
DC
α = 180 °
α = 120 °
α = 90 °
α = 60 °
α = 30 °
T (°C)
c
0
25
50
75
100
125
150
Figure 4: Relative variation of thermal impedance
versus pulse duration
K = [Zth/ Rth]
1.0E+00
IT(AV) (A)
3.0
Z
th(j-c)
2.5
DC
2.0
Z
th(j-a)
α = 180 °
1.0E-01
1.5
1.0
0.5
0.0
tP(s)
Ta(°C)
a
0
25
50
75
100
125
150
Figure 5: Relative variation of gate triggering
current and gate voltage versus junction
temperature (typical values)
2.5
1.0E-02
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
Figure 6: Relative variation of holding and latching
current versus junction temperature
(typical values)
IGT, VGT [ Tj ] / IGT, VGT [ Tj = 25 °C]
2.5
2.0
IH, IL [ Tj ] / IH, IL [ Tj = 25 °C]
2.0
I
1.5
I
H
I
GT
1.5
1.0
V
L
1.0
GT
0.5
0.5
T (°C)
0.0
-50
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Tj(°C)
j
-25
0
25
50
75
100
125
150
0.0
-50
DocID030739 Rev 1
-25
0
25
50
75
100
125
150
TN2010H-6T
Characteristics
Figure 7: Relative variation of static dV/dt
immunity versus junction temperature
(typical values)
Figure 8: Surge peak on-state current versus
number of cycles
200
16
ITSM(A)
dV/dt [Tj ] / dV/dt [Tj = 150 °C]
Non repetitive T = 25 °C
j
VD = VR = 402 V
tp=10ms
14
150
One cycle
12
Above test equipment capability
10
100
8
6
Repetitive T = 132 °C
c
4
50
2
Tj(°C)
Number of cycles
0
25
50
75
100
125
150
0
1
10
Figure 9: Non repetitive surge peak on-state
current for a sinusoidal pulse with width tp < 10 ms
10000
ITSM(A)
1000
Figure 10: On-state characteristics
(maximum values)
1000
dl/dt limitation: 100 A/µs
100
ITM(A)
Tj max:
Vt0 = 0.82 V
Rd = 17.5 mΩ
T initial = 25 °C
j
100
1000
I
TSM
10
100
10
0.01
Tj = 150 °C
t (ms)
p
0.10
1.00
10.00
1
0.0
T = 25 °C
j
1.0
VTM(V)
2.0
3.0
4.0
Figure 11: Relative variation of leakage current versus junction temperature
IDRM, IRRM [ Tj ] / IDRM , IRRM [ Tj = 150 °C ]
1.E+00
V
= V
= 600 V
DRM
RRM
1.E-01
1.E-02
1.E-03
1.E-04
25
Tj(°C)
50
75
DocID030739 Rev 1
100
125
150
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Package information
2
TN2010H-6T
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
2.1
Epoxy meets UL94, V0
Lead-free, halogen-free package
Recommended torque value (TO-220AB): 0.4 to 0.6 N.m
TO-220AB package information
Figure 12: TO-220AB (NIns.) package outline
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DocID030739 Rev 1
TN2010H-6T
Package information
Table 6: TO-220AB (NIns.) package mechanical data
Dimensions
Ref.
Min.
A
Inches(1)
Millimeters
Typ.
15.20
Max.
Min.
15.90
0.5984
3.75
a1
Typ.
Max.
0.6260
0.1476
a2
13.00
14.00
0.5118
0.5512
B
10.00
10.40
0.3937
0.4094
b1
0.61
0.88
0.0240
0.0346
b2
1.23
1.32
0.0484
0.0520
C
4.40
4.60
0.1732
0.1811
c1
0.49
0.70
0.0193
0.0276
c2
2.40
2.72
0.0945
0.1071
e
2.40
2.70
0.0945
0.1063
F
6.20
6.60
0.2441
0.2598
I
3.73
3.88
0.1469
0.1528
L
2.65
2.95
0.1043
0.1161
I2
1.14
1.70
0.0449
0.0669
I3
1.14
1.70
0.0449
0.0669
I4
15.80
16.80
0.6220
16.40
2.6
M
0.6457
0.6614
0.1024
Notes:
(1)Inch
dimensions are for reference only.
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Ordering information
3
TN2010H-6T
Ordering information
Figure 13: Ordering information scheme
TN 20 10
H - 6
T
Series
TN = SCR
Current
20 = 20 A
Gate sensitivity
10 = 10 mA
High temperature
H = 150 °C
Voltage
6 = 600 V
Package
T = TO-220AB
Packing mode
Blank = tube
Table 7: Ordering information
4
Order code
Marking
Package
Weight
Base qty.
Delivery mode
TN2010H-6T
TN2010H6
TO-220AB
2.3 g
50
Tube
Revision history
Table 8: Document revision history
8/9
Date
Revision
29-Aug-2017
1
Changes
Initial release.
DocID030739 Rev 1
TN2010H-6T
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