TN2010H-6FP

TN2010H-6FP High temperature 20 A SCRs Datasheet - production data Description A Packaged in an insulated TO-220FPAB, this device offers high thermal performance during operation of up to 20 ARMS, thanks to a junction temperature of up to 150 °C. G K This insulated fullpack package allows a back to back configuration. The combination of noise immunity and low gate triggering current allows to design strong and compact control circuits. G A K TO-220FPAB Table 1: Device summary Features        Order code Package VDRM/VRRM IGT TN2010H-6FP TO-220FPAB 600 V 10 mA High junction temperature: Tj = 150 °C High noise immunity dV/dt = 400 V/µs up to 150 °C Gate triggering current IGT = 10 mA Peak off-state voltage VDRM/VRRM = 600 V High turn-on current rise dI/dt = 100 A/µs ECOPACK®2 compliant component TO-220FPAB insulated package:  Complies with UL standards (File ref: E81734)  Insulated voltage: 2000 VRMS Applications      Motorbike voltage regulator circuits Inrush current limiting circuits Motor control circuits and starters Light dimmers Solid state relays August 2017 DocID030741 Rev 1 This is information on a product in full production. 1/9 www.st.com Characteristics 1 TN2010H-6FP Characteristics Table 2: Absolute maximum ratings (limiting values), Tj = 25 °C unless otherwise specified Symbol Parameter Value Unit Tc = 80 °C 20 A Tc = 80 °C 12.7 Tc = 99 °C 10 Tc = 112 °C 8 Non repetitive surge peak on-state current (Tj initial = 25 °C) tp = 8.3 ms 197 tp = 10 ms 180 I2t value for fusing tp = 10 ms 162 A2s Critical rate of rise of on-state current IG = 2 x IGT, tr ≤ 100 ns f = 60 Hz 100 A/µs Non repetitive surge peak off-state voltage tp = 10 ms 700 V Peak gate current Tj = 150 °C 4 A Tj = 150 °C 1 W Storage junction temperature range -40 to +150 °C Tj Operating junction temperature range -40 to +150 °C TL Maximum lead temperature for soldering during 10 s 260 °C Insulation RMS voltage, 60 seconds 2000 V IT(RMS) RMS on-state current (180 ° conduction angle) IT(AV) Average on-state current (180 ° conduction angle) ITSM I2 t dl/dt VDSM/VRSM IGM PG(AV) Tstg VINS(RMS) tp = 20 µs Average gate power dissipation A A Table 3: Electrical characteristics (Tj = 25 °C unless otherwise specified) Symbol IGT Test conditions Value VD = 12 V, RL = 33 Ω VGT Typ. 5 Max. 10 Max. 1.3 V Min. 0.1 V mA VGD VD = VDRM, RL = 3.3 kΩ IH IT = 500 mA, gate open Max. 40 mA IL IG = 1.2 x IGT Max. 60 mA Min. 400 V/µ s dV/dt 2/9 Unit VD = 402 V, gate open Tj = 150 °C Tj = 150 °C tgt ITM = 40 A, VD = 402 V, IG = 20 mA, (dIG/dt) max = 0.2 A/µs Typ. 1.9 µs tq ITM = 40 A, VD = 402 V, (dI/dt)off = 30 A/µs, VR = 25 V, dVD/dt = 40 V/µs Typ. 70 µs DocID030741 Rev 1 Tj = 150 °C TN2010H-6FP Characteristics Table 4: Static characteristics Symbol Value Test conditions Unit VTM ITM = 40 A, tp = 380 µs Tj = 25 °C Max. 1.6 VTO Threshold voltage Tj = 150 °C Max. 0.82 RD Dynamic resistance Tj = 150 °C Max. 17.5 mΩ 5 µA Tj = 25 °C IDRM, IRRM VD = VDRM, VR = VRRM Tj = 125 °C Max. 2 Tj = 150 °C 3.9 V mA Table 5: Thermal parameters Symbol Parameter Value Rth(j-c) Junction to case (DC) Max. 4.0 Rth(j-a) Junction to ambient (DC) Typ. 60 DocID030741 Rev 1 Unit °C/W 3/9 Characteristics 1.1 TN2010H-6FP Characteristics (curves) Figure 1: Maximum power dissipation versus average on-state current 20 Figure 2: Average and DC on-state current versus case temperature P(W) α = 180 ° 18 DC α = 120 ° α = 90 ° α = 60 ° 16 14 α = 30 ° 12 10 8 6 360 ° 4 2 0 I α 0 5 10 (A) T(AV) 15 20 24 22 20 18 16 14 12 10 8 6 4 2 0 IT(AV)(A) DC α = 180 ° α = 120 ° α = 90 ° α = 60 ° α = 30 ° T (°C) c 0 Figure 3: Average and D.C. on state current versus ambient temperature IT(AV)(A) 25 50 75 100 125 150 Figure 4: Relative variation of thermal impedance versus pulse duration K = [Zth/ Rth] 1.0E+00 3.0 Z th(j-c) 2.5 DC 2.0 Z th(j-a) α = 180 ° 1.0E-01 1.5 1.0 0.5 0.0 tP(s) Ta(°C) a 0 25 50 75 100 125 150 Figure 5: Relative variation of gate triggering current and gate voltage versus junction temperature (typical values) 2.5 IGT, VGT [ Tj ] / IGT, VGT [ Tj = 25 °C] 1.0E-02 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 Figure 6: Relative variation of holding and latching current versus junction temperature (typical values) 2.5 2.0 IH, IL [ Tj ] / IH, IL [ Tj = 25 °C] 2.0 I I GT 1.5 1.0 1.5 V I L H 1.0 GT 0.5 0.5 T (°C) 0.0 -50 4/9 Tj(°C) j -25 0 25 50 75 100 125 150 0.0 -50 DocID030741 Rev 1 -25 0 25 50 75 100 125 150 TN2010H-6FP Characteristics Figure 7: Relative variation of static dV/dt immunity versus junction temperature (typical values) Figure 8: Surge peak on-state current versus number of cycles 200 16 ITSM(A) dV/dt [T j] / dV/dt [T j=150 °C] Non repetitive T = 25 °C j VD =VR = 402 V 14 tp=10ms 150 12 One cycle Above test equipment capability 10 100 8 6 50 4 2 Repetitive T = 80 °C c Tj(°C) 0 25 50 75 100 125 150 Number of cycles 0 1 10 Figure 9: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms 10000 ITSM(A) 1000 Figure 10: On-state characteristics (maximum values) 1000 dl/dt limitation: 100 A/µs 100 ITM(A) T initial = 25 °C j Tj max: Vt0 = 0.82 V Rd = 17.5 mΩ 100 1000 ITSM 10 100 10 0.01 T = 150 °C j t (ms) p 0.10 1.00 10.00 1 0.0 T = 25 °C j 1.0 V (V) TM 2.0 3.0 4.0 Figure 11: Relative variation of leakage current versus junction temperature IDRM, IRRM [ Tj ] / IDRM , IRRM [ Tj = 150 °C ] 1.E+00 V = V = 600 V DRM RRM 1.E-01 1.E-02 1.E-03 1.E-04 25 Tj(°C) 50 75 DocID030741 Rev 1 100 125 150 5/9 Package information 2 TN2010H-6FP Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.    2.1 Epoxy meets UL94, V0 Lead-free, halogen-free package Recommended torque value (TO-220FPAB): 0.4 to 0.6 N.m TO-220AB package information Figure 12: TO-220FPAB package outline 6/9 DocID030741 Rev 1 TN2010H-6FP Package information Table 6: TO-220FPAB package mechanical data Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.1739 0.1818 B 2.5 2.7 0.0988 0.1067 D 2.50 2.75 0.0988 0.1087 E 0.45 0.70 0.0178 0.0277 F 0.75 1.0 0.0296 0.0395 F1 1.15 1.70 0.0455 0.0672 F2 1.15 1.70 0.0455 0.0672 G 4.95 5.20 0.1957 0.2055 G1 2.40 2.70 0.0949 0.1067 H 10.00 10.40 0.3953 0.4111 L2 16.00 typ. 0.6324 typ. L3 28.60 30.60 1.1304 1.2095 L4 9.80 10.6 0.3874 0.4190 L5 2.90 3.60 0.1146 0.1423 L6 15.90 16.40 0.6285 0.6482 L7 9.00 9.30 0.3557 0.3676 Dia 3.0 3.20 0.1186 0.1265 DocID030741 Rev 1 7/9 Ordering information 3 TN2010H-6FP Ordering information Figure 13: Ordering information scheme FP H - 6 TN 20 10 Series TN = SCR Current 20 = 20 A Gate sensitivity 10 = 10 mA High temperature H = 150 °C Voltage 6 = 600 V Package FP = TO-220FPAB Packing mode Blank = tube Table 7: Ordering information 4 Order code Marking Package Weight Base qty. Delivery mode TN2010H-6FP TN2010H6 TO-220FPAB 2.0 g 50 Tube Revision history Table 8: Document revision history 8/9 Date Revision 01-Aug-2017 1 DocID030741 Rev 1 Changes Initial release. TN2010H-6FP IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved DocID030741 Rev 1 9/9