TN1610H-6FP

TN1610H-6FP Datasheet High temperature 16 A 600 V TO220FP thyristor SCRs Features A G K K A G TO-220FPAB • High junction temperature: Tj = 150 °C • • High noise immunity dV/dt = 1000V/µs up to 150 °C Gate triggering current IGT = 10 mA • Peak off-state voltage VDRM/VRRM = 600 V • High turn-on current rise dI/dt = 100 A/µs • • • ECOPACK®2 compliant Complies with UL standards (File ref: E81734) Insulated package TO-220FPAB: – Insulated voltage: 2000 VRMS Applications • • • • • Motorbike voltage regulator circuits Inrush current limiting circuits Motor control circuits and starters Light dimmers Solid state relays Description Thanks to a junction temperature Tj up to 150 °C and an isolated TO-220FPAB package, the TN1610H-6FP offers high thermal performance operation up to 16 A rms. Product status TN1610H-6FP Product summary Order code TN1610H-6FP Package TO-220FPAB VDRM/VRRM 600 V IGT 10 mA The trade-off between the device’s noise immunity (dV/dt = 1 kV/μs), its gate triggering current (IGT = 10 mA) and its turn-on current rise (dI/dt = 100 A/μs) allows the design of robust and compact control circuits for voltage regulators in motorbikes and industrial drives, overvoltage crowbar protection, motor control circuits in power tools and kitchen appliances and inrush current limiting circuits. The insulated fullpack package allows a back-to-back configuration. DS10900 - Rev 2 - February 2019 For further information contact your local STMicroelectronics sales office. www.st.com TN1610H-6FP Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values), Tj = 25 °C unless otherwise specified Symbol Value Unit Tc = 83 °C 16 A Tc = 83 °C 10 Tc = 102 °C 8 Tc = 117 °C 6 tp = 8.3 ms 153 tp = 10 ms 140 tp = 10 ms 98 A2s f = 60 Hz 100 A/µs 600 V Tj = 150 °C 4 A Tj = 150 °C 1 W Storage junction temperature range -40 to +150 °C Tj Maximum operating junction temperature -40 to +150 °C Tl Maximum lead temperature soldering during 10 s 260 °C Insulation rms voltage, 1 minute, TO-220FPAB 2000 V IT(RMS) RMS on-state current (180 ° conduction angle) IT(AV) Average on-state current (180 ° conduction angle) ITSM Non repetitive surge peak on-state current (Tj initial = 25 °C) I2t value for fusing, (Tj initial = 25 °C) I2t IG = 2 x IGT, tr ≤ 100 ns dl/dt Critical rate of rise of on-state current VDRM/VRRM IGM PG(AV) Tstg Vins Parameter Repetitive peak off-state voltage tp = 20 µs Peak gate current Average gate power dissipation A A Table 2. Electrical characteristics (Tj = 25 °C unless otherwise specified) Symbol IGT Test conditions Value VD = 12 V, RL = 33 Ω VGT DS10900 - Rev 2 Typ. 4.5 Max. 10 Max. 1.3 V Min. 0.2 V mA VGD VD = VDRM, RL = 3.3 kΩ IH IT = 500 mA, gate open Max. 30 mA IL IG = 1.2 x IGT Max. 60 mA Min. 1000 V/µs Typ. 1.9 µs Typ. 70 µs dV/dt VD = 402 V, gate open tgt IT = 32 A, VD = 600 V, IG = 100 mA, (dIG/dt) max = 0.2 A/µs tq IT = 32 A, VD = 402 V, (dlT/dt)OFF = 30 A/µs, VR = 25 V, dVD/dt = 40 V/µs Tj = 150 °C Unit Tj = 150 °C Tj = 150 °C page 2/10 TN1610H-6FP Characteristics Table 3. Static characteristics Symbol Test conditions Value Unit VTM IT = 32 A, tp = 380 µs Tj = 25 °C Max. 1.60 VTO Threshold voltage Tj = 150 °C Max. 0.82 RD Dynamic resistance Tj = 150 °C Max. 25 mΩ 5 µA 1.5 mA IDRM, IRRM Tj = 25 °C VD = VDRM; VR = VRRM Max. Tj = 150 °C V Table 4. Thermal parameters Symbol DS10900 - Rev 2 Parameter Value Rth(j-c) Junction to case (DC) Max. 4.5 Rth(j-a) Junction to ambient (DC) Typ. 60 Unit °C/W page 3/10 TN1610H-6FP Characteristics (curves) 1.1 Characteristics curves Figure 1. Maximum power dissipation versus average onstate current 18 P(W) 20 16 α = 180 ° 14 14 α = 60 ° 12 α = 30 ° α = 180 ° 10 8 α = 120 ° α = 90 ° α = 60 ° 8 6 6 4 2 IT(AV) (A) α 0 α = 30 ° 4 360 ° 2 5 10 Tc(°C) 0 15 Figure 3. Average and D.C. on state current versus ambient temperature 3.0 DC 16 α = 90 ° 10 IT(AV) (A) 18 DC α = 120 ° 12 0 Figure 2. Average and DC on-state current versus case temperature 0 25 50 75 100 125 150 Figure 4. Relative variation of thermal impedance versus pulse duration K = [Zth/ Rth] 1.0E+00 IT(AV) (A) Zth(j-c) 2.5 DC 2.0 Zth(j-a) α = 180 ° 1.5 1.0E-01 1.0 0.5 tP(s) Ta(°C) 0.0 0 25 50 75 100 125 150 Figure 5. Relative variation of gate triggering current and gate voltage versus junction temperature (typical values) 1.0E-02 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 Figure 6. Relative variation of holding and latching current versus junction temperature (typical values) IGT, VGT [ Tj ] / IGT, VGT [ Tj = 25 °C] 2.5 IH, IL [ Tj ] / IH, IL [ Tj = 25 °C] 2.5 2.0 2.0 I 1.5 0.5 DS10900 - Rev 2 I H 1.0 VGT 0.0 -50 L GT 1.5 1.0 I 0.5 Tj(°C) -25 0 25 50 75 100 125 150 0.0 -50 Tj(°C) -25 0 25 50 75 100 125 150 page 4/10 TN1610H-6FP Characteristics (curves) Figure 7. Relative variation of static dV/dt immunity versus junction temperature (typical values) 6 Figure 8. Surge peak on-state current versus number of cycles ITSM(A) 150 dV/dt [Tj] / dV/dt [Tj= 150 °C] V = V = 402 V D R Non repetitive Tj = 25 °C 5 tp=10ms Above test equipment capability 4 100 One cycle 3 50 2 Repetitive Tc = 83 °C 1 0 Tj (°C) 25 50 75 Number of cycles 0 100 125 1 150 Figure 9. Non repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms I (A) 10000 TSM 100 1000 Figure 10. On-state characteristics (maximum values) 1000 dl/dt limitation: 100 A/µs 10 ITM(A) Tj max: Vt0 = 0.82 V Rd = 25 mΩ Tj initial = 25 °C 100 1000 ITSM 10 100 Tj = 150 °C 10 0.01 0.10 1.00 Tj = 25 °C 1 0.0 tp(ms) 10.00 1.0 2.0 VTM(V) 3.0 4.0 Figure 11. Relative variation of leakage current versus junction temperature (tp < 10 ms) 1.E+00 IDRM, IRRM [ Tj ] / IDRM, IRRM [ Tj = 150 °C ] VDRM = VRRM = 600 V 1.E-01 1.E-02 1.E-03 1.E-04 25 DS10900 - Rev 2 Tj(°C) 50 75 100 125 150 page 5/10 TN1610H-6FP Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 2.1 TO-220FPAB package information • • • • ECOPACK®2 compliant Lead-free package leads finishing Molding compound resin is halogen-free and meets UL94 level V0 Recommended torque: 0.4 to 0.6 N·m Figure 12. TO-220FPAB package outline A B H Dia L6 L2 L7 L3 L5 F1 L4 D F2 F G1 E G DS10900 - Rev 2 page 6/10 TN1610H-6FP TO-220FPAB package information Table 5. TO-220FPAB package mechanical data Dimensions Ref. Inches(1) Millimeters Min. Max. Min. Max. A 4.40 4.60 0.1739 0.1818 B 2.5 2.7 0.0988 0.1067 D 2.50 2.75 0.0988 0.1087 E 0.45 0.70 0.0178 0.0277 F 0.75 1.0 0.0296 0.0395 F1 1.15 1.70 0.0455 0.0672 F2 1.15 1.70 0.0455 0.0672 G 4.95 5.20 0.1957 0.2055 G1 2.40 2.70 0.0949 0.1067 H 10.00 10.40 0.3953 0.4111 L2 16.00 typ. 0.6324 typ. L3 28.60 30.60 1.1304 1.2095 L4 9.80 10.6 0.3874 0.4190 L5 2.90 3.60 0.1146 0.1423 L6 15.90 16.40 0.6285 0.6482 L7 9.00 9.30 0.3557 0.3676 Diam 3.0 3.20 0.1186 0.1265 1. Inch dimensions are for reference only. DS10900 - Rev 2 page 7/10 TN1610H-6FP Ordering information 3 Ordering information Figure 13. Ordering information scheme TN 16 10 H - 6 FP Series TN = SCR Rms current 16 = 16 A Gate sensitivity 10 = 10 mA High temperature Voltage 6 = 600 V Package FP = TO-220FPAB Delivery mode Blank = tube Table 6. Ordering information DS10900 - Rev 2 Order code Marking Package Weight Base qty. Delivery mode TN1610H-6FP TN1610H6 TO-220FPAB 2.0 g 50 Tube page 8/10 TN1610H-6FP Revision history Table 7. Document revision history DS10900 - Rev 2 Date Revision Changes 24-Feb-2015 1 Initial release. 22-Feb-2019 2 Updated Table 4. Thermal parameters. page 9/10 TN1610H-6FP IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2019 STMicroelectronics – All rights reserved DS10900 - Rev 2 page 10/10