MMBT3904T

TAK CHEONG ® MMBT3904T SEM IC O N DU C TO R SOT-523 General Purpose Transistor NPN Silicon Surface Mount Plastic Package Green Product Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Symbol Parameter Value Units 3 VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 200 mA PD Power Dissipation (FR-4 Board – minimum pad) 200 mW Thermal Resistance from Junction to Ambient 600 °C /W -55 to +150 °C RθJA TJ TSTG Junction & Storage Temperature Range 2 1 SOT-523 (SC-75A) These ratings are limiting values above which the serviceability of the device may be impaired. Specification Features: Electrical Symbol: ƒ Simplifies Circuit Design ƒ RoHS Compliant ƒ Green EMC ƒ Matte Tin(Sn) Lead Finish ƒ Weight: approx. 0.002g Device Marking Code: AM Electrical Characteristics (TA = 25°C unless otherwise noted) Off Characteristics Symbol Parameter V(BR)CEO Collector-Emitter Breakdown Voltage Test Condition Limits Unit Min Max IC =1mA, IB =0A 40 - Volts (Note 1) V(BR)CBO Collector-Base Breakdown Voltage IC =10uA, IE =0A 60 - Volts V(BR)EBO Emitter-Base Breakdown Voltage IE =10uA, IB =0A 6 - Volts IBL Base Cutoff Current VCE =30V, VEB =3V - 50 nA ICEX Collector Cutoff Current VCE =30V, VEB =3V - 50 nA Note 1: Pulse Test. Pulse width