DG190AP/883

DG189/190/191 Vishay Siliconix High-Speed Drivers with Dual SPDT JFET Switches FEATURES BENEFITS D Constant On-Resistance Over Entire Analog Range D Low Leakage D Low Crosstalk D Rad Hardness D D D D D APPLICATIONS Low Distortion Eliminates Large Signal Errors High Precision High Bandwidth Capability Fault Protection D D D D D Audio Switching Video Switching Sample/Hold Guidance and Control Systems Aerospace DESCRIPTION The DG189/190/191 are precision dual single-pole, double-throw (SPDT) analog switches designed to provide accurate switching of video and audio signals. This series is ideally suited for applications requiring a constant on-resistance over the entire analog range. The major difference in the devices is the on-resistance (DG189—10  , DG190—30  , DG191—75  Reduced errors are achieved through low leakage current (ID(on) < 2 nA). Applications which benefit from the flat JFET on-resistance include audio switching, video switching, and data acquisition. To achieve fast and accurate switch performance, each device comprises four n-channel JFET transistors and a TTL compatible bipolar driver. The driver is designed to achieve break-before-make switching action, eliminating the inadvertent shorting between channels and the crosstalk which would result. In the on state, each switch conducts current equally well in either direction. In the off condition, the switches will block up to 20 V peak-to-peak, with feedthrough of less than ï60 dB at 10 MHz. FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION Dual-In-Line Flat Package D1 1 16 S1 NC 2 15 IN1 D3 3 14 S3 4 S4 S4 1 14 S3 D4 2 13 D3 Vï D2 3 12 D1 13 VR S2 4 11 S1 5 12 VL IN2 5 10 IN1 D4 6 9 Vï* 6 11 V+ V+ 7 8 NC VR 7 10 IN2 VL D2 8 9 S2 Top View Refer to JAN38510 Information, Military Section Top View *Common to Substrate and Case TRUTH TABLE Logic SW1, SW2 SW3, SW4 0 OFF ON 1 ON OFF 8V Logic g “0” v 0 0.8 Logic “1” w 2 2.4 4V Document Number: 70034 S-51140—Rev. D, 20-Jun-05 www.vishay.com 1 DG189/190/191 Vishay Siliconix ORDERING INFORMATION Temp Range Package ï25 to 85_C 16-Pin Sidebraze Part Number DG189BP DG190BP DG191BP DG189AP DG190AP 16 Pin Sidebraze 16-Pin 55 to 125_C ï55 DG191AP DG189AP, DG189AP/883, 5962-9068901MEA DG190AP, DG190AP/883, JM38510/11107BEA DG191AP, DG191AP/883, JM38510/11108BEA 14 Pin Flat Pack 14-Pin JM38510/11107BXA JM38510/11108BXA ABSOLUTE MAXIMUM RATINGS V+ to Vï . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 V Current (S or D) DG190, DG191 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA V+ to VD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 V Current (All Other Pins) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA VS, VD to Vï . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ï0.3 to 33 V Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ï65 to 150_C VD to VD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "22 V VL to Vï . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 V VL to VIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 V VL to VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 V VIN to VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 V VR to Vï . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 V VR to VIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 V Current (S or D) DG189 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mA Power Dissipationa 16-Pin Sidebrazeb . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW 14-Pin Flat Packc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW Notes: a. All leads welded or soldered to PC Board. b. Derate 12 mW/_C above 75_C c. Derate 10 mW/_C above 75_C SCHEMATIC DIAGRAM (TYPICAL CHANNEL) VL V+ S IN D VR Vï FIGURE 1. www.vishay.com 2 Document Number: 70034 S-51140—Rev. D, 20-Jun-05 DG189/190/191 Vishay Siliconix SPECIFICATIONSa FOR DG189 Test Conditions Unless Specified Parameter Symbol V+ = 15 V, Vï = ï15 V, VL = 5 V VR = 0 V, VIN = 0.8 V or 2 Vf Tempb Typc A Suffix B Suffix ï55 to 125_C ï25 to 85_C Mind Maxd Mind ï7.5 15 ï7.5 Maxd Unit Analog Switch Analog Signal Rangee Drain-Source On-Resistance VANALOG rDS(on) Source Off Leakage Current IS(off) S( ff) Full 15 V  IS = ï10 mA, VD = ï7.5 V Room Full 7.5 10 20 15 25 VS = "10 V, VD = #10 V V+ = 10 V, Vï = ï20 V Room Hot 0.05 10 1000 15 300 VS = "7.5 V, VD = #7.5 V Room Hot 0.05 10 1000 15 300 VS = "10 V, VD = #10 V V+ = 10 V, Vï = ï20 V Room Hot 0.04 10 1000 15 300 VS = "7.5 V, VD = #7.5 V Room Hot 0.03 10 1000 15 300 Drain Off Leakage Current ID(off) D( ff) Channel On Leakage Current ID(on) VD = VS = "7.5 V Room Hot ï0.1 Saturation Drain Current IDSS 2 ms Pulse Duration Room 300 Input Current with Input Voltage High IINH VIN = 5 V Room Hot 55 f = 1 MHz f = 1 MHz, RL = 75  ns pF dB Power Supplies Positive Supply Current I+ Room 0.6 Negative Supply Current Iï Room ï2.7 Logic Supply Current IL Room 3.1 Reference Supply Current IR Room ï1 VIN = 0 V V, or 5 V 1.5 ï5 1.5 ï5 4.5 ï2 4.5 mA ï2 Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. Document Number: 70034 S-51140—Rev. D, 20-Jun-05 www.vishay.com 3 DG189/190/191 Vishay Siliconix SPECIFICATIONSa FOR DG190 Test Conditions Unless Specified Parameter A Suffix B Suffix ï55 to 125_C ï25 to 85_C V+ = 15 V, Vï = ï15 V, VL = 5 V VR = 0 V, VIN = 0.8 V or 2 Vf Tempb VANALOG Full rDS(on) IS = ï10 mA, VD = ï7.5 V Room Full 18 30 60 VS = "10 V, VD = #10 V V+ = 10 V, Vï = ï20 V Room Hot 0.06 1 100 5 100 VS = "7.5 V, VD = #7.5 V Room Hot 0.1 1 100 5 100 VS = "10 V, VD = #10 V V+ = 10 V, Vï = ï20 V Room Hot 0.05 1 100 5 100 VS = "7.5 V, VD = #7.5 V Room Hot 0.06 1 100 5 100 Symbol Typc Mind Maxd Mind Maxd Unit ï7.5 15 ï7.5 15 V 50 75  Analog Switch Analog Signal Rangee Drain-Source On-Resistance Source Off Leakage Current IS(off) S( ff) Drain Off Leakage Current ID(off) D( ff) Channel On Leakage Current ID(on) VD = VS = "7.5 V Room Hot ï0.02 Input Current with Input Voltage High IINH VIN = 5 V Room Hot 50 ï2 ï200 nA ï10 ï200 Digital Input 10 20 ï250 10 20 A ï250 Dynamic Characteristics Turn-On Time ton Turn-Off Time toff Source-Off Capacitance See Switching Time Test Circuit CS(off) Drain-Off Capacitance CD(off) Channel-On Capacitance CD(on) Off Isolation OIRR f = 1 MHz f = 1 MHz, RL = 75  ns pF dB Power Supplies Positive Supply Current I+ Room 0.6 Negative Supply Current Iï Room ï2.7 Logic Supply Current IL Room 3.1 Reference Supply Current IR Room ï1 VIN = 0 V V, or 5 V 1.5 ï5 1.5 ï5 4.5 ï2 4.5 mA ï2 Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. www.vishay.com 4 Document Number: 70034 S-51140—Rev. D, 20-Jun-05 DG189/190/191 Vishay Siliconix SPECIFICATIONSa FOR DG191 Test Conditions Unless Specified Parameter Symbol V+ = 15 V, Vï = ï15 V, VL = 5 V VR = 0 V, VIN = 0.8 V or 2 Vf Tempb Typc A Suffix B Suffix ï55 to 125_C ï25 to 85_C Mind Maxd Mind ï10 15 ï10 Maxd Unit Analog Switch Analog Signal Rangee Drain-Source On-Resistance VANALOG rDS(on) Source Off Leakage Current IS(off) S( ff) Full 15 V  IS = ï10 mA, VD = ï7.5 V Room Full 35 75 150 100 150 VS = "10 V, VD = #10 V V+ = 10 V, Vï = ï20 V Room Hot 0.05 1 100 5 100 VS = "10 V, VD = #10 V Room Hot 0.07 1 100 5 100 VS = "10 V, VD = #10 V V+ = 10 V, Vï = ï20 V Room Hot 0.04 1 100 5 100 VS = "10 V, VD = #10 V Room Hot 0.05 1 100 5 100 Drain Off Leakage Current ID(off) D( ff) Channel On Leakage Current ID(on) VD = VS = "10 V Room Hot ï0.03 Input Current with Input Voltage High IINH VIN = 5 V Room Hot 50 ï2 ï200 nA ï10 ï200 Digital Input 10 20 ï250 10 20 A ï250 Dynamic Characteristics Turn-On Time ton Turn-Off Time toff Source-Off Capacitance See Switching Time Test Circuit CS(off) Drain-Off Capacitance CD(off) Channel-On Capacitance CD(on) Off Isolation OIRR f = 1 MHz f = 1 MHz, RL = 75  Positive Supply Current I+ Room 0.6 Negative Supply Current Iï Room ï2.7 Logic Supply Current IL Room 3.1 Reference Supply Current IR Room ï1 VIN = 0 V V, or 5 V ns pF p dB 1.5 ï5 1.5 ï5 4.5 ï2 4.5 mA ï2 Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. Document Number: 70034 S-51140—Rev. D, 20-Jun-05 www.vishay.com 5 DG189/190/191 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Supply Current vs. Temperature 5 IIN vs. VIN and Temperature 100 VINL = 0 VINH = 5 V 80 IL 3 I IN (mA) I L , Iï, I+, I R (mA) 4 ïIï 2 ïIINL 60 40 ïIR 1 20 I+ IINH 0 ï55 ï35 ï15 5 25 45 65 85 105 0 ï55 ï35 125 ï15 5 Temperature (_C) 65 85 105 125 Switching Time vs. VD and Temperature (DG189) 230 VD = 7.5 V DG191 210 tON VD = ï7.5 V 190 t ON, t OFF (ns) DG190 r DS(on) (  ) 45 Temperature (_C) rDS(on) vs. Temperature 100 25 10 DG189 170 tOFF 150 130 VD= ï7.5 V IS = ï10 mA 110 1 ï50 ï25 0 25 50 75 100 90 ï55 125 ï35 ï15 5 Temperature (_C) Leakage vs. Temperature (DG189) 100 t ON, t OFF (ns) I S, I D (nA) 105 125 VD = ï7.5 V 110 1 tON 100 90 tOFF 80 70 ID(on) ID(off) 60 0.1 65 85 Temperature (_C) 6 85 VD = 7.5 V 120 IS(off) www.vishay.com 65 Switching Time vs. VD and Temperature (DG190/191) 10 45 45 130 V+ = 10 V Vï = ï20 V VL = 5 V VR = 0 25 25 Temperature (_C) 105 125 50 ï55 ï35 ï15 5 25 45 65 85 105 125 Temperature (_C) Document Number: 70034 S-51140—Rev. D, 20-Jun-05 DG189/190/191 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) ID(off) vs. Temperature (DG190/191) 100 Capacitance vs. VD or VS (DG189) 30 f = 1 MHz V+ = 10 V, Vï = ï20 V VD = ï10 V, VS = 10 V 26 C S, D (pF) I D (nA) 10 B Suffix 1 CS(off) 22 CD(on) 18 A Suffix CD(off) 14 0.1 10 25 20 18 65 85 Temperature (_C) 105 ï8 125 Capacitance vs. VD or VS (DG190/191) VINL = 0.8 V VINH = 2 V f = 1 MHz 90 80 CD(on) 70 12 60 CS(off) 8 CD(off) 6 4 2 0 ï10 DG190/191 DG189 50 40 30 V+ = 15 V, Vï = ï15 V VR = 0, VL = 5 V RL = 75  VIN w 220 mVRMS 20 Capacitance is measured from test terminal to common. 10 0 ï8 ï6 ï4 ï2 0 2 4 6 8 VD or VS ï Drain or Source Voltage (V) Document Number: 70034 S-51140—Rev. D, 20-Jun-05 8 Off Isolation vs. Frequency 14 10 ï4 0 4 VD or VS ï Drain or Source Voltage (V) 100 ISO (dB) C S, D (pF) 16 45 10 105 106 107 108 f ï Frequency (Hz) www.vishay.com 7 DG189/190/191 Vishay Siliconix TEST CIRCUITS Feedthrough due to charge injection may result in spikes at the leading and trailing edge of the output waveform. +5 V +15 V VL VS1 VS2 tON: VS = 3 V tOFF: VS = ï3 V Logic Input V+ S1 D1 S3 D3 IN 3V CL 100 pF tON Switch Output ï15 V tOFF 0V 90% ï3 V CL (includes fixture and stray capacitance) RL V OUT + V S x R ) r L 90% 0V Vï VR 50% 0V VO RL 1 k tr