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DG2730DN-T1-GE4

DG2730DN-T1-GE4

  • 厂商:

    TFUNK(威世)

  • 封装:

    UFQFN10

  • 描述:

    IC SWITCH DPDT 8 OHM 10MINIQFN

  • 数据手册
  • 价格&库存
DG2730DN-T1-GE4 数据手册
DG2730 www.vishay.com Vishay Siliconix 2 Port, USB 2.0 High Speed (480 Mbps) Switch, DPDT Analog Switch DESCRIPTION FEATURES The DG2730 is 2 port high speed analog switch optimized for USB 2.0 signal switching. The DG2730 switch is configured in DPDT. It handles bidirectional signal flow, achieving a 900 MHz -3 dB bandwidth, a port to port crosstalk at -36 dB and isolation at -29 dB, measured at 240 MHz. Processed with high density sub micron CMOS, the DG2730 provide low parasitic capacitance. Signals are routed with minimized phase distortion and attain a bit to bit skew is as low as 40 ps. The DG2730 is designed for a wide range of operating voltages, from 2.7 V to 5.5 V that can be driven directly from one cell Li-ion battery or 5 V power supply. On-chip circuitry protects against conditions when either the D+ / Dlines are shorted to the VBUS at the USB port. Additionally, logic control pins (S and OE) can tolerate the presence of voltages that are above the supply power rail (V+). The control logic threshold is guaranteed to be (VIH = 1.3 V/min up to V+ = 3.6 V). Latch up current is 500 mA, as per JESD78, and its ESD tolerance exceeds 5.5 kV. Packaged in ultra small miniQFN-10 (1.4 mm x 1.8 mm x 0.55 mm), it is ideal for portable high speed mix signal switching application. As a committed partner to the community and the environment, Vishay Siliconix manufactures this product with lead (Pb)-free device termination. The miniQFN-10 package has a nickel-palladium-gold device termination and is represented by the lead (Pb)-free “-GE4” suffix to the ordering part number. The nickel-palladium-gold device terminations meet all JEDEC® standards for reflow and MSL rating. As a further sign of Vishay Siliconix’s commitment, the DG2730 is fully RoHS-complaint. • Wide operation voltage range • Low on-resistance, 5.5  (typical at 3 V) • Low capacitance, CON = 5.8 pF (typical) • 3 dB high bandwidth: 900 MHz (typical) • Low bit to bit skew: 40 ps (typical) • Low power consumption • Low logic threshold: V • Power down protection: D+/D- pins can tolerate up to 5.5 V when V+ = 0 V • 5.5 kV ESD protection (HBM) • Latch-up current 500 mA per JESD78 • Lead (Pb)-free low profile miniQFN-10 (1.4 mm x 1.8 mm x 0.55 mm) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Cellular phones • Portable media players • PDA • Digital camera • GPS • Notebook computer • TV, monitor, and set top box FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION OE HSD1+ HSD1- miniQFN-10L 7 6 5 8 HSD2+ 5x 4 Pin 1 3 10 1 GND Device marking: 5x for DG2730 x = Date/Lot Traceability Code 2 D+ Pin 1: LONG LEAD HSD2- D- S 9 Control V+ Top View S17-0074-Rev. G, 23-Jan-17 Document Number: 67786 1 For technical questions, contact: analogswitchtechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG2730 www.vishay.com Vishay Siliconix ORDERING INFROMATION TEMP. RANGE PACKAGE PART NUMBER -40 °C to 85 °C miniQFN-10 DG2730DN-T1-GE4 TRUTH TABLE PIN DESCRIPTIONS OE (PIN 8) S (PIN 10) FUNCTION PIN NAME DESCRIPTION 0 1 D+ = HSD1+ and D- = HSD1- OE Bus switch enable 0 0 D+ = HSD2+ and D- = HSD2- S Select input 1 X Disconnect HSD1±, HSD2±, D± Data port ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER LIMIT V+ Reference to GND -0.3 to 6 S, OE, D±, HSD1±, HSD2± a Current (Any Terminal Except S, OE, D±, HSD1±, HSD2±) -0.3 to (V+ + 0.3) Continuous Current (S, OE, D±, HSD1±, HSD2±) ± 250 ± 500 Storage Temperature (D suffix) Power Dissipation (Packages) miniQFN-10 V 30 Peak Current (Pulsed at 1 ms, 10 % duty cycle) b UNIT c mA -65 to +150 °C 208 mW ESD (Human body model) 5.5 kV Latch-Up (Current injection) 500 mA Notes a. Signals on S, OE, D±, HSD1±, HSD2± exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 2.6 mW/°C above 70 °C. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-0074-Rev. G, 23-Jan-17 Document Number: 67786 2 For technical questions, contact: analogswitchtechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG2730 www.vishay.com Vishay Siliconix SPECIFICATIONS (V+ = 3 V) LIMITS -40 °C to +85 °C TEST CONDITIONS OTHERWISE UNLESS SPECIFIED TEMP. a VANALOG RDS(on) Full 0 - V+ On-Resistance RDS(on) V+ = 3 V, ID± = 8 mA, VHSD1/2± = 0.4 V Room - 5.5 8 Full - - 9 On-Resistance Match d RON V+ = 3 V, ID± = 8 mA, VHSD1/2± = 0.4 V Room - 0.8 - RON Flatness V+ = 3 V, ID± = 8 mA, VHSD1/2± = 0 V, 1 V Room - 2 - Switch Off Leakage Current Ioff V+ = 4.3 V, VHSD1/2± = 0.3 V, 3 V, VD± = 3 V, 0.3 V Full -100 - 100 Channel On Leakage Current Ion V+ = 4.3 V, VHSD1/2± = 0.3 V, 4 V, VD± = 4 V, 0.3 V Full -200 - 200 V+ = 3 V to 3.6 V Full 1.3 - - V+ = 4.3 V Full 1.5 - - V+ = 3 V to 4.3 V Full - - 0.5 Full - 6.5 - pF Full -1 - 1 μA Room - 5 - Full - 5 - Room - - 30 Full - - 30 Room - - 25 PARAMETER SYMBOL MIN. b UNIT TYP. c MAX. b Analog Switch Analog Signal Range d On-Resistance Flatness d V  nA Digital Control Input Voltage High VINH Input Voltage Low VINL Input Capacitance Input Current CIN IINL or IINH VIN = 0 or V+ V Dynamic Characteristics Break-Before-Make Time d tBBM S, OE Turn-On Time d tON S, OE Turn-Off Time d tOFF - - 25 Charge Injection d QINJ CL = 1 nF, RGEN = 0 , VGEN = 0 V - 3 - Off-Isolation d OIRR - -29 - XTALK V+ = 3 V to 3.6 V, RL = 50 , CL = 5 pF, f = 240 MHz - -36 - Bandwidth d BW V+ = 3 V to 3.6 V, RL = 50 , - 3 dB - 900 - D+/D- On Capacitance CON V+ = 3.3 V, OE = 0 V, f = 240 MHz - 5.8 - D1n, D2n Off Capacitance COFF V+ = OE = 3.3 V, f = 240 MHz - 2.2 - Channel-to-Channel Skew d tSK(O) - 50 - Skew Off Opposite Transitions of the Same Output d tSK(p) - 20 - - 200 - - 2.6 - 5.5 V Full - - 2 μA Crosstalk d, e Total Jitter d V+ = 3 V, VD1/2 ± = 1.5 V, RL = 50 , CL = 35 pF Full Room V+ = 3 V to 3.6 V, RL = 50 , CL = 5 pF tJ ns pC dB MHz pF ps Power Supply Power Supply Range V+ Power Supply Current I+ VIN = 0 V, or V+ Notes a. Room = 25 °C, Full = as determined by the operating suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet. c. Typical values are for design aid only, not guaranteed nor subject to production testing. d. Guaranteed by design, not subjected to production test. e. Crosstalk measured between channels. S17-0074-Rev. G, 23-Jan-17 Document Number: 67786 3 For technical questions, contact: analogswitchtechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG2730 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 24 26 20 V+ = 3.0 V 18 24 20 V+ = 3.3 V 16 V+ = 3.6 V 14 V+ = 4.3 V 12 10 V+ = 2.6 V 22 RON - On-Resistance (Ω) RON - On-Resistance (Ω) T = 25 °C IS = 8 mA D1± V+ = 2.6 V 22 V+ = 5.5 V 8 6 18 14 12 +25 °C +85 °C 10 8 6 4 4 2 2 0 -40 °C 16 0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0.5 1.0 2.5 3.0 20 22 V+ = 3.0 V 20 V+ = 3.3 V 18 18 16 16 RON - On-Resistance (Ω) RON - On-Resistance (Ω) 2.0 RON vs. Analog Voltage and Temperature RON vs. VD and Single Supply Voltage -40 °C 14 +25 °C 12 +85 °C 10 8 6 14 -40 °C 12 +25 °C +85 °C 10 8 6 4 4 2 2 0 0 0.0 0.5 1.0 1.5 2.0 2.5 0.0 3.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VD - Analog Voltage (V) VD - Analog Voltage (V) RON vs. Analog Voltage and Temperature RON vs. Analog Voltage and Temperature 18 16 V+ = 3.6 V V+ = 4.3 V 16 14 12 RON - On-Resistance (Ω) 14 RON - On-Resistance (Ω) 1.5 VD - Analog Voltage (V) VD - Analog Voltage (V) -40 °C +25 °C 10 +85 °C 8 6 4 12 10 -40 °C +25 °C 8 +25 °C 6 4 2 2 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VD - Analog Voltage (V) VD - Analog Voltage (V) RON vs. Analog Voltage and Temperature RON vs. Analog Voltage and Temperature S17-0074-Rev. G, 23-Jan-17 Document Number: 67786 4 For technical questions, contact: analogswitchtechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG2730 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS(TA = 25 °C, unless otherwise noted) 10 000 10 000 V+ = 4.3 V ID±(ON) 100 V+ = 2.6 V, 3.0 V, 3.3V, 3.6V & 4.3 V Leakage Current (pA) I+ - Supply Current (µA) 1000 10 1 0.1 0.01 1000 ID±(OFF) 100 10 0.001 IHSD1/2± (OFF) 0.0001 0.00001 10 100 1K 10K 100K 1M 1 - 40 10M - 20 0 Input Switching Frequency (Hz) 1.5 0 1.4 -1 60 80 100 -2 1.3 -3 VIH 1.2 Gain (dB) VT - Switching Threshold (V) 40 Leakage Current vs. Temperature Supply Current vs. Input Switching Frequency 1.1 VIL 1.0 -4 -5 -6 0.9 -7 0.8 -8 2.5 3 3.5 4 4.5 5 5.5 1M 10M V+ - Supply Voltage (V) 100M 1G 10G Frequency (Hz) Gain vs. Frequency, V+ = 3.3 V Switching Threshold vs. Supply Voltage 10 10 0 0 - 10 - 10 - 20 - 20 - 30 - 30 Cross Talk (dB) Off Isolation (dB) 20 Temperature (°C) - 40 - 50 - 60 - 40 - 50 - 60 - 70 - 70 - 80 - 80 - 90 - 90 - 100 - 100 1M 10M 100M Frequency (Hz) 1G Off-Isolation, V+ = 3.3 V S17-0074-Rev. G, 23-Jan-17 10G 1M 10M 100M Frequency (Hz) 1G 10G Crosstalk, V+ = 3.3 V Document Number: 67786 5 For technical questions, contact: analogswitchtechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG2730 www.vishay.com Vishay Siliconix TEST CIRCUITS V+ VINH Logic Input HSD1± or HSD2± Switch Input V+ VINL Switch Output D± tr < 5 ns tf < 5 ns 50 % VOUT 0.9 x V OUT Logic Input Switch Output S GND RL 50 Ω OE CL 35 pF 0V tOFF tON 0V Logic "1" = Switch on Logic input waveforms inverted for switches that have the opposite logic sense. CL (includes fixture and stray capacitance) VOUT = D± (R L RL + R ON ) Fig. 1 - Switching Time V+ Logic Input V+ D± HSD1± VHSD1± VINH tr < 5 ns tf < 5 ns VINL VO HSD2± VHSD2± RL 50 Ω S CL 35 pF HSD1± = HSD2± 90 % VO GND OE Switch 0V Output tD tD CL (includes fixture and stray capacitance) Fig. 2 - Break-Before-Make Interval V+ Rgen VOUT V+ HSD1± or HSD2± D± VOUT VOUT + IN OE Vgen CL = 1 nF VIN = 0 - V+ GND On On Off S Q= OUT x CL IN depends on switch configuration: input polarity determined by sense of switch. Fig. 3 - Charge Injection S17-0074-Rev. G, 23-Jan-17 Document Number: 67786 6 For technical questions, contact: analogswitchtechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG2730 www.vishay.com Vishay Siliconix TEST CIRCUITS V+ V+ 10 nF 10 nF V+ V+ HSD1± or HSD2± OE D± 0 V, 2.4 V Meter D± OE 0 V, 2.4 V RL GND HSD1± or HSD2± S S HP4192A Impedance Analyzer or Equivalent GND f = 1 MHz Analyzer VD± Off Isolation = 20 log V HSD2± or HSD1± Fig. 4 - Off-Isolation Fig. 5 - Channel Off/On Capacitance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67786 S17-0074-Rev. G, 23-Jan-17 Document Number: 67786 7 For technical questions, contact: analogswitchtechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix MINI QFN-10L CASE OUTLINE DIM MILLIMETERS INCHES MIN. NAM. MAX. MIN. NAM. MAX. A 0.45 0.55 0.60 0.0177 0.0217 0.0236 A1 0.00 - 0.05 0.000 - 0.002 b 0.15 0.20 0.25 0.006 0.008 0.010 0.150 or 0.127 REF (1) c 0.006 or 0.005 REF (1) D 1.70 1.80 1.90 0.067 0.071 0.075 E 1.30 1.40 1.50 0.051 0.055 0.059 e 0.40 BSC 0.016 BSC L 0.35 0.40 0.45 0.014 0.016 0.018 L1 0.45 0.50 0.55 0.0177 0.0197 0.0217 Note (1) The dimension depends on the leadframe that assembly house used. ECN T16-0163-Rev. B, 16-May-16 DWG: 5957 Revision: 16-May-16 1 Document Number: 74496 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern Vishay Siliconix RECOMMENDED MINIMUM PADS FOR MINI QFN 10L 1.700 (0.0669) 9x 0.563 (0.0221) 0.663 (0.0261) 0.200 (0.0079) 1 2.100 (0.0827) 0.400 (0.0157) Pitch 10 x 0.225 (0.0089) Mounting Footprint Dimensions in mm (inch) Document Number: 66554 Revision: 05-Mar-10 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000
DG2730DN-T1-GE4 价格&库存

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