IRF644NS

IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Advanced Process Technology VDS (V) 250 V RDS(on) (Ω) VGS = 10 V • Dynamic dV/dt Rating 0.240 RoHS* • 175 °C Operating Temperature Qg (Max.) (nC) 54 • Fast Switching Qgs (nC) 9.2 • Fully Avalanche Rated Qgd (nC) 26 • Ease of Paralleling Configuration Available COMPLIANT • Simple Drive Requirements Single • Lead (Pb)-free Available DESCRIPTION I2PAK (TO-262) TO-220 D S S D G G D G D2PAK (TO-263) S N-Channel MOSFET G D S Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. ORDERING INFORMATION Package TO-220 D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262) IRF644NPbF IRF644NSPbF IRF644NSTRLPbFa IRF644NSTRRPbFa IRF644NLPbF SiHF644N-E3 SiHF644NS-E3 SiHF644NSTL-E3a SiHF644NSTR-E3a SiHF644NL-E3 IRF644N IRF644NS IRF644NSTRLa IRF644NSTRRa IRF644NL SiHF644NS SiHF644NSTLa SiHF644NSTRa SiHF644NL Lead (Pb)-free SnPb SiHF644N Note a. See device orientation. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91038 S-83000-Rev. A, 19-Jan-09 www.vishay.com 1 IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL Vishay Siliconix ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 250 Gate-Source Voltage VGS ± 20 VGS at 10 V Continuous Drain Current TC = 25 °C Pulsed Drain Currenta V 14 ID TC = 100 °C UNIT A 9.9 IDM 56 1.0 W/°C Single Pulse Avalanche Energyb EAS 180e mJ Avalanche Current IAR 8.4 A Repetitive Avalanche Energy EAR 15 mJ PD 150 W dV/dt 7.9 V/ns TJ, Tstg - 55 to + 175 Linear Derating Factor Maximum Power Dissipation Peak Diode Recovery TC = 25 °C dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque °C 300d for 10 s 6-32 or M3 screw 10 lbf · in 1.1 N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 5.0 µH, RG = 25 Ω, IAS = 8.4 A (see fig. 12). c. ISD ≤ 8.4 A, dI/dt ≤ 378 A/µs, VDD ≤ VDS, TJ ≤ 175 °C. d. 1.6 mm from case. e. This is a calculated value limited to TJ = 175 °C. THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambientc SYMBOL TYP. MAX. RthJA - 62 Case-to-Sink, Flat, Greased Surfacec RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC - 1.0 Maximum Junction-to-Ambient (PCB Mount)d RthJA - 40 UNIT °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 µA 250 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.33 - V/°C VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V nA Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance www.vishay.com 2 IGSS IDSS RDS(on) gfs VGS = 20 V - - ± 100 VDS = 250 V, VGS = 0 V - - 25 VDS = 200 V, VGS = 0 V, TJ = 150 °C - - 250 - - 0.240 Ω 8.8 - - S VGS = 10 V ID = 8.4 Ab VDS = 50 V, ID = 8.4 Ab µA Document Number: 91038 S-83000-Rev. A, 19-Jan-09 IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 1060 - - 140 - - 38 - - - 54 UNIT Dynamic Input Capacitance Ciss Output Capacitance Coss pF Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs - - 9.2 Gate-Drain Charge Qgd - - 26 Turn-On Delay Time td(on) - 10 - - 21 - - 30 - - 17 - - 4.5 - - 7.5 - - - 14 - - 56 - - 1.3 - 165 250 ns - 1.0 1.6 µC Rise Time tr Turn-Off Delay Time td(off) Fall Time ID = 8.4 A, VDS = 200 V, see fig. 6 and 13b VGS = 10 V VDD = 125 V, ID = 8.4 A, RG = 6.2 Ω, VGS = 10 V, see fig. 10b tf Internal Drain Inductance LD Internal Source Inductance LS Between lead, 6 mm (0.25") from package and center of die contact D nC ns nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 14 A, VGS = 0 Vb TJ = 25 °C, IF = 14 A, dI/dt = 100 A/µsb V Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. c. This is only applied to TO-220 package. d. When mounted on 1" square PCB (fr-4 or G-10 material). TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 102 VGS Top 15 V 10 V 8.0 V 7.0 V 6.0 V 10 5.5 V 5.0 V Bottom 4.5 V 4.5 V 1 20 µs Pulse Width TC = 25 °C 0.1 0.1 91038_01 1 10 VDS, Drain-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics Document Number: 91038 S-83000-Rev. A, 19-Jan-09 ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 102 VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V Top 10 1 0.1 0.1 102 91038_02 4.5 V 20 µs Pulse Width TC = 175 °C 1 102 10 VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics www.vishay.com 3 IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL Vishay Siliconix 104 TJ = 25 °C 10 103 Ciss 102 Coss 20 µs Pulse Width VDS = 50 V 1 4 6 8 10 12 14 Crss 10 3.0 ID = 14 A VGS = 10 V 2.5 2.0 1.5 1.0 0.5 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 20 VGS, Gate-to-Source Voltage (V) 3.5 0.0 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 180 TJ, Junction Temperature (°C) 91038_04 Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 4 VDS, Drain-to-Source Voltage (V) 91038_05 Fig. 3 - Typical Transfer Characteristics 102 10 1 16 VGS, Gate-to-Source Voltage (V) 91038_03 RDS(on), Drain-to-Source On Resistance (Normalized) VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd TJ = 175 °C C, Capacitance (pF) ID, Drain-to-Source Current (A) 102 ID = 8.4 A VDS = 200 V 16 VDS = 125 V VDS = 50 V 12 8 4 0 0 91038_06 12 24 36 48 60 QG, Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Document Number: 91038 S-83000-Rev. A, 19-Jan-09 IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL Vishay Siliconix 15 TJ = 175 °C 10 TJ = 25 °C 1 12 ID, Drain Current (A) ISD, Reverse Drain Current (A) 102 9 6 3 0.1 0.0 VGS = 0 V 0 0.4 0.8 1.6 1.2 VSD, Source-to-Drain Voltage (V) 91038_07 25 50 VGS 150 175 RD D.U.T. RG 103 ID, Drain-to-Source Current (A) 125 Fig. 9 - Maximum Drain Current vs. Case Temperature VDS + - VDD Operation in this area limited by RDS(on) 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 102 Fig. 10a - Switching Time Test Circuit 10 100 µs VDS 1 ms 1 90 % TC = 25 °C TJ = 175 °C Single Pulse 0.1 1 91038_08 100 TC, Case Temperature (°C) 91038_09 Fig. 7 - Typical Source-Drain Diode Forward Voltage 75 10 10 ms 102 VDS, Drain-to-Source Voltage (V) 103 10 % VGS td(on) Fig. 8 - Maximum Safe Operating Area Document Number: 91038 S-83000-Rev. A, 19-Jan-09 tr td(off) tf Fig. 10b - Switching Time Waveforms www.vishay.com 5 IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL Vishay Siliconix Thermal Response (ZthJC) 10 1 D = 0.5 PDM 0.2 0.1 0.05 0.02 0.01 0.1 t1 t2 Single Pulse (Thermal Response) Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC 10-2 10-5 10-4 10-3 10-2 0.1 1 t1, Rectangular Pulse Duration (s) 91038_11 Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case VDS 15 V tp Driver L VDS D.U.T RG + A - VDD IAS 20 V tp IAS 0.01 Ω Fig. 12b - Unclamped Inductive Waveforms EAS, Single Pulse Avalanche Energy (mJ) Fig. 12a - Unclamped Inductive Test Circuit 300 ID 3.4 A 5.9 A Bottom 8.4 A Top 240 180 120 91038_12c 60 0 25 50 75 100 125 150 175 Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current www.vishay.com 6 Document Number: 91038 S-83000-Rev. A, 19-Jan-09 IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL Vishay Siliconix Current regulator Same type as D.U.T. 50 kΩ QG VGS 0.2 µF 12 V 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13b - Gate Charge Test Circuit Fig. 13a - Basic Gate Charge Waveform Peak Diode Recovery dV/dt Test Circuit + D.U.T Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - + RG + • dV/dt controlled by RG • ISD controlled by duty factor "D" • D.U.T. - device under test Driver gate drive P.W. Period D= - VDD P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage VDD Body diode forward drop Inductor current Ripple ≤ 5 % ISD * VGS = 5 V for logic level devices and 3 V drive devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91038. Document Number: 91038 S-83000-Rev. A, 19-Jan-09 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1