SI1039X-T1-GE3

Si1039X Vishay Siliconix P-Channel 1.8 V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () ID (A) 0.165 at VGS = - 4.5 V - 0.95 0.220 at VGS = - 2.5 V - 0.82 0.280 at VGS = - 1.8 V - 0.67 SC-89 (6-LEADS) D 1 6 D D 2 5 D APPLICATIONS 3 4 • Cell Phones and Pagers - Load Switch Marking Code O G • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low Threshold • Smallest LITTLE FOOT® Package: 1.6 mm x 1.6 mm • Low 0.6 mm Profile • Compliant to RoHS Directive 2002/95/EC WL Lot Traceability and Date Code S Part Number Code Top View Ordering Information: Si1039X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol 5s Steady State Drain-Source Voltage VDS - 12 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C IS Continuous Diode Current (Diode Conduction)a TA = 25 °C TA = 70 °C PD - 0.87 - 0.76 - 0.69 -4 - 0.18 - 0.14 0.21 0.17 0.13 0.10 TJ, Tstg Operating Junction and Storage Temperature Range V - 0.95 IDM Pulsed Drain Current Maximum Power Dissipationa ID Unit - 55 to 150 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Symbol t5s Steady State RthJA Typical Maximum 500 600 600 720 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board with minimum copper. Document Number: 70682 S10-2544-Rev. D, 08-Nov-10 www.vishay.com 1 Si1039X Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. - 0.45 Typ. Max. Unit ± 100 nA Static VGS(th) VDS = VGS, ID = - 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage a V VDS = - 12 V, VGS = 0 V -1 VDS = - 12 V, VGS = 0 V, TJ = 70 °C -5 VDS = - 5 V, VGS = - 4.5 V µA -4 A VGS = - 4.5 V, ID = - 0.87 A 0.140 0.165 RDS(on) VGS = - 2.5 V, ID = - 0.75 A 0.180 0.220 VGS = - 1.8 V, ID = - 0.2 A 0.230 0.280 gfs VDS = - 10 V, ID = - 0.87 A 3.5 VSD IS = - 0.14 A, VGS = 0 V - 0.78 - 1.2 3.8 6  S V Dynamicb Qg Total Gate Charge Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) VDS = - 6 V, VGS = - 4.5 V, ID = - 0.87 A tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr 0.7 nC 0.8 15 30 VDD = - 6 V, RL = 12  ID  - 0.5 A, VGEN = - 4.5 V, Rg = 6  20 40 30 60 16 30 IF = - 0.14 A, dI/dt = 100 A/µs 20 40 ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 4.0 4.0 VGS = 5 V thru 2.5 V TC = - 55 °C 2V 25 °C 3.2 125 °C I D - Drain Current (A) I D - Drain Current (A) 3.2 2.4 1.6 1.5 V 0.8 2.4 1.6 0.8 1V 0.0 0.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 2.5 3.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 70682 S10-2544-Rev. D, 08-Nov-10 Si1039X Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 800 0.4 600 C - Capacitance (pF) R DS(on) - On-Resistance () 0.5 VGS = 1.8 V 0.3 VGS = 2.5 V 0.2 VGS = 4.5 V Ciss 400 Coss 200 0.1 Crss 0.0 0 0 1 2 3 4 0 2 4 ID - Drain Current (A) 10 12 Capacitance 1.4 5 VDS = 6 V ID = 0.87 A VGS = 4.5 V ID = 0.87 A 1.3 4 3 2 1 1.2 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 8 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 1.1 1.0 0.9 0.8 - 50 0 0 1 2 3 4 5 0 25 50 75 100 125 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 0.5 R DS(on) - On-Resistance (Ω) TJ = 150 °C 1 TJ = 25 °C 0.1 0.0 - 25 Qg - Total Gate Charge (nC) 4 I S - Source Current (A) 6 0.4 ID = 0.87 A 0.3 ID = 0.2 A 0.2 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 70682 S10-2544-Rev. D, 08-Nov-10 5 www.vishay.com 3 Si1039X Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.35 4 3 ID = 250 µA Power (W) V GS(th) Variance (V) 0.25 0.15 0.05 2 1 - 0.05 - 0.15 - 50 - 25 0 25 50 75 100 125 150 0 10 -2 10 -1 1 10 100 600 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 600 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70682. www.vishay.com 4 Document Number: 70682 S10-2544-Rev. D, 08-Nov-10 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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