SI1058X-T1-GE3

Si1058X Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) Qg (Typ.) 0.091 at VGS = 4.5 V 1.3a 1.1 3.5 0.124 at VGS = 2.5 V • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Load Switch for Portable Devices SC-89 (6-LEADS) D 1 6 D D 2 5 D G 3 4 Marking Code T WL Lot Traceability and Date Code S Part Number Code Top View Ordering Information: Si1058X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ± 12 TA = 25 °C Continuous Drain Current (TJ = 150 °C)a TA = 70 °C Avalanche Current L = 0.1 mH Repetitive Avalanche Energy TA = 25 °C Continuous Source-Drain Diode Current TA = 25 °C Maximum Power Dissipationa TA = 70 °C 1.03b, c A 6 IAS 7 EAS 2.45 mJ IS 0.2b, c A 0.236b, c PD W 0.151b, c TJ, Tstg Operating Junction and Storage Temperature Range V 1.3b, c ID IDM Pulsed Drain Current Unit - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Symbol t 5 s Steady State RthJA Typical Maximum 440 530 540 650 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 650 °C/W. Document Number: 73894 S12-1618-Rev. E, 09-Jul-12 For technical question, contact: pmostechsupport@vishay.com www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1058X Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient V 18.9 ID = 250 µA mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.55 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 85 °C 10 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea RDS(on) gfs Forward Transconductance VDS =  5 V, VGS = 4.5 V - 3.6 0.7 6 µA A VGS = 4.5 V, ID = 1.3 A 0.076 0.091 VGS = 2.5 V, ID = 1.1 A 0.103 0.124 VDS = 10 V, ID = 1.3 A 5.5  S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 380 VDS = 10 V, VGS = 0 V, f = 1 MHz tr Rise Time td(off) Turn-Off DelayTime 3.9 5.9 3.51 5.3 VDS = 10 V, VGS = 4.5 V, ID = 1.3 A 0.82 nC 0.61 f = 1 MHz VDD = 10 V, RL = 15  ID  1 A, VGEN = 4.5 V, Rg = 1  tf Fall Time pF VDS = 10 V, VGS = 5 V, ID = 1.3 A td(on) Turn-On Delay Time 75 45  4.3 5.6 8 12 20 30 13 18 6 9 0.8 1.2 V 10.4 16 nC 3.7 5.7 ns Drain-Source Body Diode Characteristics Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 6 IS = 1 A IF = 1 A, dI/dt = 100 A/µs 6.5 ns 3.9 Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 73894 S12-1618-Rev. E, 09-Jul-12 For technical question, contact: pmostechsupport@vishay.com www.vishay.com 2 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1058X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1.8 6 VGS = 5 V thru 3 V 1.5 TC = 125 °C I D - Drain Current (A) I D - Drain Current (A) 5 VGS = 2.5 V 4 3 VGS = 2 V 2 1 1.2 0.9 0.6 0.3 TC = 25 °C VGS = 1.5 V TC = - 55 °C 0 0.0 0.6 1.2 1.8 0.0 0.0 2.4 1.0 2.0 2.5 Output Characteristics Transfer Characteristics Curves vs. Temp. 600 500 C - Capacitance (pF) 0.24 VGS = 2.5 V 0.18 0.12 Ciss 400 300 200 Coss 0.06 VGS = 4.5 V 100 Crss 0 0.00 0 1 2 3 4 5 0 6 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 5 1.8 R DS(on) - On-Resistance (Normalized) ID = 1.3 A VGS - Gate-to-Source Voltage (V) 1.5 VGS - Gate-to-Source Voltage (V) 0.30 R DS(on) - On-Resistance (Ω) 0.5 VDS - Drain-to-Source Voltage (V) 4 VDS = 10 V VGS = 16 V 3 2 1 0 0 1 2 3 4 Qg - Total Gate Charge (nC) Gate Charge Document Number: 73894 S12-1618-Rev. E, 09-Jul-12 5 1.6 VGS = 4.5 V ID = 1.3 A 1.4 1.2 VGS = 2.5 V ID = 1 A 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature For technical question, contact: pmostechsupport@vishay.com www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1058X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 10 0.20 R DS(on) - On-Resistance (Ω) I S - Source Current (A) I D = 1.3 A 1 TJ = 150 °C 0.1 TJ = 25 °C 0.01 0.16 0.12 TA = 125 °C TA = 25 °C 0.08 0.04 0.001 0.4 0.8 0.6 0.2 VSD - Source-to-Drain Voltage (V) 0 1 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage RDS(on) vs. VGS vs. Temperature 5.0 1.6 4.0 1.3 Power (W) VGS(th) (V) ID = 250 µA 1.0 3.0 2.0 0.7 1.0 0.4 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) 125 0 150 0.1 0.01 1 10 100 1000 Time (s) Threshold Voltage Single Pulse Power 10 Limited by RDS(on)* I D - Drain Current (A) 1 ms 1 10 ms 100 ms 0.1 1s 10 s DC 0.01 TA = 25 °C Single Pulse BVDSS Limited 0.001 0.1 * VGS 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 73894 S12-1618-Rev. E, 09-Jul-12 For technical question, contact: pmostechsupport@vishay.com www.vishay.com 4 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1058X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Notes: 0.1 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 540 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 4. Surface Mounted 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73894. Document Number: 73894 S12-1618-Rev. E, 09-Jul-12 For technical question, contact: pmostechsupport@vishay.com www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000