SI1058X_10

Si1058X Vishay Siliconix N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) () 0.091 at VGS = 4.5 V 0.124 at VGS = 2.5 V ID (A) 1.3a 1.1 Qg (Typ.) 3.5 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch for Portable Devices SC-89 (6-LEADS) D 1 6 D Marking Code T WL Lot Traceability and Date Code Part Number Code D 2 5 D G 3 4 S Top View Ordering Information: Si1058X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy Continuous Source-Drain Diode Current Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TA = 25 °C TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IAS EAS IS PD TJ, Tstg Limit 20 ± 12 1.3b, c 1.03b, c 6 7 2.45 0.2 b, c Unit V A mJ A W °C 0.236b, c 0.151b, c - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d t 5 s Steady State Symbol RthJA Typical 440 540 Maximum 530 650 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 650 °C/W. Document Number: 73894 S10-2542-Rev. D, 08-Nov-10 www.vishay.com 1 Si1058X Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a Symbol VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf ISM VSD trr Qrr ta tb Test Conditions VGS = 0 V, ID = 250 µA ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 12 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 85 °C VDS =  5 V, VGS = 4.5 V VGS = 4.5 V, ID = 1.3 A VGS = 2.5 V, ID = 1.1 A VDS = 10 V, ID = 1.3 A Min. 20 Typ. Max. Unit V 18.9 - 3.6 0.7 1.55 ± 100 1 10 6 0.076 0.103 5.5 380 0.091 0.124 mV/°C V nA nA µA A  S Drain-Source On-State Resistancea Forward Transconductance Dynamic b Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Drain-Source Body Diode Characteristics Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 5 V, ID = 1.3 A VDS = 10 V, VGS = 4.5 V, ID = 1.3 A f = 1 MHz VDD = 10 V, RL = 15  ID  1.0 A, VGEN = 4.5 V, Rg = 1  75 45 3.9 3.51 0.82 0.61 4.3 8 20 13 6 5.6 12 30 18 9 6 5.9 5.3 pF nC  ns IS = 1.0 A 0.8 10.4 3.7 6.5 3.9 1.2 16 5.7 V nC ns IF = 1.0 A, dI/dt = 100 A/µs Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73894 S10-2542-Rev. D, 08-Nov-10 Si1058X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 6 VGS = 5 V thru 3 V 5 I D - Drain Current (A) I D - Drain Current (A) VGS = 2.5 V 1.5 TC = 125 °C 1.2 1.8 4 3 VGS = 2 V 0.9 2 0.6 1 VGS = 1.5 V 0 0.0 0.3 TC = 25 °C TC = - 55 °C 0.6 1.2 1.8 2.4 0.0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.30 600 Transfer Characteristics Curves vs. Temp. R DS(on) - On-Resistance (Ω) 0.24 VGS = 2.5 V 0.18 C - Capacitance (pF) 500 Ciss 400 300 0.12 200 Coss 0.06 VGS = 4.5 V 100 Crss 0 4 8 12 16 20 0.00 0 1 2 3 4 5 6 0 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 5 ID = 1.3 A VGS - Gate-to-Source Voltage (V) 4 VGS = 16 V 3 R DS(on) - On-Resistance VDS = 10 V 1.6 1.8 Capacitance (Normalized) 1.4 VGS = 4.5 V ID = 1.3 A VGS = 2.5 V 1.2 ID = 1 A 2 1.0 1 0.8 0 0 1 2 3 4 5 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 73894 S10-2542-Rev. D, 08-Nov-10 www.vishay.com 3 Si1058X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 10 0.20 I D = 1.3 A R DS(on) - On-Resistance (Ω) I S - Source Current (A) 1 0.16 0.1 TJ = 150 °C TJ = 25 °C 0.12 TA = 125 °C 0.01 0.08 TA = 25 °C 0.001 0 0.2 0.4 0.6 0.8 1 VSD - Source-to-Drain Voltage (V) 0.04 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 1.6 5.0 RDS(on) vs. VGS vs. Temperature 1.3 ID = 250 µA VGS(th) (V) 1.0 Power (W) 4.0 3.0 2.0 0.7 1.0 0.4 - 50 - 25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (s) 10 100 1000 TJ - Temperature (°C) Threshold Voltage 10 Limited by RDS(on)* 1 ms I D - Drain Current (A) 1 10 ms 100 ms 0.1 1s 10 s 0.01 TA = 25 °C Single Pulse 0.001 0.1 * VGS DC Single Pulse Power BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 73894 S10-2542-Rev. D, 08-Nov-10 Si1058X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Notes: Normalized Effective Transient Thermal Impedance 0.1 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 540 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 4. Surface Mounted 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73894. Document Number: 73894 S10-2542-Rev. D, 08-Nov-10 www.vishay.com 5 Package Information Vishay Siliconix SC89: 6 LEADS (SOT 563F) 2 3 D E1/2 4 aaa C e1 A 2X 4 D B E/2 E 2 3 E1 2X aaa C 5 1 2 3 2X bbb C e B 4 6X b ccc M C A–B D A1 L1 L A A1 SEE DETAIL “A” MILLIMETERS Dim A A1 b c D E E1 e e1 L L1 Min 0.56 0.00 0.15 0.10 1.50 1.55 Max 0.60 0.10 0.30 0.18 1.70 1.70 NOTES: 1. 2. 2 Dimensions in millimeters. Dimension D does not include mold flash, protrusions or gate burrs. Mold flush, protrusions or gate burrs shall not exceed 0.15 mm per dimension E1 does not include interlead flash or protrusion, interlead flash or protrusion shall not exceed 0.15 mm per side. Dimensions D and E1 are determined at the outmost extremes of the plastic body exclusive of mold flash, the bar burrs, gate burrs and interlead flash, but including any mismatch between the top and the bottom of the plastic body. Datums A, B and D to be determined 0.10 mm from the lead tip. Terminal numbers are shown for reference only. These dimensions apply to the flat section of the lead between 0.08 mm and 0.15 mm from the lead tip. 3. 3 1.20 BSC 0.50 BSC 1.00 BSC 0.35 BSC 0.20 BSC 4 4. 5. 5 6. 6 ECN: E-00499—Rev. B, 02-Jul-01 DWG: 5880 Document Number: 71612 25-Jun-01 ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ DETAIL “A” ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ 6 5 4 SECTION B-B C 6 ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ Note Symbol aaa bbb ccc Tolerances Of Form And Position 0.10 0.10 0.10 2, 3 2, 3 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-89: 6-Lead 0.051 (1.300) (1.753) 0.012 (0.300) 0.051 (0.201) 0.020 (0.500) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index (0.798) 0.069 0.031 (0.478) 0.019 APPLICATION NOTE Document Number: 72605 Revision: 21-Jan-08 www.vishay.com 21 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1