SI1553DL-T1-GE3

Si1553DL Vishay Siliconix Complementary 2.5 V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.385 at VGS = 4.5 V ± 0.70 0.630 at VGS = 2.5 V ± 0.54 0.995 at VGS = - 4.5 V ± 0.44 1.800 at VGS = - 2.5 V ± 0.32 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code RA XX YY S1 Lot Traceability and Date Code Part # Code Top View Ordering Information: Si1553DL-T1-E3 (Lead (Pb)-free) Si1553DL-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted N-Channel Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C Continuous Source Current (Diode Conduction)a IS TA = 25 °C TA = 85 °C Operating Junction and Storage Temperature Range PD P-Channel Steady State 5s Steady State 20 - 20 ± 0.70 ± 0.66 ± 0.44 ± 0.41 ± 0.50 ± 0.48 ± 0.31 ± 0.30 - 0.25 - 0.23 ±1 0.25 0.23 0.30 0.27 0.30 0.27 0.16 0.14 0.16 0.14 TJ, Tstg Unit V ± 12 IDM Pulsed Drain Current Maximum Power Dissipationa ID 5s - 55 to 150 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t≤5s Steady State Steady State RthJA RthJF Typical Maximum 360 415 400 460 300 350 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. Document Number: 71078 S10-0792-Rev. E, 05-Apr-10 www.vishay.com 1 Si1553DL Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage Gate-Body Leakage VGS(th) VDS = VGS, ID = 250 µA N-Ch 0.6 VDS = VGS, ID = - 250 µA P-Ch - 0.6 VDS = 0 V, VGS = ± 12 V IGSS VDS = 16 V, VGS = 0 V Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea IDSS V N-Ch ± 100 P-Ch ± 100 N-Ch 1 VDS = - 16 V, VGS = 0 V P-Ch -1 VDS = 16 V, VGS = 0 V, TJ = 85 °C N-Ch 5 VDS = - 16 V, VGS = 0 V, TJ = 85 °C P-Ch -5 VDS ≥ 5 V, VGS = 4.5 V N-Ch 1 VDS ≤ - 5 V, VGS = - 4.5 V P-Ch -1 VGS = 4.5 V, ID = 0.66 A N-Ch 0.320 0.385 VGS = - 4.5 V, ID = - 0.41 A P-Ch 0.850 0.995 VGS = 2.5 V, ID = 0.40 A N-Ch 0.560 0.630 VGS = - 2.5 V, ID = - 0.25 A P-Ch 1.400 1.800 ID(on) RDS(on) gfs VSD nA µA A VDS = 10 V, ID = 0.66 A N-Ch 1.5 VDS = - 10 V, ID = - 0.41 A P-Ch 0.8 IS = 0.23 A, VGS = 0 V N-Ch 0.8 1.2 IS = - 0.23 A, VGS = 0 V P-Ch - 0.8 - 1.2 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Source-Drain Reverse Recovery Time trr N-Channel VDS = 10 V, VGS = 4.5 V, ID = 0.66 A P-Channel VDS = - 10 V, VGS = - 4.5 V, ID = - 0.41 A N-Channel VDD = 10 V, RL = 20 Ω ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 6 Ω P-Channel VDD = - 10 V, RL = 20 Ω ID ≅ - 0.5 A, VGEN = - 4.5 V, Rg = 6 Ω N-Ch 0.8 1.2 P-Ch 1.2 1.8 N-Ch 0.06 P-Ch 0.45 N-Ch 0.30 P-Ch 0.25 nC N-Ch 10 20 P-Ch 7.5 15 N-Ch 16 30 P-Ch 20 40 N-Ch 10 20 P-Ch 8.5 17 N-Ch 10 20 P-Ch 12 24 IF = 0.23 A, dI/dt = 100 A/µs N-Ch 20 40 IF = - 0.23 A, dI/dt = 100 A/µs P-Ch 25 40 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71078 S10-0792-Rev. E, 05-Apr-10 Si1553DL Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.0 1.0 VGS = 5 V thru 2.5 V 0.8 I D - Drain Current (A) I D - Drain Current (A) 0.8 2V 0.6 0.4 0.6 0.4 TC = 125 °C 0.2 0.2 25 °C 1.5 V - 55 °C 1V 0.5 1.0 1.5 2.0 2.5 0.0 0.0 3.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1.0 100 0.8 80 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.0 0.0 VGS = 2.5 V 0.6 0.4 VGS = 4.5 V 0.2 2.5 Ciss 60 40 Coss 20 Crss 0.0 0.0 0 0.2 0.4 0.6 0.8 1.0 0 12 16 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Capacitance 20 1.6 VGS = 4.5 V ID = 0.66 A VDS = 10 V ID = 0.66 A 1.4 3 2 (Normalized) 4 RDS(on) - On-Resistance V GS - Gate-to-Source Voltage (V) 8 On-Resistance vs. Drain Current 5 1.2 1.0 0.8 1 0 0.0 4 0.2 0.4 0.6 Qg - Total Gate Charge (nC) Gate Charge Document Number: 71078 S10-0792-Rev. E, 05-Apr-10 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si1553DL Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 RDS(on) - On-Resistance (Ω) I S - Source Current (A) 1.0 TJ = 150 °C TJ = 25 °C 0.1 0.0 0.8 ID = 0.66 A 0.6 0.4 0.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 VSD - Source-to-Drain Voltage (V) 3 4 5 On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.2 5 0.1 4 ID = 250 µA 0 3 Power (W) VGS(th) Variance (V) 2 VGS - Gate-to-Source Voltage (V) - 0.1 2 - 0.2 1 - 0.3 - 0.4 - 50 - 25 0 25 50 75 100 125 0 10-3 150 10-2 10-1 TJ - Temperature (°C) 1 10 100 600 Time (s) Threshold Voltage Single Pulse Power Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 400 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 10-3 4. Surface Mounted 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 71078 S10-0792-Rev. E, 05-Apr-10 Si1553DL Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.0 1.0 VGS = 5 V thru 3 V TC = - 55 °C 0.8 0.8 I D - Drain Current (A) I D - Drain Current (A) 2.5 V 0.6 0.4 2V 1V 0.4 0.5 1.0 1.5 1.5 V 2.0 2.5 0.0 0.0 3.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 3.0 100 3.0 2.5 80 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 125 °C 0.6 0.2 0.2 0.0 0.0 25 °C 2.0 VGS = 2.5 V 1.5 VGS = 3.6 V 1.0 VGS = 4.5 V Ciss 60 40 Coss 20 0.5 Crss 0.0 0.0 0 0.2 0.4 0.6 0.8 1.0 0 4 8 12 16 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance Document Number: 71078 S10-0792-Rev. E, 05-Apr-10 20 www.vishay.com 5 Si1553DL Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.6 VDS = 10 V ID = 0.41 A VGS = 4.5 V ID = 0.41 A 4 1.4 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 5 3 2 1 0 0.0 1.2 1.0 0.8 0.2 0.4 0.6 0.8 1.0 1.2 0.6 - 50 1.4 - 25 0 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Gate Charge 1 3.0 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 2.5 TJ = 150 °C TJ = 25 °C ID = 0.41 A 2.0 1.5 1.0 0.5 0.1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 VSD - Source-to-Drain Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.4 5 0.3 4 ID = 250 µA 0.2 Power (W) V GS(th) Variance (V) 1 0.1 3 2 0 1 - 0.1 - 0.2 - 50 - 25 0 25 50 75 TJ - Temperature (°C) Threshold Voltage www.vishay.com 6 100 125 150 0 10-3 10-2 10-1 1 10 100 600 Time (s) Single Pulse Power Document Number: 71078 S10-0792-Rev. E, 05-Apr-10 Si1553DL Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 400 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 4. Surface Mounted 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71078. Document Number: 71078 S10-0792-Rev. E, 05-Apr-10 www.vishay.com 7 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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