SI1988DH-T1-E3

Si1988DH Vishay Siliconix Dual N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.168 at VGS = 4.5 V 1.3a 0.200 at VGS = 2.5 V 1.3a 0.250 at VGS = 1.8 V 1.3a VDS (V) 20 Qg (Typ.) 1.6 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch for Portable Applications SOT-363 SC-70 (6-LEADS) S1 1 6 D2 D1 D1 G1 2 5 G2 D2 3 4 S2 CF XX YY Marking Code Lot Traceability and Date Code G2 G1 Part # Code Top View Ordering Information: Si1988DH-T1-E3 (Lead (Pb)-free) Si1988DH-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 TC = 70 °C TA = 25 °C 1.3a ID 1.3a, b, c 1.3a, b, c TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current IDM TC = 25 °C TA = 25 °C TC = 70 °C TA = 25 °C 1.0 IS 0.61b, c 1.25 0.8 PD W 0.74b, c 0.47b, c TA = 70 °C Operating Junction and Storage Temperature Range A 4 TC = 25 °C Maximum Power Dissipation V 1.3a TC = 25 °C Continuous Drain Current (TJ = 150 °C) Unit TJ, Tstg - 55 to 150 Soldering Recommendations (Peak Temperature)d, e °C 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Foot (Drain) Symbol Typical Maximum t≤5s RthJA 130 170 Steady State RthJF 80 100 Unit °C/W Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 220 °C/W. Document Number: 74296 S10-0721-Rev. B, 29-Mar-10 www.vishay.com 1 Si1988DH Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ ID = 250 µA VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA IGSS Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs V 19.7 mV/°C - 2.4 1 V VDS = 0 V, VGS = ± 8 V ± 100 ns VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 55 °C 10 VDS ≤ 5 V, VGS = 4.5 V 0.4 4 µA A VGS = 4.5 V, ID = 1.4 A 0.139 0.168 VGS = 2.5 V, ID = 1.3 A 0.165 0.200 VGS = 1.8 V, ID = 0.4 A 0.205 0.250 VDS = 4 V, ID = 1.4 A 4 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time 110 VDS = 10 V, VGS = 0 V, f = 1 MHz 25 pF 11 VDS = 10 V, VGS = 8 V, ID = 1.6 A 2.7 4.1 1.6 2.4 VDS = 10 V, VGS = 4.5 V, ID = 1.6 A 0.3 0.25 f = 1 MHz Ω 4 8 12 20 30 15 25 tf 10 15 td(on) 5 10 11 20 10 15 6 10 td(on) tr td(off) tr td(off) nC VDD = 10 V, RL = 7.7 Ω ID ≅ 1.3 A, VGEN = 4.5 V, Rg = 1 Ω VDD = 10 V, RL = 7.7 Ω ID ≅ 1.3 A, VGEN = 8 V, Rg = 1 Ω tr ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 1 4 IS = 1.3 A, VGS = 0 V IF = 1.3 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.8 1.2 V 20 40 ns 20 40 nC 16 4 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74296 S10-0721-Rev. B, 29-Mar-10 Si1988DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.0 4 VGS = 5 V thru 2 V 0.8 I D - Drain Current (A) I D - Drain Current (A) 3 VGS = 1.5 V 2 TC = - 55 °C 0.6 TC = 25 °C 0.4 1 0.2 TC = 125 °C VGS = 1 V 0 0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.0 3.0 0.6 0.9 1.2 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.40 1.5 160 0.35 120 C - Capacitance (pF) R DS(on) - Drain-to-Source On-Resistance (Ω) 0.3 0.30 VGS = 1.8 V 0.25 0.20 Ciss 80 VGS = 2.5 V 40 Coss 0.15 VGS = 4.5 V 0.10 Crss 0 0 1 2 3 4 0 4 VGS - Gate-to-Source Voltage (V) 8 12 16 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 8 1.8 7 1.6 VDS = 16 V 5 VDS = 10 V 4 3 2 ID = 1.6 A VGS = 1.8 V, 2.5 V, 4.5 V 1.2 1.0 0.8 1 0 0.0 1.4 (Normalized) 6 R DS(on) - On-Resistance VG S - Gate-to-Source Voltage (V) ID = 1.6 A 0.5 1.0 1.5 2.0 Qg - Total Gate Charge (nC) Gate Charge Document Number: 74296 S10-0721-Rev. B, 29-Mar-10 2.5 3.0 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si1988DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.40 R DS(on) - Drain-to-Source On-Resistance (Ω) I S - Source Current (A) 10 TJ = - 150 °C 1 TJ = - 25 °C 0.1 ID = 1.4 A 0.35 0.30 TJ = 125 °C 0.25 0.20 TJ = 25 °C 0.15 0.10 0 0.2 0.6 0.4 0.8 1.2 1.0 0 1 VSD - Source-to-Drain Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) Forward Diode Voltage On-Resistance vs. Gate-Source Voltage 0.9 5 0.8 4 3 Power (W) VGS(th) (V) 0.7 ID = 250 µA 0.6 2 0.5 1 0.4 0.3 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 100 600 10 Limited by R DS(on)* I D - Drain Current (A) 100 µs 1 1s 10 ms 0.1 100 ms T A = 25 °C Single Pulsed BVDSS Limited 0.01 0.1 1 * VGS 1 ms, 10 s DC 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Case www.vishay.com 4 Document Number: 74296 S10-0721-Rev. B, 29-Mar-10 Si1988DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.4 2.5 1.2 1.5 Power Dissipation (W) I D - Drain Current (A) 2.0 Package Limited 1.0 1.0 0.8 0.6 0.4 0.5 0.2 0.0 0.0 0 25 50 75 100 125 150 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74296 S10-0721-Rev. B, 29-Mar-10 www.vishay.com 5 Si1988DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.2 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 2. Per Unit Base = RthJA = 170 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 t1 t2 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74296. www.vishay.com 6 Document Number: 74296 S10-0721-Rev. 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