Si2303BDS
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)b
0.200 at VGS = - 10 V
- 1.64
0.380 at VGS = - 4.5 V
- 1.0
VDS (V)
- 30
• Halogen-free Option Available
Pb-free
Available
RoHS*
COMPLIANT
TO-236
(SOT-23)
G
1
S
2
3
D
Top View
Si2303BDS (L3)*
* Marking Code
Ordering Information: Si2303BDS-T1
Si2303BDS-T1-E3 (Lead (Pb)-free)
Si2303BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
VDS
- 30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)b
TA = 25 °C
TA = 70 °C
Pulsed Drain Currenta
IS
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
PD
V
- 1.64
- 1.49
- 1.31
- 1.2
IDM
Continuous Source Current (Diode Conduction)b
Power Dissipationb
ID
- 10
- 0.75
A
- 0.6
0.9
0.7
0.57
0.45
TJ, Tstg
Unit
- 55 to 150
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb
Maximum Junction-to-Ambientc
Symbol
RthJA
Typical
Maximum
120
145
140
175
Unit
°C/W
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 board, t ≤ 5 s.
c. Surface Mounted on FR4 board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72065
S-80642-Rev. C, 24-Mar-08
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Si2303BDS
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Limits
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS = 0 V, ID = - 10 µA
- 30
VGS(th)
VDS = VGS, ID = - 250 µA
- 1.0
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
VDS = - 30 V, VGS = 0 V
-1
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
- 10
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-Resistancea
RDS(on)
VDS ≤ - 5 V, VGS = - 10 V
- 3.0
-6
V
nA
µA
A
VGS = - 10 V, ID = - 1.7 A
0.150
0.200
VGS = - 4.5 V, ID = - 1.3 A
0.285
0.380
Forward Transconductancea
gfs
VDS = - 5 V, ID = - 1.7 A
2.0
Diode Forward Voltage
VSD
IS = - 0.75 A, VGS = 0 V
- 0.85
- 1.2
4.3
10
Ω
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = - 15 V, VGS = - 10 V, ID ≅ - 1.7 A
nC
0.8
1.3
180
VDS = - 15 V, VGS = 0 V, f = 1 MHz
pF
50
35
Switchingc
Turn-On Time
Turn-Off Time
td(on)
tr
td(off)
tf
VDD = - 15 V, RL = 15 Ω
ID ≅ - 1.0 A, VGEN = - 4.5 V
RG = 6 Ω
55
80
40
60
10
20
10
20
ns
Notes:
a. Pulse test: PW ≤ 300 µs, duty cycle ≤ 2 %.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 72065
S-80642-Rev. C, 24-Mar-08
Si2303BDS
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
10
10
VGS = 10 thru 6 V
TC = - 55°C
8
I D - Drain Current (A)
I D - Drain Current (A)
8
5V
6
4
4V
2
25 °C
6
125 °C
4
2
2 V, 3 V
0
0
0
2
4
6
8
0
10
1
2
3
4
5
6
7
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
Output Characteristics
300
0.8
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
250
0.6
VGS = 4.5 V
0.4
VGS = 10 V
0.2
Ciss
200
150
100
Coss
50
Crss
0.0
0
0
2
4
6
8
10
0
10
15
20
25
ID - Drain Current (A)
VDS - Drain-to-Source Voltage
On-Resistance vs. Drain Current
Capacitance
30
1.6
10
VDS = 15 V
ID = 1.7 A
VGS = 10 V
ID = 1.7 A
1.4
6
4
(Normalized)
8
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
5
1.2
1.0
0.8
2
0
0
1
2
3
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 72065
S-80642-Rev. C, 24-Mar-08
4
5
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si2303BDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.0
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
10
TJ = 150 °C
1
TJ = 25 °C
0.8
0.6
ID = 1.7 A
0.4
0.2
0.0
0.1
0
0.2
0.4
0.6
0.8
1.0
0
1.2
2
10
0.6
8
Power (W)
V GS(th) Variance (V)
8
10
On-Resistance vs. Gate-to-Source Voltage
0.9
ID = 250 µA
0.0
- 0.3
- 0.6
- 50
6
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.3
4
6
4
TA = 25 °C
2
0
- 25
0
25
50
75
100
125
0.01
150
0.1
1
10
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power
100
1000
100
I D - Drain Current (A)
10
10 µs
100 µs
Limited
by R DS(on)*
1
1 ms
10 ms
0.1
100 ms
TA = 25 °C
Single Pulse
0.01
0.1
1
DC, 100 s, 10 s, 1 s
10
100
VDS - Drain-to-Source Voltage (V)
Square Wave Pulse Duration (s)
* VGS > minimum VGS at which R DS(on) is specified
Safe Operating Area, Junction-to-Case
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Document Number: 72065
S-80642-Rev. C, 24-Mar-08
Si2303BDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 62.5 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72065.
Document Number: 72065
S-80642-Rev. C, 24-Mar-08
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Revision: 01-Jan-2022
1
Document Number: 91000