SI2315BDS-T1-E3

Si2315BDS Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 • Halogen-free Option Available • TrenchFET® Power MOSFETs: 1.8 V Rated RDS(on) (Ω) ID (A) 0.050 at VGS = - 4.5 V - 3.85 0.065 at VGS = - 2.5 V - 3.4 RoHS* 0.100 at VGS = - 1.8V - 2.7 COMPLIANT Pb-free Available TO-236 (SOT-23) G 1 3 S D 2 Top View Si2315BDS *(M5) * Marking Code Ordering Information: Si2315BDS-T1 Si2315BDS-T1-E3 (Lead (Pb)-free) Si2315BDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS - 12 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Pulsed Drain Currenta - 3.85 IS TA = 25 °C TA = 70 °C PD - 2.45 - 12 - 1.0 - 0.62 1.19 0.75 0.76 0.48 TJ, Tstg Operating Junction and Storage Temperature Range V - 3.0 - 3.0 IDM Continuous Source Current (Diode Conduction)a Power Dissipationa ID Unit - 55 to 150 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t≤5s Steady State Steady State RthJA RthJF Typ. Max. 85 105 130 166 60 75 Unit °C/W Notes: a. Surface Mounted on FR4 board. b. t ≤ 5 s. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72014 S-80642-Rev. E, 24-Mar-08 www.vishay.com 1 Si2315BDS Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Limits Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS = 0 V, ID = - 10 µA - 12 VGS(th) VDS = VGS, ID = - 250 µA - 0.45 IGSS VDS = 0 V, VGS = ± 8 V ± 100 VDS = - 12 V, VGS = 0 V -1 VDS = - 12 V, VGS = 0 V, TJ = 55 °C - 10 Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On Resistancea Forward Transconductancea Diode Forward Voltagea VDS ≤ - 5 V, VGS = - 4.5 V -6 VDS ≤ - 5 V, VGS = - 2.5 V -3 - 0.90 nA µA A VGS = - 4.5 V, ID = - 3.85 A 0.040 0.050 VGS = - 2.5 V, ID = - 3.4 A 0.050 0.065 VGS = - 1.8 V, ID = - 2.7 A 0.071 0.100 gfs VDS = - 5 V, ID = - 3.85 A 7 VSD IS = - 1.6 A, VGS = 0 V RDS(on) V Ω S - 1.2 V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = - 6 V, VGS = - 4.5 V ID ≅ - 3.85 A 8 15 nC 1.1 2.3 715 VDS = - 6 V, VGS = 0 V, f = 1 MHz pF 275 200 Switchingb Turn-On Time Turn-Off Time td(on) tr td(off) tf VDD = - 6 V, RL = 6 Ω ID ≅ - 1.0 A, VGEN = - 4.5 V RG = 6 Ω 15 20 35 50 50 70 50 75 ns Notes: a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW ≤ 300 µs duty cycle ≤ 2 %. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72014 S-80642-Rev. E, 24-Mar-08 Si2315BDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 12 12 10 10 VGS = 4.5 thru 2 V I D - Drain Current (A) I D - Drain Current (A) 8 6 1.5 V 4 8 6 4 TC = 125 °C 2 2 0 0 0.0 25 °C - 55 °C 1 2 3 4 5 6 1.0 1.5 2.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.30 1200 0.25 1000 0.20 0.15 VGS = 1.8 V 0.10 0.5 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0 2.5 Ciss 800 600 400 Coss VGS = 2.5 V Crss 200 0.05 VGS = 4.5 V 0 0.00 0 2 4 6 8 10 0 12 4 6 8 10 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 5 12 1.6 VDS = 6 V ID = 3.5 A 1.4 3 2 1 (Normalized) 4 RDS(on) - On-Resistance V GS - Gate-to-Source Voltage (V) 2 VGS = 4.5 V ID = 3.5 A 1.2 1.0 0.8 0 0 2 4 6 Qg - Total Gate Charge (nC) Gate Charge Document Number: 72014 S-80642-Rev. E, 24-Mar-08 8 10 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si2315BDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 R DS(on) - On-Resistance (Ω) 20 I S - Source Current (A) 10 TJ = 150 °C TJ = 25 °C 0.2 ID = 3.5 A 0.1 0.0 1 0.0 0.3 0.2 0.4 0.6 0.8 1.0 0 1.2 1 3 4 5 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.6 12 ID = 250 µA 0.4 10 8 0.2 Power (W) V GS(th) Variance (V) 2 0.0 6 - 0.2 4 - 0.4 2 TA = 25 °C - 0.6 - 50 0 - 25 0 25 50 75 100 125 150 0.01 0.1 TJ - Temperature (°C) 1 10 100 600 Time (s) Threshold Voltage Single Pulse Power 100 I D - Drain Current (A) 10 Limited by RDS(on)* 1 ms, 100 µs 10 ms 100 ms 1 1s 10 s DC, 100 s 0.1 TA = 25 °C Single Pulse 0.01 0.1 * VGS 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area www.vishay.com 4 Document Number: 72014 S-80642-Rev. E, 24-Mar-08 Si2315BDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: PDM 0.1 0.1 t1 0.05 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 130 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72014. Document Number: 72014 S-80642-Rev. E, 24-Mar-08 www.vishay.com 5 Package Information Vishay Siliconix SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS Min INCHES Max Min Max 0.044 A 0.89 1.12 0.035 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 Document Number: 71196 09-Jul-01 www.vishay.com 1 Application Note 826 Vishay Siliconix 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72609 Revision: 21-Jan-08 www.vishay.com 25 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000