SI2337DS-T1-GE3

Si2337DS www.vishay.com Vishay Siliconix P-Channel 80-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) a 0.270 at VGS = -10 V -2.2 0.303 at VGS = -6 V -2.1 VDS (V) -80 Qg (TYP.) 7 • TrenchFET® power MOSFET • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 SOT-23 (TO-236) Available S D 3 G 2 S 1 G Top View D P-Channel MOSFET Marking Code: E7 Ordering Information: Si2337DS-T1-E3 (Lead (Pb)-free) Si2337DS-T1-GE3 (Lead (Pb)-free and halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS -80 Gate-Source Voltage VGS ± 20 TC = 25 °C TC = 70 °C Continuous Drain Current (TJ = 150 °C) TA = 25 °C -1.75 ID -1.2 b, c -0.96 b, c IDM TC = 25 °C Continuous Source-Drain Diode Current TA = 25 °C Avalanche Current L = 0.1 mH Single-Pulse Avalanche Energy Maximum Power Dissipation -2.1 IS -0.63 b, c IAS 11 EAS 6 TC = 25 °C 2.5 1.6 PD mJ W 0.76 b, c 0.48 b, c TA = 70 °C Operating Junction and Storage Temperature Range A -7 TC = 70 °C TA = 25 °C V -2.2 TA = 70 °C Pulsed Drain Current UNIT TJ, Tstg -50 to +150 Soldering Recommendations (Peak Temperature) d, e °C 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM Maximum Junction-to-Ambient b, d t ≤ 10 s RthJA 120 166 Maximum Junction-to-Foot (Drain) Steady State RthJF 40 50 UNIT °C/W Notes a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 166 °C/W. S15-0683-Rev. E, 06-Apr-15 Document Number: 73533 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2337DS www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = -250 μA -80 - - V - -35.8 - - 5.45 - Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ ID = -250 μA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250 μA -2 - -4 V IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA VDS = -80 V, VGS = 0 V - - -1 VDS = -80 V, VGS = 0 V, TJ = 55 °C - - -10 Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Current a ID(on) Drain-Source On-State Resistance a Forward Transconductance a VDS ≥ 5 V, VGS = -10 V -7 - - VGS = -10 V, ID = -1.2 A - 0.216 0.270 VGS = -6 V, ID = -1.1 A - 0.242 0.303 VDS = -15 V, ID = -1.2 A - 4.3 - - 500 - - 40 - - 25 - - 11 17 - 7 11 VDS = -40 V, VGS = -6 V, ID = -1.2 A - 2.1 - - 3.2 - f = 1 MHz - 4.8 - - 10 15 - 15 23 - 20 30 tf - 15 23 td(on) - 15 23 RDS(on) gfs μA A Ω S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VDS = -40 V, VGS = 0 V, f = 1 MHz VDS = -40 V, VGS = -10 V, ID = -1.2 A td(on) tr td(off) tr td(off) VDD = -40 V, RL = 42 Ω ID ≅ -0.96 A, VGEN = -10 V, Rg = 1 Ω VDD = -40 V, RL = 42 Ω ID ≅ -0.96 A, VGEN = -6 V, Rg = 1 Ω tf - 18 27 - 20 30 - 12 18 - - -2.1 - - -7 pF nC Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current a ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C IS = 0.63 A IF = 0.63 A, dI/dt = 100 A/μs, TJ = 25 °C A - -0.8 -1.2 V - 30 45 ns - 45 70 nC - 25 - - 5 - ns Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-0683-Rev. E, 06-Apr-15 Document Number: 73533 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2337DS www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 7 7 VGS = 10 thru 6 V 6 I D - Drain Current (A) 5 I D - Drain Current (A) 6 VGS = 5 V 4 3 2 1 5 4 3 TA = - 55 °C 2 TA = 25 °C TA = 125 °C 1 VGS = 4 V 0 0 0 1 2 3 0.0 4 1.0 VDS - Drain-to-Source Voltage (V) 2.0 3.0 4.0 5.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.30 700 VGS = 6 V 0.25 C - Capacitance (pF) R DS(on) - On-Resistance () 600 0.20 VGS = 10 V 0.15 Ciss 500 400 300 200 100 0.10 Crss 0 0 1 2 3 4 5 6 7 0 10 20 30 40 50 60 70 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 80 2.0 R DS(on) - On-Resistance (Normalized) 10 VGS - Gate-to-Source Voltage (V) Coss ID =1.2 A 8 VDS = 40 V 6 VDS = 64 V 4 2 0 0 2 4 6 8 Qg - Total Gate Charge (nC) Gate Charge S15-0683-Rev. E, 06-Apr-15 10 12 1.8 ID = 1.2 A VGS = 10 V 1.6 VGS = 6 V 1.4 1.2 1.0 0.8 0.6 0.4 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 73533 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2337DS www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 R DS(on) - Drain-to-Source On-Resistance () 0.6 I S - Source Current (A) 10 TJ = 150 °C TJ = 25 °C 1 0.1 0.5 TA = 125 °C 0.4 0.3 TA = 25 °C 0.2 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 3 5 6 7 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 3.6 16 3.4 14 ID = 250 µA 12 Power (W) 3.0 2.8 10 8 2.6 6 2.4 4 2.2 2 2.0 - 50 4 VSD - Source-to-Drain Voltage (V) 3.2 VGS(th) (V) ID = 1.2 A - 25 0 25 50 75 100 125 0 0.01 150 0.1 TJ - Temperature (°C) Threshold Voltage 1 10 Time (s) 100 1000 Single Pulse Power, Junction-to-Ambient 1000 ID - Drain Current (A) 100 Limited by RDS(on)* 10 IDM Limited ID(on) Limited 1 1 ms 10 ms 100 ms 0.1 1s 10 s 0.01 TA = 25 °C Single Pulse DC BVDSS Limited 0.001 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S15-0683-Rev. E, 06-Apr-15 Document Number: 73533 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2337DS www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2.8 2.5 2.4 Power (W) I D - Drain Current (A) 2.0 2.0 1.6 1.2 1.5 1.0 0.8 0.5 0.4 0.0 0.0 0 25 50 75 100 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating IC - Peak Avalanche Current (A) 10 TA 1 1.0E-6 L IA BV - V DD 10.0E-6 100.0E-6 1.0E-3 10.0E-3 TA - Time In Avalanche (s) Single Pulse Avalanche Capability * The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S15-0683-Rev. E, 06-Apr-15 Document Number: 73533 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2337DS www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 166 °C/W 3. TJM - T A = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73533. S15-0683-Rev. E, 06-Apr-15 Document Number: 73533 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS Min INCHES Max Min Max 0.044 A 0.89 1.12 0.035 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 Document Number: 71196 09-Jul-01 www.vishay.com 1 AN807 Vishay Siliconix Mounting LITTLE FOOTR SOT-23 Power MOSFETs Wharton McDaniel Surface-mounted LITTLE FOOT power MOSFETs use integrated circuit and small-signal packages which have been been modified to provide the heat transfer capabilities required by power devices. Leadframe materials and design, molding compounds, and die attach materials have been changed, while the footprint of the packages remains the same. See Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs, (http://www.vishay.com/doc?72286), for the basis of the pad design for a LITTLE FOOT SOT-23 power MOSFET footprint . In converting this footprint to the pad set for a power device, designers must make two connections: an electrical connection and a thermal connection, to draw heat away from the package. ambient air. This pattern uses all the available area underneath the body for this purpose. 0.114 2.9 0.081 2.05 0.150 3.8 0.059 1.5 0.0394 1.0 0.037 0.95 FIGURE 1. Footprint With Copper Spreading The electrical connections for the SOT-23 are very simple. Pin 1 is the gate, pin 2 is the source, and pin 3 is the drain. As in the other LITTLE FOOT packages, the drain pin serves the additional function of providing the thermal connection from the package to the PC board. The total cross section of a copper trace connected to the drain may be adequate to carry the current required for the application, but it may be inadequate thermally. Also, heat spreads in a circular fashion from the heat source. In this case the drain pin is the heat source when looking at heat spread on the PC board. Figure 1 shows the footprint with copper spreading for the SOT-23 package. This pattern shows the starting point for utilizing the board area available for the heat spreading copper. To create this pattern, a plane of copper overlies the drain pin and provides planar copper to draw heat from the drain lead and start the process of spreading the heat so it can be dissipated into the Document Number: 70739 26-Nov-03 Since surface-mounted packages are small, and reflow soldering is the most common way in which these are affixed to the PC board, “thermal” connections from the planar copper to the pads have not been used. Even if additional planar copper area is used, there should be no problems in the soldering process. The actual solder connections are defined by the solder mask openings. By combining the basic footprint with the copper plane on the drain pins, the solder mask generation occurs automatically. A final item to keep in mind is the width of the power traces. The absolute minimum power trace width must be determined by the amount of current it has to carry. For thermal reasons, this minimum width should be at least 0.020 inches. The use of wide traces connected to the drain plane provides a low-impedance path for heat to move away from the device. www.vishay.com 1 Application Note 826 Vishay Siliconix 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72609 Revision: 21-Jan-08 www.vishay.com 25 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Revision: 13-Jun-16 1 Document Number: 91000