SQ2337ES-T1-GE3

SQ2337ES www.vishay.com Vishay Siliconix Automotive P-Channel 80 V (D-S) 175 °C MOSFET FEATURES SOT-23 (TO-236) • TrenchFET® Power MOSFET • AEC-Q101 Qualified c D 3 • 100 % Rg and UIS Tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2 S S 1 G Top View G PRODUCT SUMMARY VDS (V) - 80 RDS(on) (Ω) at VGS = - 10 V 0.290 RDS(on) (Ω) at VGS = - 6 V 0.314 ID (A) - 2.2 Configuration D P-Channel MOSFET Single ORDERING INFORMATION Package SOT-23 Lead (Pb)-free and halogen-free SQ2337ES (for detailed order number please see www.vishay.com/doc?79771) ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS - 80 Gate-source voltage VGS ± 20 Continuous drain current TC = 25 °C TC = 125 °C Continuous source current (diode conduction) Pulsed drain current a Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation a L = 0.1 mH TC = 25 °C TC = 125 °C Operating junction and storage temperature range ID V - 2.2 - 1.3 IS - 3.7 IDM -9 IAS - 11 EAS 6 PD UNIT 3 1 A mJ W TJ, Tstg - 55 to + 175 °C SYMBOL LIMIT UNIT RthJA 166 RthJF 50 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-foot (drain) PCB mount b °C/W Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. When mounted on 1" square PCB (FR-4 material) c. Parametric verification ongoing S21-1074-Rev. C, 15-Nov-2021 Document Number: 66717 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ2337ES www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage VDS VGS = 0, ID = - 250 μA - 80 - - VGS(th) VDS = VGS, ID = - 250 μA - 1.5 - - 2.5 VDS = 0 V, VGS = ± 20 V IGSS - - ± 100 VGS = 0 V VDS = - 80 V - - -1 - - - 50 Zero gate voltage drain current IDSS VGS = 0 V VDS = - 80 V, TJ = 125 °C VGS = 0 V VDS = - 80 V, TJ = 175 °C - - - 150 On-state drain current a ID(on) VGS = - 10 V VDS ≥ 5 V -8 - - VGS = - 10 V ID = - 1.2 A - 0.241 0.290 VGS = - 6 V ID = - 1.1 A - 0.261 0.314 - 3.5 - - 495 620 Drain-source on-state resistance a Forward transconductance b RDS(on) gfs VDS = - 15 V, ID = - 1.2 A V nA μA A Ω S Dynamic b Input capacitance Ciss Output capacitance Coss - 40 55 Reverse transfer capacitance Crss - 30 38 Total gate charge c Qg - 11.5 18 - 1.9 - - 3.3 - 2.2 4.43 7 - 5 8 - 10 15 - 18 27 - 8 12 Gate-source charge c Gate-drain charge c Gate resistance Rise time c Fall time c VDS = - 40 V, ID = - 1.2 A f = 1 MHz td(on) tr c VGS = - 10 V VDS = - 40 V, f = 1 MHz Qgd Rg Turn-on delay time c Turn-off delay time Qgs VGS = 0 V td(off) VDD = - 40 V, RL = 41.6 Ω ID ≅ - 0.96 A, VGEN = - 10 V, Rg = 1 Ω tf Source-Drain Diode Ratings and Characteristics pF nC Ω ns b Pulsed current a ISM Forward voltage VSD IF = - 0.8 A, VGS = 0 - - -9 A - - 0.8 - 1.2 V Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S21-1074-Rev. C, 15-Nov-2021 Document Number: 66717 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ2337ES www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 7 7 VGS = 10 V thru 5V 6 ID - Drain Current (A) ID - Drain Current (A) 6 VGS = 4 V 4 3 1 4 TC = 25 °C 3 1 TC = 125 °C TC = - 55 °C 0 0 0 1 2 3 4 0 5 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1.0 5 gfs - Transconductance (S) 4 RDS(on) - On-Resistance (Ω) TC = - 55 °C TC = 25 °C 3 TC = 125 °C 2 0.8 0.6 0.4 VGS = 4.5 V 0.2 1 VGS = 10 V 0.0 0 0.0 0.4 0.8 1.2 1.6 0 2.0 1 ID - Drain Current (A) Transconductance 4 6 7 On-Resistance vs. Drain Current 10 800 ID = 1.2 A VGS - Gate-to-Source Voltage (V) 700 600 C - Capacitance (pF) 3 ID - Drain Current (A) Ciss 500 400 300 200 8 V DS = 40 V 6 4 2 Coss 100 Crss 0 0 0 10 20 30 40 50 60 VDS - Drain-to-Source Voltage (V) Capacitance S21-1074-Rev. C, 15-Nov-2021 70 80 0 3 6 9 12 15 Qg - Total Gate Charge (nC) Gate Charge Document Number: 66717 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ2337ES www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 5.0 ID = 1.2 A 2.1 4.0 VGS = 10 V RDS(on) - On-Resistance (Ω) RDS(on) - On-Resistance (Normalized) 2.5 1.7 VGS = 6 V 1.3 3.0 2.0 0.9 1.0 0.5 0.0 TJ = 150 °C TJ = 25 °C - 50 - 25 0 25 50 75 100 125 150 0 175 2 TJ - Junction Temperature (°C) 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage - 85 1 VDS - Drain-to-Source Voltage (V) 10 IS - Source Current (A) 4 TJ = 150 °C 0.1 TJ = 25 °C 0.01 ID = 1 mA - 90 - 95 - 100 - 105 - 110 0.001 0.0 0.2 0.4 0.6 0.8 1.0 - 50 - 25 1.2 0 VSD - Source-to-Drain Voltage (V) 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Source-Drain Diode Forward Voltage Drain Source Breakdown vs. Junction Temperature 1.0 IDM Limited ID - Drain Current (A) ID = 250 μA 0.7 VGS(th) Variance (V) 10 0.4 ID = 5 mA 0.1 100 µs Limited by RDS(on)* 1 1 ms 10 ms 0.1 100 ms - 0.2 BVDSS Limited TA = 25 °C Single Pulse - 0.5 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) Threshold Voltage S21-1074-Rev. C, 15-Nov-2021 125 150 175 0.01 0.01 0.1 1 10 1s 10 s, DC 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Document Number: 66717 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ2337ES www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJF = 50 °C/W 0.02 3. TJM - TTf = PDMZthFf (t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?66717. S21-1074-Rev. C, 15-Nov-2021 Document Number: 66717 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS Min INCHES Max Min Max 0.044 A 0.89 1.12 0.035 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 Document Number: 71196 09-Jul-01 www.vishay.com 1 Application Note 826 Vishay Siliconix 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72609 Revision: 21-Jan-08 www.vishay.com 25 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000