SQ7002K-T1-GE3

SQ7002K Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V 1.30 RDS(on) () at VGS = 4.5 V 1.90 ID (A) 0.32 Configuration Single D TO-236 SOT-23 G • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • AEC-Q101 Qualifiedd • ESD Protection 2000 V • Compliant to RoHS Directive 2002/95/EC 60 1 3 D G S 2 Top View S SQ7002K (8K)* * Marking Code 8K N-Channel MOSFET ORDERING INFORMATION Package SOT-23 Lead (Pb)-free and Halogen-free SQ7002K-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 20 Continuous Drain Currenta TC = 25 °C TC = 125 °C Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb Maximum Power Dissipationb TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID V 0.32 0.24 IS 0.32 IDM 0.8 PD UNIT 0.5 0.17 A W TJ, Tstg - 55 to + 175 °C SYMBOL LIMIT UNIT RthJA 350 RthJF 300 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) PCB Mountc °C/W Notes a. Package limited. b. Pulse test; pulse width  300 µs, duty cycle  2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. Document Number: 65547 S11-0225-Rev. B, 14-Feb-11 www.vishay.com 1 SQ7002K Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VDS VGS = 0 V, ID = 250 µA 60 - - VGS(th) VDS = VGS, ID = 250 µA 1.0 1.8 2.5 VDS = 0 V, VGS = ± 20 V - - ± 50 VDS = 0 V, VGS = ± 12 V - - ±1 UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage IGSS VGS = 0 V VDS = 60 V - - 1 Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = 60 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 60 V, TJ = 175 °C - - 150 On-State Drain Currenta ID(on) VGS = 10 V VDS5 V 0.5 - - VGS = 10 V ID = 0.5 A - 1.07 1.30 VGS = 10 V ID = 0.5 A, TJ = 125 °C - - 2.33 VGS = 10 V ID = 0.5 A, TJ = 175 °C - - 2.97 VGS = 4.5 V ID = 0.2 A - 1.42 1.90 - 100 - - 19 24 - 4.8 6 Drain-Source On-State Resistancea Forward Transconductanceb RDS(on) gfs VDS = 10 V, ID = 0.2 A V µA µA A  S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss - 2.3 3 Total Gate Chargec Qg - 0.9 1.4 VGS = 0 V VDS = 30 V, f = 1 MHz Gate-Source Chargec Qgs - 0.3 - Gate-Drain Chargec Qgd - 0.4 - Turn-On Delay Timec td(on) - 14.6 22 Rise Timec Turn-Off Delay Timec Fall Timec tr td(off) VGS = 4.5 V VDS = 30 V, ID = 0.25 A VDD = 30 V, RL = 150  ID  0.250 A, VGEN = 4.5 V, Rg = 120  tf pF nC - 15.3 23 - 8.6 13 - 10.6 16 - - 0.8 A - 0.83 1.2 V ns Source-Drain Diode Ratings and Characteristics (TC = 25 °C)b Pulsed Currenta ISM Forward Voltage VSD IF = 0.2 A, VGS = 0 V Notes a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 65547 S11-0225-Rev. B, 14-Feb-11 SQ7002K Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 0.005 1.0E+00 1.0E-02 IGSS - Gate Current (A) IGSS - Gate Current (A) 0.004 TJ = 25 °C 0.003 0.002 1.0E-04 TJ = 150 °C 1.0E-06 TJ = 25 °C 0.001 1.0E-08 0.000 1.0E-10 0 6 12 18 24 0 30 6 12 18 24 30 VGS - Gate Source Voltage (V) VGS - Gate Source Voltage (V) Gate Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage 1.0 1.0 VGS = 10 V thru 5 V 0.8 VGS = 4 V I D - Drain Current (A) I D - Drain Current (A) 0.8 0.6 0.4 VGS = 3 V 0.2 0.6 0.4 TC = 25 °C 0.2 TC = 125 °C TC = - 55 °C 0.0 0.0 0 1 2 3 4 5 0 1 2 5 6 Transfer Characteristics Output Characteristics 5 35 4 28 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 4 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 3 2 3 VGS = 4.5 V 21 Ciss 14 Coss 7 1 VGS = 10 V Crss 0 0 0.0 0.2 0.4 0.6 0.8 ID - Drain Current (A) On-Resistance vs. Drain Current Document Number: 65547 S11-0225-Rev. B, 14-Feb-11 1.0 0 12 24 36 48 60 VDS - Drain-to-Source Voltage (V) Capacitance www.vishay.com 3 SQ7002K Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2.5 5 ID = 0.2 A 2.1 VDS = 30 V 3 2 VGS = 10 V (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) ID = 0.25 A 4 1.7 VGS = 4.5 V 1.3 0.9 1 0.5 - 50 0 0.0 0.3 0.6 0.9 1.2 1.5 - 25 0 Qg - Total Gate Charge (nC) 50 75 100 125 150 175 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 10 R DS(on) - On-Resistance (Ω) 1 I S - Source Current (A) 25 TJ = 150 °C 0.1 TJ = 25 °C 0.01 8 6 4 TJ = 150 °C 2 TJ = 25 °C 0 0.001 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 1 2 3 4 5 6 7 8 9 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.5 80 VDS - Drain-to-Source Voltage (V) ID = 1 mA VGS(th) Variance (V) 0.2 - 0.1 ID = 5 mA - 0.4 ID = 250 µA - 0.7 - 1.0 - 50 - 25 www.vishay.com 4 0 25 50 75 100 125 150 175 77 74 71 68 65 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Temperature (°C) TJ - Junction Temperature (°C) Threshold Voltage Drain Source Breakdown vs. Junction Temperature Document Number: 65547 S11-0225-Rev. B, 14-Feb-11 SQ7002K Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 10 IDM Limited ID - Drain Current (A) 1 100 μs Limited by RDS(on)* 1 ms 0.1 ID Limited 10 ms 100 ms 0.01 1s 10 s, DC TC = 25 °C Single Pulse 0.001 0.01 BVDSS Limited 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 350 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Document Number: 65547 S11-0225-Rev. B, 14-Feb-11 www.vishay.com 5 SQ7002K Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. 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