SI3460DDV-T1-GE3

Si3460DDV Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.028 at VGS = 4.5 V 7.9 0.032 at VGS = 2.5 V 7.4 0.038 at VGS = 1.8 V 6.8 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 6.7 nC APPLICATIONS TSOP-6 Top View D 1 6 D 3 mm D 2 5 D • DC/DC Converters • Boost Converters • Load Switch D (1, 2, 5, 6) Marking Code G 3 4 BA S XXX G Lot Traceability and Date Code (3) Part # Code (4) 2.85 mm S Ordering Information: Si3460DDV-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 TC = 25 °C Continuous Drain Current (TJ = 150 °C) 6.3 ID TA = 25 °C 6.2a, b 5.0a, b TA = 70 °C Continuous Source-Drain Diode Current IDM TC = 25 °C 2.2 IS TA = 25 °C 1.4a, b Avalanche Current IAS 8 EAS 3.2 TC = 25 °C mJ 2.7 TC = 70 °C 1.7 PD TA = 25 °C W 1.7a, b 1.1a, b TA = 70 °C Operating Junction and Storage Temperature Range A 20 Single Avalanche Energy Maximum Power Dissipation V 7.9 TC = 70 °C Pulsed Drain Current Unit TJ, Tstg - 55 to 150 Soldering Recommendations (Peak Temperature)d, e °C 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Maximum Junction-to-Ambienta, c t≤5s RthJA 61 74 Maximum Junction-to-Foot (Drain) Steady State RthJF 38 46 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 5 s. c. Maximum under steady state conditions is 120 °C/W. d. Based on TC = 25 °C. Document Number: 66572 S10-0789-Rev. A, 05-Apr-10 www.vishay.com 1 Si3460DDV Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage ΔVDS/TJ VDS Temperature Coefficient ID = 250 µA VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA IGSS Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs V 21 mV/°C - 2.6 1.0 V VDS = 0 V, VGS = ± 8 V ± 100 nA VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 70 °C 10 VDS ≤ 5 V, VGS = 4.5 V 0.4 20 µA A VGS = 4.5 V, ID = 5.1 A 0.023 0.028 VGS = 2.5 V, ID = 4.7 A 0.027 0.032 VGS = 1.8 V, ID = 2.5 A 0.031 0.038 VDS = 10 V, ID = 5.1 A 35 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 666 VDS = 10 V, VGS = 0 V, f = 1 MHz tr pF VDS = 10 V, VGS = 8 V, ID = 5 A 12 18 6.7 10.1 VDS = 10 V, VGS = 4.5 V, ID = 5 A 0.95 VDD = 10 V, RL = 2 Ω ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω 0.4 2.1 4.2 6 12 11 20 21 32 tf 8 16 td(on) 5 10 12 18 19 29 8 16 tr td(off) nC 0.5 f = 1 MHz td(on) td(off) 93 41 VDD = 10 V, RL = 2 Ω ID ≅ 5 A, VGEN = 8 V, Rg = 1 Ω tf Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 2.2 20 IS = 5 A, VGS = 0 V IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.8 1.2 V 11 20 ns 3 6 nC 7 4 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 66572 S10-0789-Rev. A, 05-Apr-10 Si3460DDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 5 V GS = 5 V thru 1.8 V 4 I D - Drain Current (A) I D - Drain Current (A) 15 10 3 T C = 25 °C 2 5 1 V GS = 1.5 V T C = 125 °C V GS = 1 V 0.5 1.0 1.5 T C = - 55 °C 0 0.0 2.0 0.3 0.6 0.9 1.2 V DS - Drain-to-Source Voltage (V) V GS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.05 900 0.04 675 1.5 Ciss C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0 0.0 V GS = 1.8 V 0.03 V GS = 2.5 V V GS = 4.5 V 0.02 450 Coss 225 Crss 0 0.01 0 5 10 15 0 20 5 10 15 20 V DS - Drain-to-Source Voltage (V) ID - Drain Current (A) Capacitance On-Resistance vs. Drain Current and Gate Voltage 1.7 8 1.5 V DS = 10 V V DS = 5 V 4 V DS = 16 V 2 V GS = 2.5 V; I D = 3 A (Normalized) 6 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) ID = 5 A 1.3 1.1 V GS = 4.5 V; I D = 5 A 0.9 0 0 3 6 9 12 15 0.7 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) T J - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 66572 S10-0789-Rev. A, 05-Apr-10 150 www.vishay.com 3 Si3460DDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 0.060 T J = 150 °C R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 5 A T J = 25 °C 1 0.045 T J = 125 °C 0.030 T J = 25 °C 0.015 0 0.1 0.0 0.3 0.6 0.9 0 1.2 2 4 6 8 V SD - Source-to-Drain Voltage (V) V GS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.80 25 20 0.65 15 Power (W) VGS(th) (V) ID = - 5 mA 0.50 ID = - 250 μA 10 0.35 5 0.20 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 100 Time (s) T J - Temperature (°C) Single Pulse Power (Junction-to-Ambient) Threshold Voltage 100 I D - Drain Current (A) Limited by R DS(on)* 10 100 μA 1 ms 1 10 ms 0.1 100 ms 1 s, 10 s TA = 25 °C Single Pulse DC BVDSS Limited 0.01 0.1 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 66572 S10-0789-Rev. A, 05-Apr-10 Si3460DDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 I D - Drain Current (A) 8 Package Limited 6 4 2 0 0 25 50 75 100 125 150 T C - Case Temperature (°C) 3.5 1.5 2.8 1.2 2.1 0.9 Power (W) Power (W) Current Derating* 1.4 0.7 0.6 0.3 0.0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 T C - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 66572 S10-0789-Rev. A, 05-Apr-10 www.vishay.com 5 Si3460DDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 120 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?66572. www.vishay.com 6 Document Number: 66572 S10-0789-Rev. A, 05-Apr-10 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1