SI3460BDV-T1-E3

Si3460BDV New Product Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.027 at VGS = 4.5 V 20 0.032 at VGS = 2.5 V 0.040 at VGS = 1.8 V ID (A)a 8 8 8 9 nC Qg (Typ) FEATURES • TrenchFET® Power MOSFET APPLICATIONS • Load Switch for Portable Applications • Load Switch for Low Voltage Bus RoHS COMPLIANT TSOP-6 Top View D 1 6 D D (1, 2, 5, 6) 3 mm D 2 5 D Marking Code G 3 4 S AF XXX Lot Traceability and Date Code Part # Code 2.85 mm S (4) N-Channel MOSFET G (3) Ordering Information: Si3460BDV-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS Limit 20 ±8 8a 7.1 6.7b, c 5.4b, c 20 2.9 1.7b, c 3.5 2.2 2b, c 1.3b, c - 55 to 150 260 Unit V A PD TJ, Tstg W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t ≤ 5 sec Steady State Symbol RthJA RthJF Typical 50 30 Maximum 62.5 36 Unit °C/W Notes: a. Package limited b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 sec. d. Maximum under steady state conditions is 110 °C/W. Document Number: 74412 S-70187-Rev. A, 29-Jan-07 www.vishay.com 1 Si3460BDV Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamic b Symbol VDS ΔVDS /TJ ΔVGS(th) /TJ VGS(th) IGSS IDSS ID(on) rDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf IS ISM VSD trr Qrr ta tb Test Conditions VGS = 0 V, ID = 250 µA ID = 250 µA VDS = VGS , ID = 250 µA VDS = 0 V, VGS = ± 8 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 70 °C VDS ≤ 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 5.1 A VGS = 2.5 V, ID = 4.7 A VGS = 1.8 V, ID = 2.5 A VDS = 10 V, ID = 5.1 A Min 20 Typ Max Unit V 22.5 - 2.9 0.45 1.0 ± 100 1 10 20 0.023 0.027 0.033 22 0.027 0.032 0.040 mV/°C V ns µA A Ω S Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time 860 VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 8 V, ID = 8 A VDS = 10 V, VGS = 4.5 V, ID = 8 A f = 1 MHz VDD = 10 V, RL = 1.9 Ω ID ≅ 5.4 A, VGEN = 4.5 V, Rg = 1 Ω 110 65 16 9 1.4 1.4 3.2 7 60 25 6 5 VDD = 10 V, RL = 1.9 Ω ID ≅ 5.4 A, VGEN = 8 V, Rg = 1 Ω 15 25 5 TC = 25 °C IS = 5.4 A, VGS = 0 V 0.8 20 IF = 5.4 A, di/dt = 100 A/µs, TJ = 25 °C 9 12 8 15 90 40 10 10 25 40 10 8 20 1.2 40 20 ns Ω 24 13.5 nC pF A V ns nC ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74412 S-70187-Rev. A, 29-Jan-07 Si3460BDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 VGS = 5 thru 2 V 8 15 I D - Drain Current (A) ID - Drain Current (A) 6 10 10 1.5 V 5 1V 0 0.0 4 TC = 125 °C 2 25 °C 0 0.0 - 55 °C 0.4 0.8 1.2 1.6 2.0 0.3 0.6 0.9 1.2 1.5 1.8 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.060 1200 Transfer Characteristics rDS(on) - On-Resistance (Ω) VGS = 1.8 V C - Capacitance (pF) 0.050 900 Ciss 0.040 600 0.030 VGS = 2.5 V 300 Coss 0.020 0 5 10 ID - Drain Current (A) VGS = 4.5 V 15 20 0 0 Crss 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 8 V S - Gate-to-Source Voltage (V) G 7 6 5 4 3 2 1 0 0 3 6 9 12 15 18 VDS = 16 V ID = 8 A VDS = 10 V ID = 8 A rDS(on) - On-Resistance (Normalized) 1.8 Capacitance 1.6 ID = 5.1 A 1.4 1.2 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 74412 S-70187-Rev. A, 29-Jan-07 www.vishay.com 3 Si3460BDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.08 0.07 IS - Source Current (A) rDS(on) - On-Resistance (Ω) 0.06 0.05 0.04 0.03 0.02 0.01 1 0 0.2 0.4 0.6 0.8 1 1.2 VSD - Source-to-Drain Voltage (V) 0.00 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) ID = 5.1 A 125 °C ID = 5.1 A 25 °C T J = 150 °C 10 T J = 25 °C Source-Drain Diode Forward Voltage 0.8 ID = 250 µA 40 50 On-Resistance vs. Gate-to-Source Voltage 0.7 V GS(th) Variance (V) 0.6 Power (W) 30 0.5 20 0.4 10 0.3 0.2 - 50 - 25 0 25 50 75 100 125 150 0 10-3 10-2 10-1 1 10 100 600 TJ - Temperature (°C) Time (sec) Threshold Voltage 100 *rDS(on) Limited 10 I D - Drain Current (A) Single Pulse Power (Junction-to-Ambient) 10 s 1 1s 100 ms 10 ms 1 ms dc BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) *VGS minimum VGS at which rDS(on) is specified 0.1 TA = 25 °C Single Pulse Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 74412 S-70187-Rev. A, 29-Jan-07 Si3460BDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 4 8 3 Drain Current (A) Package Limited 6 Power Dissipation (W) 2 4 1 2 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 Foot (Drain) Temperature ( C) Foot (Drain) Temperature ( C) Current Derating* Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74412 S-70187-Rev. A, 29-Jan-07 www.vishay.com 5 Si3460BDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 P DM 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 90 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74412. www.vishay.com 6 Document Number: 74412 S-70187-Rev. A, 29-Jan-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1