SI4936CDY-T1-E3

Si4936CDY www.vishay.com Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES SO-8 Dual D1 8 D1 7 D2 6 D2 5 • TrenchFET® power MOSFET • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Top View 2 1 G1 S1 3 S2 • Low current DC/DC conversion 4 G2 • Notebook system power D1 D2 PRODUCT SUMMARY VDS (V) 30 RDS(on) max. () at VGS = 10 V 0.040 RDS(on) max. () at VGS = 4.5 V 0.050 Qg typ. (nC) 2.8 ID (A) d 5.8 Configuration G1 G2 S1 S2 N-Channel MOSFET Dual N-Channel MOSFET ORDERING INFORMATION Package SO-8 Lead (Pb)-free and halogen-free Si4936CDY-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 30 Gate-source voltage VGS ± 20 TC = 25 °C 4.6 ID TA = 25 °C 5 a, b 4 a, b TA = 70 °C Pulsed drain current IDM TC = 25 °C Continuous source-drain diode current 1.9 1.4 a, b TC = 25 °C 2.3 TC = 70 °C 1.5 PD TA = 25 °C W 1.7 a, b 1.1 a, b TA = 70 °C Operating junction and storage temperature range A 20 IS TA = 25 °C Maximum power dissipation V 5.8 TC = 70 °C Continuous drain current (TJ = 150 °C) UNIT TJ, Tstg -55 to +150 °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM Maximum junction-to-ambient a, c t  10 s RthJA 58 75 Maximum junction-to-foot (drain) Steady state RthJF 42 55 UNIT °C/W Notes a. Surface mounted on 1" x 1" FR4 board b. t = 10 s c. Maximum under steady state conditions is 110 °C/W d. Based on TC = 25 °C S09-0390-Rev. C, 09-Mar-09 Document Number: 69097 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4936CDY www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 30 - - V - 32 - - -5 - Static Drain-source breakdown voltage VDS temperature coefficient VDS/TJ ID = 250 μA mV/°C VGS(th) temperature coefficient VGS(th)/TJ Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA 1.2 - 3 V IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA VDS = 30 V, VGS = 0 V - - 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C - - 10 VDS  5 V, VGS = 10 V 15 - - A VGS = 10 V, ID = 5 A - 0.033 0.040 VGS = 4.5 V, ID = 4.7 A - 0.041 0.050  VDS = 10 V, ID = 5 A - 15 - - 325 - VDS = 15 V, VGS = 0 V, f = 1 MHz - 60 - - 30 - Gate-source leakage Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a RDS(on) gfs μA S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = 15 V, VGS = 10 V, ID = 5 A - 6 9 - 2.8 4.2 VDS = 15 V, VGS = 4.5 V, ID = 5 A - 1.1 - - 0.8 - f = 1 MHz 0.6 2.8 5.6 - 12 18 td(on) tr VDD = 15 V, RL = 3.8  ID  4 A, VGEN = 4.5 V, Rg = 1  - 13 20 - 16 25 tf - 11 17 td(on) - 4 8 - 9 18 - 11 20 - 8 15 td(off) tr td(off) VDD = 15 V, RL = 3.8  ID  4 A, VGEN = 10 V, Rg = 1  tf pF nC  ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C - - 1.9 - - 20 IS = 4 A, VGS = 0 V - 0.8 1.2 - 11 20 ns IF = 4 A, di/dt = 100 A/μs, TJ = 25 °C - 4 8 nC - 6 - - 5 - A V ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing        Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S09-0390-Rev. C, 09-Mar-09 Document Number: 69097 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4936CDY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 5 VGS = 10 V thru 4 V 4 I D - Drain Current (A) I D - Drain Current (A) 15 10 VGS = 3 V 5 3 2 TC = 25 °C 1 TC = 125 °C VGS = 1 V, 2 V 0 0.0 TC = - 55 °C 0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 400 0.06 300 0.05 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) Ciss VGS = 4.5 V 0.04 VGS = 10 V 200 0.03 100 0.02 0 Coss Crss 0 5 10 15 0 20 5 10 15 25 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 30 1.7 ID = 5 A VGS = 10 V; ID = 5 A 8 6 VDS = 15 V VDS = 24 V 4 2 (Normalized) 1.5 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 20 1.3 VGS = 4.5 V; ID = 4.7 A 1.1 0.9 0 0 1 2 3 4 Qg - Total Gate Charge (nC) Gate Charge S09-0390-Rev. C, 09-Mar-09 5 6 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 69097 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4936CDY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.10 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 100 10 TJ = 150 °C TJ = 25 °C 1 0.08 0.06 TJ = 125 °C 0.04 TJ = 25 °C 0.02 0.00 0.1 0.0 0.3 0.6 0.9 1.2 0 1.5 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.3 20 2.1 16 ID = 250 µA Power (W) VGS(th) (V) 1.9 1.7 12 8 1.5 4 1.3 1.1 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 100 1000 100 I D - Drain Current (A) Limited by RDS(on)* 10 100 µA 1 1 ms 10 ms 0.1 100 ms TA = 25 °C Single Pulse 1s 10 s, DC BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S09-0390-Rev. C, 09-Mar-09 Document Number: 69097 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4936CDY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) I D - Drain Current (A) 8 6 4 2 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating a 3.0 1.5 2.5 1.2 Power (W) Power (W) 2.0 1.5 0.9 0.6 1.0 0.3 0.5 0.0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient 150 Note a. The power dissipation PD is based on TJ max = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S09-0390-Rev. C, 09-Mar-09 Document Number: 69097 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4936CDY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = Single Pulse t1 t2 2. Per Unit Base = RthJA = 110 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot                   Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69097. S09-0390-Rev. C, 09-Mar-09 Document Number: 69097 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2021 1 Document Number: 91000