SI6423ADQ-T1-GE3

Si6423ADQ www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET D S 5 S 6 D 7 8 FEATURES TSSOP-8 Single • TrenchFET® power MOSFET • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Top View 4 3 G 2 S 1 S D S • Load switch • Battery switch G • Power management PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = -4.5 V RDS(on) max. () at VGS = -2.5 V RDS(on) max. () at VGS = -1.8 V Qg typ. (nC) ID (A) d Configuration -20 0.0098 0.0130 0.0227 63 -12.5 Single D P-Channel MOSFET ORDERING INFORMATION Package TSSOP-8 Lead (Pb)-free and halogen-free Si6423ADQ-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS -20 Gate-source voltage VGS ±8 TC = 25 °C Continuous drain current (TJ = 150 °C) a TC = 70 °C -10 ID TA = 25 °C -10.3 a, b -8.2 a, b Pulsed drain current (t = 300 μs) Avalanche current IDM TC = 25 °C -70 L = 0.1 mH -1.3 IAS -20 EAS 20 TC = 25 °C 2.2 TC = 70 °C 1.4 PD TA = 25 °C A -1.9 IS TA = 25 °C Single pulse avalanche energy Maximum power dissipation V -12.5 TA = 70 °C Continuous source-drain diode current UNIT mJ 1.5 a, b W 1.0 a, b TA = 70 °C Operating junction and storage temperature range TJ, Tstg -55 to +150 °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM Maximum junction-to-ambient a, c t  10 s RthJA 65 83 Maximum junction-to-case (drain) Steady state RthJC 46 56 UNIT °C/W Notes a. Surface mounted on 1" x 1" FR4 board b. t = 10 s c. Maximum under steady state conditions is 120 °C/W d. TC = 25 °C S20-0894-Rev. B, 23-Nov-2020 Document Number: 66828 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si6423ADQ www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = -250 μA -20 - - - V -11 - - 2.9 - Static Drain-source breakdown voltage VDS temperature coefficient VDS/TJ VGS(th) temperature coefficient VGS(th)/TJ ID = -250 μA Gate-source threshold voltage mV/°C VGS(th) VDS = VGS, ID = -250 μA -0.4 - -1 V Gate-source leakage IGSS VDS = 0 V, VGS = ± 8 V - - ± 100 nA Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a VDS = -20 V, VGS = 0 V - - -1 VDS = -20 V, VGS = 0 V, TJ = 55 °C - - -10 VDS  -5 V, VGS = -10 V -10 - - VGS = -4.5 V, ID = -10 A - 0.0082 0.0098 VGS = -2.5 V, ID = -8 A - 0.0108 0.0130 VGS = -1.8 V, ID = -5 A - 0.0175 0.0227 VDS = -10 V, ID = -10 A - 70 - - 5875 - VDS = -10 V, VGS= 0 V, f = 1 MHz - 540 - - 555 - - 112 168 - 63 95 VDS = -10 V, VGS = -4.5 V, ID = -16.7 A - 8.7 - - 25.3 - f = 1 MHz 0.8 3.6 7.2 - 12 24 RDS(on) gfs μA A  S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time VDS = -10 V, VGS = -8 V, ID = -16.7 A td(on) VDD = -10 V, RL = 1 , ID  -10 A, VGEN = -8 V, Rg = 1  tr td(off) tf - 4 8 - 120 180 - 36 54 pF nC  ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current a ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C IS = -10 A IF = -10 A, di/dt = 100 A/μs, TJ = 25 °C - - -18 - - -70 - -0.75 -1.2 V - 45 68 ns - 38 57 nC - 18 - - 27 - A ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S20-0894-Rev. B, 23-Nov-2020 Document Number: 66828 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si6423ADQ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted) 70 5 VGS = 5 V thru 2.5 V TC = 25 °C VGS = 2 V 4 ID - Drain Current (A) ID - Drain Current (A) 56 VGS = 1.8 V 42 28 VGS = 1.5 V 14 TC = 125 °C 3 2 1 TC = -55 °C 0 0 0 0.5 1 1.5 0 2 0.5 1.5 2 Transfer Characteristics Output Characteristics 8800 0.023 C - Capacitance (pF) VGS = 1.8 V 0.019 RDS(on) - On-Resistance (Ω) 1 VGS - Gate-to-Source Voltage (V) VDS - Drain- to- Source Voltage (V) 0.015 VGS = 2.5 V 0.011 VGS = 4.5 V 6600 Ciss 4400 2200 0.007 Coss Crss 0.003 0 0 14 28 42 56 70 0 5 ID - Drain Current (A) 15 20 Capacitance On-Resistance vs. Drain Current 10 1.5 ID = 16.7 A VGS = 4.5 V, 10 A; 2.5 V, 8 A VDS = 8 V RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 10 VDS - Drain-to-Source Voltage (V) 8 VDS = 15 V 6 4 VDS = 16 V 2 0 1.3 VGS = 1.8 V, 5 A 1.1 0.9 0.7 0 30 60 90 Qg - Total Gate Charge (nC) Gate Charge S20-0894-Rev. B, 23-Nov-2020 120 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Normalized On-Resistance vs. Junction Temperature Document Number: 66828 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si6423ADQ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted) 100 0.015 R DS(on) - On-Resistance (:) IS - Source Current (A) ID = 10 A TJ = 150 °C 10 TJ = 25 °C 1 0.1 0.0 0.013 TJ = 125 °C 0.010 TJ = 25 °C 0.008 0.005 0.3 0.6 0.9 0 1.2 2 4 6 8 10 V GS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 200 0.80 ID = 250 μA 160 Power (W) VGS(th) (V) 0.65 0.50 120 80 0.35 40 0.2 -50 -25 0 25 50 75 100 125 0 150 0.001 0.01 0.1 TJ - Temperature ( °C) 1 10 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient Axis Title 10000 100 1 ms 10 Limited by RDS(on) a 1000 10 ms 1st line 2nd line 2nd line ID - Drain Current (A) IDM limited 1 100 ms 100 10 s, 1 s 0.1 TA = 25 °C, single pulse 0.01 0.01 DC BVDSS limited 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Safe Operating Area, Junction-to-Ambient Note a. VGS > minimum VGS at which RDS(on) is specified S20-0894-Rev. B, 23-Nov-2020 Document Number: 66828 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si6423ADQ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted) Axis Title 10000 15 1000 9 1st line 2nd line 2nd line ID - Drain Current (A) 12 6 100 3 10 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating a Axis Title Axis Title 2.8 10000 1.25 10000 1.00 100 0.7 1000 0.75 1st line 2nd line 1.4 2nd line P - Power (W) 1000 1st line 2nd line 2nd line P - Power (W) 2.1 0.50 100 0.25 10 0.0 0 25 50 75 100 125 150 10 0.00 0 25 50 75 100 125 TA - Ambient Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S20-0894-Rev. B, 23-Nov-2020 Document Number: 66828 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si6423ADQ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty cycle = 0.5 0.2 Notes: 0.1 P DM 0.1 0.05 t1 t2 1. Duty cycle, D = t1 t2 2. Per unit base = R thJA = 100 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single pulse 4. Surface mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?66828. S20-0894-Rev. B, 23-Nov-2020 Document Number: 66828 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix TSSOP: 8ĆLEAD JEDEC Part Number: MO-153 R 0.10 Corners) e A1 A A2 D 0.25 (Gage Plane) E1 MILLIMETERS E C L B Document Number: 71201 06-Jul-01 R 0.10 (4 Corners) oK1 L1 Dim A A1 A2 B C D E E1 e L L1 Y oK1 Min Nom Max – – 1.20 0.05 0.10 0.15 0.80 1.00 1.05 0.19 0.28 0.30 – 0.127 – 2.90 3.00 3.10 6.20 6.40 6.60 4.30 4.40 4.50 – 0.65 – 0.45 0.60 0.75 0.90 1.00 1.10 – – 0.10 0_ 3_ 6_ ECN: S-03946—Rev. G, 09-Jul-01 DWG: 5844 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR TSSOP-8 0.092 (2.337) 0.026 (4.623) (1.016) 0.182 0.040 (6.655) 0.262 (0.660) 0.014 0.012 (0.356) (0.305) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72611 Revision: 21-Jan-08 www.vishay.com 27 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 09-Jul-2021 1 Document Number: 91000