SI7601DN-T1-GE3

New Product Si7601DN Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 20 FEATURES RDS(on) (Ω) ID (A) 0.019 at VGS = - 4.5 V - 16e 0.031 at VGS = - 2.5 V - 16e Qg (Typ.) • Halogen-free Option Available • TrenchFET® Power MOSFET • Low Thermal Resistance PowerPAK® Package with Small Size and Low 1.07 mm Profile • PWM Optimized • 100 % Rg and UIS Tested 16.2 nC RoHS COMPLIANT APPLICATIONS PowerPAK 1212-8 • DC/DC Buck Converter • High-Side Application for Asynchronous Buck S 3.30 mm S 3.30 mm 1 S 2 S 3 G 4 G D 8 D 7 D 6 D 5 Bottom View D Ordering Information: Si7601DN-T1-E3 (Lead (Pb)-free) Si7601DN-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID IDM Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Avalanche Current Single-Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Limit - 20 ± 12 - 16e - 16e Unit V - 11.5a, b - 9.2a, b - 40 - 16e A - 3.15a, b 15 11.25 52 33 mJ 3.8a, b W 2.4a, b - 50 to 150 260 TJ, Tstg Operating Junction and Storage Temperature Range °C Soldering Recommendations (Peak Temperature)c, d Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 10 s. c. See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Package limited. Document Number: 73778 S-81549-Rev. B, 07-Jul-08 www.vishay.com 1 New Product Si7601DN Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol RthJA RthJC t ≤ 10 s Steady State Maximum Junction-to-Ambienta, b Maximum Junction-to-Case (Drain) Typical 26 1.9 Maximum 33 2.4 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditins is 81 °C/W. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ ID = - 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time td(on) Rise Time tr td(off) Turn-Off Delay Time Fall Time V - 16.8 mV/°C 2.63 - 0.6 - 1.6 V ± 100 nA VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 VDS ≥ - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 11 A - 40 µA A 0.016 0.0192 VGS = - 2.5 V, ID = - 8.9 A 0.025 0.0313 VDS = - 10 V, ID = - 11 A 31.7 Ω S 1870 VDS = - 10 V, VGS = 0 V, f = 1 MHz 490 pF 460 VDS = - 10 V, VGS = - 5 V, ID = - 11 A 18 27 16.2 25 VDS = - 10 V, VGS = - 4.5 V, ID = - 11 A 4.1 f = 1 MHz 6.1 9.2 18 27 112 168 53 80 80 120 nC 4.8 VDD = - 10 V, RL = 1.09 Ω ID ≅ - 9.2 A, VGEN = - 4.5 V, Rg = 1 Ω tf Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage IS TC = 25 °C - 16 ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb - 40 IS = - 6 A IF = - 5 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.8 - 1.2 V 42 63 ns 25.2 38 nC 14 28 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73778 S-81549-Rev. B, 07-Jul-08 New Product Si7601DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 40 15 VGS = 5 V thru 3 V VGS = 2.5 V 12 I D - Drain Current (A) I D - Drain Current (A) 32 24 16 VGS = 2 V 9 6 TC = 125 °C 8 3 TC = 25 °C VGS = 1.5 V 0 0.0 0.6 1.2 1.8 2.4 TC = - 55 °C 0 0.0 3.0 0.5 VDS - Drain-to-Source Voltage (V) 2.0 Transfer Characteristics 0.06 2500 0.05 Ciss 0.04 C - Capacitance (pF) 2000 VGS = 2.5 V 0.03 0.02 1500 1000 Coss VGS = 4.5 V 500 0.01 0.00 Crss 0 0 8 16 24 32 40 0 5 ID - Drain Current (A) 10 15 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 5 1.6 ID = 11 A VGS = 2.5 V, ID = 8.9 A 4 1.4 3 VDS = 16 V 2 1 (Normalized) VDS = 10 V R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 1.5 VGS - Gate-to-Source Voltage (V) Output Characteristics R DS(on) - On-Resistance (Ω) 1.0 1.2 VGS = 4.5 V, ID = 11 A 1.0 0.8 0 0 4 8 12 Qg - Total Gate Charge (nC) Gate Charge Document Number: 73778 S-81549-Rev. B, 07-Jul-08 16 20 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product Si7601DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.05 R DS(on) - Drain-to-Source On-Resistance (Ω) I S - Source Current (A) 30 10 TJ = 150 °C 1 TJ = 25 °C 0.1 0.01 0.04 0.03 TA = 125 °C 0.02 TA = 25 °C 0.01 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 1.4 100 1.2 80 ID = 250 µA 60 Power (W) VGS(th) Variance (V) 0.001 0.0 ID = 11 A 1.0 0.8 40 20 0.6 0.4 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.1 1 10 100 600 Time (s) TJ - Temperature (°C) Single Pulse Power Threshold Voltage 100 Limited by RDS(on)* 1 ms I D - Drain Current (A) 10 10 ms 100 ms 1 1s 10 s DC 0.1 BVDSS Limited 0.01 TA = 25 °C Single Pulse 0.001 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 73778 S-81549-Rev. B, 07-Jul-08 New Product Si7601DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 70 50 60 50 Power (W) I D - Drain Current (A) 40 30 20 40 30 Limited by Package 20 10 10 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power, Junction-to-Case * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73778 S-81549-Rev. B, 07-Jul-08 www.vishay.com 5 New Product Si7601DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 65 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 4. Surface Mounted 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73778. www.vishay.com 6 Document Number: 73778 S-81549-Rev. 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